IXFK80N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power (max) P(TOT) :

1040W

Supplier Device Package :

TO-264AA (IXFK)

Enclosure :

TO 264

Length :

19.96 mm

Factory Lead Time :

30 Weeks

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Rise Time :

27ns

Drain-source On Resistance-Max :

0.065 Ω

Packaging :

Tube

Turn-Off Delay Time :

70 ns

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Series :

HiPerFET™, PolarHT™

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Current Rating :

80A

Content :

1pc(s)

Published :

2006

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Base Product Number :

IXFK80

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Width :

5.13 mm

Subcategory :

MOSFETs

Package Shape :

RECTANGULAR

FET Feature :

--

Case Connection :

DRAIN

JEDEC-95 Code :

TO-264AA

Terminal Position :

Single

Channel Mode :

Enhancement

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

12700pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 8mA

DS Breakdown Voltage-Min :

500 V

Mounting Style :

Through Hole

Manuf. code :

IXY

Number of Channels :

1 Channel

Power Dissipation :

1.04kW

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

65m Ω @ 40A, 10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Package :

Tube

Transistor Application :

SWITCHING

Resistance :

65mOhm

Avalanche Energy Rating (Eas) :

3500 mJ

Surface Mount :

No

Lead Free :

Lead Free

Transistor Type :

1 N-Channel

Height :

26.16 mm

Reach Compliance Code :

Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Type :

MOSFET

Max. operating temperature :

+150°C

Tradename :

HiPerFET

Power Dissipation-Max :

1040W Tc

Channels :

1

Element Configuration :

Single

Voltage - Rated DC :

500V

Fall Time (Typ) :

16 ns

Product Category :

MOSFET

Power Dissipation (Max) :

1040W (Tc)

Number of Pins :

3

RoHS :

Details

JESD-609 Code :

e1

Package / Case :

TO-264-3, TO-264AA

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

500V

Type :

N-Channel