IXFK80N20Q
- Mfr.Part #
- IXFK80N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO264AA
- Stock
- 26,290
- In Stock :
- 26,290
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 360W Tc
- Power Dissipation (Max) :
- 360W (Tc)
- Turn-Off Delay Time :
- 75 ns
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Number of Pins :
- 3
- Published :
- 2000
- JEDEC-95 Code :
- TO-264
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.028Ohm
- Number of Elements :
- 1
- Number of Terminals :
- 3
- Manufacturer :
- IXYS Corporation
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation-Max (Abs) :
- 360 W
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 80 A
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- Base Product Number :
- IXFK80
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 200V
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 360W
- Series :
- HiPerFET™
- ECCN Code :
- EAR99
- Product Status :
- Obsolete
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-264AA (IXFK)
- Rise Time :
- 50ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 200 V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Continuous Drain Current (ID) :
- 80A
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFK80N20Q

N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-264-3, TO-264AA
IXFK80N20Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK80N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)
IXFK80N20Q Applications
There are a lot of IXYS
IXFK80N20Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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