IXFK88N30P
- Mfr.Part #
- IXFK88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO264AA
- Stock
- 74
- In Stock :
- 74
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 24ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification :
- -
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Power Dissipation :
- 600W
- Pulsed Drain Current-Max (IDM) :
- 220A
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 96 ns
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Number of Pins :
- 3
- Packaging :
- Bulk
- Power Dissipation-Max (Abs) :
- 600 W
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 300V
- Series :
- HiPerFET™, PolarP2™
- Mounting Style :
- Through Hole
- Tradename :
- HiPerFET
- Continuous Drain Current Id :
- 88A
- Fall Time (Typ) :
- 25 ns
- Drain Current-Max (Abs) (ID) :
- 88 A
- Configuration :
- Single
- Width :
- 5.13 mm
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 88A
- Brand :
- IXYS
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFK88
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Threshold Voltage :
- 5V
- Mount :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- Published :
- 2009
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 300 V
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Length :
- 19.96 mm
- Type :
- Polar HiPerFET Power MOSFET
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-264AA (IXFK)
- Resistance :
- 40mOhm
- Drain to Source Voltage (Vdss) :
- 300V
- Package :
- Bulk
- Power Dissipation (Max) :
- 600W (Tc)
- Product Type :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 600W Tc
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.04 Ω
- Reach Compliance Code :
- Compliant
- Channel Type :
- N Channel
- JEDEC-95 Code :
- TO-264AA
- MSL :
- -
- Mounting Type :
- Through Hole
- Height :
- 26.16 mm
- Pin Count :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Datasheets
- IXFK88N30P

N-Channel Bulk 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-264-3, TO-264AA
IXFK88N30P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 88A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 88 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 96 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 220A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFK88N30P Applications
There are a lot of IXYS
IXFK88N30P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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