IXFK80N60P3

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Mfr.Part #
IXFK80N60P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 80A TO264AA
Stock
1,824
In Stock :
1,824

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFK80
Continuous Drain Current Id :
80A
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Continuous Drain Current (ID) :
80A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.07Ohm
Number of Pins :
3
Supplier Device Package :
TO-264AA (IXFK)
Mounting Style :
Through Hole
Channel Mode :
Enhancement
RoHS :
Details
ECCN Code :
EAR99
Channel Type :
N Channel
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
600V
Number of Elements :
1
Published :
2011
Height :
26.16mm
Pulsed Drain Current-Max (IDM) :
200A
Minimum Operating Temperature :
- 55 C
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Factory Lead Time :
30 Weeks
Product Status :
Active
Mount :
Through Hole
Power Dissipation :
1.3kW
Rds On (Max) @ Id, Vgs :
70m Ω @ 500mA, 10V
Number of Terminations :
3
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Width :
5.13mm
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Qualification :
-
Brand :
IXYS
FET Feature :
--
Length :
19.96mm
Vgs (Max) :
±30V
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
2000 mJ
Turn On Delay Time :
48 ns
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
87 ns
Configuration :
Single
FET Type :
N-Channel
Tradename :
HiPerFET
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Vgs(th) (Max) @ Id :
5V @ 8mA
Element Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
MSL :
-
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
30V
Product Category :
MOSFET
Series :
HiPerFET™, Polar3™
Drain to Source Breakdown Voltage :
600V
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
1300W Tc
Fall Time (Typ) :
8 ns
Lead Free :
Lead Free
Manufacturer :
IXYS
Threshold Voltage :
5V
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
1300W (Tc)
Package :
Tube
Transistor Application :
SWITCHING
Rise Time :
25ns
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFK80N60P3 pinout, IXFK80N60P3 datasheet PDF, IXFK80N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N60P3


N-Channel Tube 70m Ω @ 500mA, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V TO-264-3, TO-264AA

IXFK80N60P3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 87 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 48 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK80N60P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFK80N60P3 Applications


There are a lot of IXYS
IXFK80N60P3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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