IXFK80N50Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

MSL :

MSL 1 - Unlimited

Power Dissipation (Max) :

1250W (Tc)

Power Dissipation-Max :

1250W Tc

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

1250 W

Series :

HiPerFET™

Mounting Style :

Through Hole

Reach Compliance Code :

Unknown

RoHS :

Details

Number of Pins :

3

Pin Count :

3

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Supplier Device Package :

TO-264AA (IXFK)

Channel Type :

N Channel

DS Breakdown Voltage-Min :

500 V

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

240A

Published :

2011

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

FET Feature :

--

Number of Terminals :

3

Rise Time :

250ns

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Transistor Type :

1 N-Channel

Drain Current-Max (Abs) (ID) :

80 A

Number of Terminations :

3

Base Product Number :

IXFK80

Manufacturer :

IXYS

Channel Mode :

Enhancement

Surface Mount :

No

Configuration :

Single

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

1.25kW

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-264-3, TO-264AA

Product Status :

Active

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

65m Ω @ 40A, 10V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.065Ohm

Tradename :

HiPerFET

Continuous Drain Current Id :

80A

Factory Lead Time :

30 Weeks

Length :

19.96mm

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Qualification Status :

Not Qualified

Width :

5.13mm

Number of Channels :

1 Channel

Packaging :

Tube

Continuous Drain Current (ID) :

80A

Transistor Element Material :

SILICON

Height :

26.16mm

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

30 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Qualification :

-

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Turn-Off Delay Time :

43 ns

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-264AA