IXFK80N60P3
- Mfr.Part #
- IXFK80N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 80A TO264AA
- Stock
- 1,824
- In Stock :
- 1,824
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Radiation Hardening :
- No
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 87 ns
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Product Status :
- Active
- Length :
- 19.96mm
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 30 Weeks
- Number of Channels :
- 1
- Base Product Number :
- IXFK80
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Height :
- 26.16mm
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 48 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.07Ohm
- Fall Time (Typ) :
- 8 ns
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-264AA (IXFK)
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Channel Type :
- N Channel
- Power Dissipation (Max) :
- 1300W (Tc)
- Threshold Voltage :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current Id :
- 80A
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 500mA, 10V
- ECCN Code :
- EAR99
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation-Max :
- 1300W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Vgs (Max) :
- ±30V
- Series :
- HiPerFET™, Polar3™
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 80A
- Product Category :
- MOSFET
- Number of Elements :
- 1
- MSL :
- -
- Pin Count :
- 3
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Rise Time :
- 25ns
- Power Dissipation :
- 1.3kW
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2011
- Packaging :
- Tube
- Width :
- 5.13mm
- Reach Compliance Code :
- Unknown
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 200A
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Configuration :
- Single
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Datasheets
- IXFK80N60P3

N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V TO-264-3, TO-264AA
IXFK80N60P3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 87 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 48 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK80N60P3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFK80N60P3 Applications
There are a lot of IXYS
IXFK80N60P3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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