IXFK80N60P3

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Mfr.Part #
IXFK80N60P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 80A TO264AA
Stock
1,824
In Stock :
1,824

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Length :
19.96mm
Published :
2011
Vgs(th) (Max) @ Id :
5V @ 8mA
Rise Time :
25ns
Drain to Source Voltage (Vdss) :
600V
Base Product Number :
IXFK80
Vgs (Max) :
±30V
Number of Pins :
3
Transistor Application :
SWITCHING
Mounting Style :
Through Hole
Width :
5.13mm
Product Type :
MOSFET
Continuous Drain Current (ID) :
80A
Drain to Source Breakdown Voltage :
600V
Brand :
IXYS
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Case Connection :
DRAIN
Height :
26.16mm
Power Dissipation (Max) :
1300W (Tc)
Factory Lead Time :
30 Weeks
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Manufacturer :
IXYS
Number of Elements :
1
Supplier Device Package :
TO-264AA (IXFK)
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Pulsed Drain Current-Max (IDM) :
200A
FET Type :
N-Channel
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
FET Feature :
--
Rds On (Max) @ Id, Vgs :
70m Ω @ 500mA, 10V
Turn On Delay Time :
48 ns
Minimum Operating Temperature :
- 55 C
Mount :
Through Hole
Number of Channels :
1
Configuration :
Single
Qualification :
-
Drain-source On Resistance-Max :
0.07Ohm
Series :
HiPerFET™, Polar3™
Power Dissipation :
1.3kW
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Continuous Drain Current Id :
80A
Pin Count :
3
Power Dissipation-Max :
1300W Tc
Transistor Element Material :
SILICON
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
2000 mJ
Package :
Tube
Threshold Voltage :
5V
Element Configuration :
Single
Tradename :
HiPerFET
Channel Type :
N Channel
Mounting Type :
Through Hole
Product Status :
Active
Reach Compliance Code :
Unknown
MSL :
-
Channel Mode :
Enhancement
Number of Terminations :
3
Turn-Off Delay Time :
87 ns
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-264-3, TO-264AA
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
8 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Datasheets
IXFK80N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFK80N60P3 pinout, IXFK80N60P3 datasheet PDF, IXFK80N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N60P3


N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V TO-264-3, TO-264AA

IXFK80N60P3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 87 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 48 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK80N60P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFK80N60P3 Applications


There are a lot of IXYS
IXFK80N60P3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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