IXFK80N50P
- Mfr.Part #
- IXFK80N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 80A TO264AA
- Stock
- 2,473
- In Stock :
- 2,473
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Transistor Type :
- 1 N-Channel
- Current Rating :
- 80A
- Package / Case :
- TO-264-3, TO-264AA
- Lead Free :
- Lead Free
- Factory Lead Time :
- 30 Weeks
- Surface Mount :
- No
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 80A
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Manuf. code :
- IXY
- Turn-Off Delay Time :
- 70 ns
- Power Dissipation :
- 1.04kW
- Number of Terminals :
- 3
- Product Type :
- MOSFET
- RoHS :
- Details
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 1040W (Tc)
- FET Feature :
- --
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 40A, 10V
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-264AA (IXFK)
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Voltage - Rated DC :
- 500V
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±30V
- Length :
- 19.96 mm
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 1040W Tc
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Height :
- 26.16 mm
- DS Breakdown Voltage-Min :
- 500 V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Base Product Number :
- IXFK80
- Max. operating temperature :
- +150°C
- Drain to Source Voltage (Vdss) :
- 500V
- Tradename :
- HiPerFET
- JEDEC-95 Code :
- TO-264AA
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- HiPerFET™, PolarHT™
- Power (max) P(TOT) :
- 1040W
- Subcategory :
- MOSFETs
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Enclosure :
- TO 264
- Packaging :
- Tube
- Resistance :
- 65mOhm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Rise Time :
- 27ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1 Channel
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 12700pF @ 25V
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.065 Ω
- Fall Time (Typ) :
- 16 ns
- Channels :
- 1
- Minimum Operating Temperature :
- - 55 C
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 5.13 mm
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Content :
- 1pc(s)
- Datasheets
- IXFK80N50P

N-Channel Tube 65m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V 500V TO-264-3, TO-264AA
IXFK80N50P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 12700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK80N50P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFK80N50P Applications
There are a lot of IXYS
IXFK80N50P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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