IXFK88N30P

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Mfr.Part #
IXFK88N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO264AA
Stock
74
In Stock :
74

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Rise Time :
24ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification :
-
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
2000 mJ
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Product Category :
MOSFET
Power Dissipation :
600W
Pulsed Drain Current-Max (IDM) :
220A
Pbfree Code :
yes
Turn-Off Delay Time :
96 ns
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Pins :
3
Packaging :
Bulk
Power Dissipation-Max (Abs) :
600 W
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
Number of Terminations :
3
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
300V
Series :
HiPerFET™, PolarP2™
Mounting Style :
Through Hole
Tradename :
HiPerFET
Continuous Drain Current Id :
88A
Fall Time (Typ) :
25 ns
Drain Current-Max (Abs) (ID) :
88 A
Configuration :
Single
Width :
5.13 mm
RoHS :
Details
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
88A
Brand :
IXYS
REACH SVHC :
No SVHC
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFK88
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Threshold Voltage :
5V
Mount :
Through Hole
Factory Lead Time :
30 Weeks
Published :
2009
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
300 V
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Terminal Position :
Single
ECCN Code :
EAR99
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Length :
19.96 mm
Type :
Polar HiPerFET Power MOSFET
JESD-609 Code :
e1
Supplier Device Package :
TO-264AA (IXFK)
Resistance :
40mOhm
Drain to Source Voltage (Vdss) :
300V
Package :
Bulk
Power Dissipation (Max) :
600W (Tc)
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max :
600W Tc
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.04 Ω
Reach Compliance Code :
Compliant
Channel Type :
N Channel
JEDEC-95 Code :
TO-264AA
MSL :
-
Mounting Type :
Through Hole
Height :
26.16 mm
Pin Count :
3
Package / Case :
TO-264-3, TO-264AA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Qualification Status :
Not Qualified
Datasheets
IXFK88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK88N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:Polar HiPerFET Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, IXFK88N30P pinout, IXFK88N30P datasheet PDF, IXFK88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK88N30P


N-Channel Bulk 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-264-3, TO-264AA

IXFK88N30P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 88A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 88 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 96 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 220A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFK88N30P Applications


There are a lot of IXYS
IXFK88N30P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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