IXFK80N50Q3
- Mfr.Part #
- IXFK80N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 80A TO264AA
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 1250 W
- Vgs (Max) :
- ±30V
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 80A
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-264-3, TO-264AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Turn-Off Delay Time :
- 43 ns
- Packaging :
- Tube
- Length :
- 19.96mm
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 1250W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 240A
- Product Category :
- MOSFET
- Rise Time :
- 250ns
- Power Dissipation-Max :
- 1250W Tc
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.25kW
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 500 V
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Factory Lead Time :
- 30 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-264AA
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Series :
- HiPerFET™
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Continuous Drain Current Id :
- 80A
- Published :
- 2011
- Width :
- 5.13mm
- Terminal Form :
- THROUGH-HOLE
- Drain Current-Max (Abs) (ID) :
- 80 A
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXFK80
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Tradename :
- HiPerFET
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Turn On Delay Time :
- 30 ns
- Drain to Source Voltage (Vdss) :
- 500V
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.065Ohm
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Qualification :
- -
- Height :
- 26.16mm
- Configuration :
- Single
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Channel Type :
- N Channel
- Mounting Style :
- Through Hole
- MSL :
- MSL 1 - Unlimited
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Product Status :
- Active
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 40A, 10V
- FET Type :
- N-Channel
- Brand :
- IXYS
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Datasheets
- IXFK80N50Q3

N-Channel Tube 65m Ω @ 40A, 10V ±30V 10000pF @ 25V 200nC @ 10V 500V TO-264-3, TO-264AA
IXFK80N50Q3 Overview
A device's maximal input capacitance is 10000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK80N50Q3 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 240A.
a 500V drain to source voltage (Vdss)
IXFK80N50Q3 Applications
There are a lot of IXYS
IXFK80N50Q3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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