IXFK80N60P3
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- Mfr.Part #
- IXFK80N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 80A TO264AA
- Stock
- 1,824
- In Stock ：
- 1,824
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Length :
- 19.96mm
- Published :
- 2011
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Rise Time :
- 25ns
- Drain to Source Voltage (Vdss) :
- 600V
- Base Product Number :
- IXFK80
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Mounting Style :
- Through Hole
- Width :
- 5.13mm
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 80A
- Drain to Source Breakdown Voltage :
- 600V
- Brand :
- IXYS
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Case Connection :
- DRAIN
- Height :
- 26.16mm
- Power Dissipation (Max) :
- 1300W (Tc)
- Factory Lead Time :
- 30 Weeks
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Supplier Device Package :
- TO-264AA (IXFK)
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 500mA, 10V
- Turn On Delay Time :
- 48 ns
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Number of Channels :
- 1
- Configuration :
- Single
- Qualification :
- -
- Drain-source On Resistance-Max :
- 0.07Ohm
- Series :
- HiPerFET™, Polar3™
- Power Dissipation :
- 1.3kW
- Transistor Type :
- 1 N-Channel
- ECCN Code :
- EAR99
- Continuous Drain Current Id :
- 80A
- Pin Count :
- 3
- Power Dissipation-Max :
- 1300W Tc
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Package :
- Tube
- Threshold Voltage :
- 5V
- Element Configuration :
- Single
- Tradename :
- HiPerFET
- Channel Type :
- N Channel
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Reach Compliance Code :
- Unknown
- MSL :
- -
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 87 ns
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-264-3, TO-264AA
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXFK80N60P3
N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V TO-264-3, TO-264AA
IXFK80N60P3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 87 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 48 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK80N60P3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFK80N60P3 Applications
There are a lot of IXYS
IXFK80N60P3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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