IXFK80N50P

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Mfr.Part #
IXFK80N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 80A TO264AA
Stock
2,473
In Stock :
2,473

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Transistor Type :
1 N-Channel
Current Rating :
80A
Package / Case :
TO-264-3, TO-264AA
Lead Free :
Lead Free
Factory Lead Time :
30 Weeks
Surface Mount :
No
Channel Mode :
Enhancement
Continuous Drain Current (ID) :
80A
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Manuf. code :
IXY
Turn-Off Delay Time :
70 ns
Power Dissipation :
1.04kW
Number of Terminals :
3
Product Type :
MOSFET
RoHS :
Details
Configuration :
Single
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Power Dissipation (Max) :
1040W (Tc)
FET Feature :
--
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
65m Ω @ 40A, 10V
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-264AA (IXFK)
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Voltage - Rated DC :
500V
JESD-609 Code :
e1
Vgs (Max) :
±30V
Length :
19.96 mm
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
1040W Tc
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
3500 mJ
Height :
26.16 mm
DS Breakdown Voltage-Min :
500 V
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Base Product Number :
IXFK80
Max. operating temperature :
+150°C
Drain to Source Voltage (Vdss) :
500V
Tradename :
HiPerFET
JEDEC-95 Code :
TO-264AA
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
HiPerFET™, PolarHT™
Power (max) P(TOT) :
1040W
Subcategory :
MOSFETs
Vgs(th) (Max) @ Id :
5V @ 8mA
Enclosure :
TO 264
Packaging :
Tube
Resistance :
65mOhm
RoHS Status :
ROHS3 Compliant
Published :
2006
Transistor Element Material :
SILICON
Element Configuration :
Single
Rise Time :
27ns
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1 Channel
Mount :
Through Hole
Drain to Source Breakdown Voltage :
500V
Terminal Position :
Single
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
12700pF @ 25V
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Pulsed Drain Current-Max (IDM) :
200A
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.065 Ω
Fall Time (Typ) :
16 ns
Channels :
1
Minimum Operating Temperature :
- 55 C
Gate to Source Voltage (Vgs) :
30V
Width :
5.13 mm
Manufacturer :
IXYS
Case Connection :
DRAIN
Type :
N-Channel
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Content :
1pc(s)
Datasheets
IXFK80N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Type:N-Channel, IXFK80N50P pinout, IXFK80N50P datasheet PDF, IXFK80N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N50P


N-Channel Tube 65m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V 500V TO-264-3, TO-264AA

IXFK80N50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 12700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK80N50P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFK80N50P Applications


There are a lot of IXYS
IXFK80N50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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