IXFK88N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bulk

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

MSL :

-

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

88A Tc

Lead Free :

Lead Free

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

600W (Tc)

Base Product Number :

IXFK88

Threshold Voltage :

5V

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

40m Ω @ 44A, 10V

Package / Case :

TO-264-3, TO-264AA

RoHS :

Details

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Mount :

Through Hole

Length :

19.96 mm

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Series :

HiPerFET™, PolarP2™

FET Feature :

--

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

40mOhm

Pin Count :

3

Power Dissipation-Max (Abs) :

600 W

JEDEC-95 Code :

TO-264AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Fall Time (Typ) :

25 ns

Continuous Drain Current Id :

88A

Product Category :

MOSFET

Qualification :

-

REACH SVHC :

No SVHC

Channel Type :

N Channel

Mounting Style :

Through Hole

Terminal Position :

Single

Supplier Device Package :

TO-264AA (IXFK)

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 4mA

Product Type :

MOSFET

Packaging :

Bulk

DS Breakdown Voltage-Min :

300 V

Power Dissipation :

600W

Rise Time :

24ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

300V

Type :

Polar HiPerFET Power MOSFET

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

2000 mJ

Pbfree Code :

yes

Height :

26.16 mm

Tradename :

HiPerFET

Width :

5.13 mm

Factory Lead Time :

30 Weeks

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

600W Tc

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

3

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

300V

Mounting Type :

Through Hole

Number of Terminals :

3

Turn-Off Delay Time :

96 ns

Published :

2009

Drain-source On Resistance-Max :

0.04 Ω

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

220A

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

88 A

Product Status :

Active

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

88A

Transistor Application :

SWITCHING