IXFK80N50P

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Mfr.Part #
IXFK80N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 80A TO264AA
Stock
2,473
In Stock :
2,473

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Mount :
Through Hole
Enclosure :
TO 264
Packaging :
Tube
Transistor Element Material :
SILICON
Radiation Hardening :
No
FET Feature :
--
Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
Number of Terminals :
3
Width :
5.13 mm
Max. operating temperature :
+150°C
Turn-Off Delay Time :
70 ns
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
30 Weeks
Series :
HiPerFET™, PolarHT™
Input Capacitance (Ciss) (Max) @ Vds :
12700pF @ 25V
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Number of Pins :
3
Manufacturer :
IXYS
JEDEC-95 Code :
TO-264AA
Vgs (Max) :
±30V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.065 Ω
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
3500 mJ
Channel Mode :
Enhancement
Power Dissipation (Max) :
1040W (Tc)
Package :
Tube
RoHS :
Details
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Pbfree Code :
yes
Rise Time :
27ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Mounting Style :
Through Hole
Tradename :
HiPerFET
Voltage - Rated DC :
500V
Resistance :
65mOhm
Continuous Drain Current (ID) :
80A
Length :
19.96 mm
Power Dissipation-Max :
1040W Tc
Element Configuration :
Single
Package Shape :
RECTANGULAR
Manuf. code :
IXY
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Current Rating :
80A
Subcategory :
MOSFETs
JESD-609 Code :
e1
Power Dissipation :
1.04kW
Terminal Position :
Single
Product Status :
Active
DS Breakdown Voltage-Min :
500 V
Supplier Device Package :
TO-264AA (IXFK)
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Channels :
1
Fall Time (Typ) :
16 ns
Type :
N-Channel
Base Product Number :
IXFK80
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
THROUGH-HOLE
Content :
1pc(s)
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Vgs(th) (Max) @ Id :
5V @ 8mA
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
65m Ω @ 40A, 10V
Brand :
IXYS
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Lead Free :
Lead Free
Power (max) P(TOT) :
1040W
Drain to Source Voltage (Vdss) :
500V
Case Connection :
DRAIN
Height :
26.16 mm
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
200A
Additional Feature :
AVALANCHE RATED
Product Type :
MOSFET
Datasheets
IXFK80N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Type:N-Channel, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, IXFK80N50P pinout, IXFK80N50P datasheet PDF, IXFK80N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N50P


N-Channel Tube 65m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V 500V TO-264-3, TO-264AA

IXFK80N50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 12700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK80N50P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFK80N50P Applications


There are a lot of IXYS
IXFK80N50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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