IXFK80N50Q3

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Mfr.Part #
IXFK80N50Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 80A TO264AA
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
1250 W
Vgs (Max) :
±30V
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
80A
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-264-3, TO-264AA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
Turn-Off Delay Time :
43 ns
Packaging :
Tube
Length :
19.96mm
Manufacturer :
IXYS
Power Dissipation (Max) :
1250W (Tc)
Pulsed Drain Current-Max (IDM) :
240A
Product Category :
MOSFET
Rise Time :
250ns
Power Dissipation-Max :
1250W Tc
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
30V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1.25kW
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
500 V
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Terminal Position :
Single
Factory Lead Time :
30 Weeks
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Number of Elements :
1
JEDEC-95 Code :
TO-264AA
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Series :
HiPerFET™
Transistor Application :
SWITCHING
Number of Pins :
3
Continuous Drain Current Id :
80A
Published :
2011
Width :
5.13mm
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
80 A
Element Configuration :
Single
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Unknown
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXFK80
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Tradename :
HiPerFET
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Turn On Delay Time :
30 ns
Drain to Source Voltage (Vdss) :
500V
RoHS :
Details
Transistor Element Material :
SILICON
FET Feature :
--
Drain-source On Resistance-Max :
0.065Ohm
Package Shape :
RECTANGULAR
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-264AA (IXFK)
Drain to Source Breakdown Voltage :
500V
Number of Terminals :
3
Transistor Type :
1 N-Channel
Qualification :
-
Height :
26.16mm
Configuration :
Single
Number of Terminations :
3
Mount :
Through Hole
Channel Type :
N Channel
Mounting Style :
Through Hole
MSL :
MSL 1 - Unlimited
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Product Status :
Active
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
65m Ω @ 40A, 10V
FET Type :
N-Channel
Brand :
IXYS
Product Type :
MOSFET
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Datasheets
IXFK80N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXFK80N50Q3 pinout, IXFK80N50Q3 datasheet PDF, IXFK80N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N50Q3


N-Channel Tube 65m Ω @ 40A, 10V ±30V 10000pF @ 25V 200nC @ 10V 500V TO-264-3, TO-264AA

IXFK80N50Q3 Overview


A device's maximal input capacitance is 10000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK80N50Q3 Features


a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a 500V drain to source voltage (Vdss)


IXFK80N50Q3 Applications


There are a lot of IXYS
IXFK80N50Q3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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