IXFK88N30P
- Mfr.Part #
- IXFK88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO264AA
- Stock
- 74
- In Stock :
- 74
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Product Status :
- Active
- Height :
- 26.16 mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Packaging :
- Bulk
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 96 ns
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Type :
- Polar HiPerFET Power MOSFET
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Rise Time :
- 24ns
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™, PolarP2™
- Continuous Drain Current (ID) :
- 88A
- Surface Mount :
- No
- Channel Type :
- N Channel
- Supplier Device Package :
- TO-264AA (IXFK)
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Bulk
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 220A
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 600 W
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2009
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Power Dissipation (Max) :
- 600W (Tc)
- MSL :
- -
- Number of Pins :
- 3
- Continuous Drain Current Id :
- 88A
- Factory Lead Time :
- 30 Weeks
- Resistance :
- 40mOhm
- Number of Elements :
- 1
- Base Product Number :
- IXFK88
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 88 A
- ECCN Code :
- EAR99
- Qualification :
- -
- Power Dissipation :
- 600W
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- JEDEC-95 Code :
- TO-264AA
- Width :
- 5.13 mm
- Drain to Source Voltage (Vdss) :
- 300V
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Single
- RoHS :
- Details
- Fall Time (Typ) :
- 25 ns
- Threshold Voltage :
- 5V
- Drain-source On Resistance-Max :
- 0.04 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 300 V
- Length :
- 19.96 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Power Dissipation-Max :
- 600W Tc
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Datasheets
- IXFK88N30P

N-Channel Bulk 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-264-3, TO-264AA
IXFK88N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 88A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 88 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 96 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 220A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK88N30P Applications
There are a lot of IXYS
IXFK88N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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