IXFK80N20Q

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Mfr.Part #
IXFK80N20Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO264AA
Stock
26,290
In Stock :
26,290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
360W Tc
Power Dissipation (Max) :
360W (Tc)
Turn-Off Delay Time :
75 ns
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Mount :
Through Hole
Number of Pins :
3
Published :
2000
JEDEC-95 Code :
TO-264
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.028Ohm
Number of Elements :
1
Number of Terminals :
3
Manufacturer :
IXYS Corporation
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Package / Case :
TO-264-3, TO-264AA
Power Dissipation-Max (Abs) :
360 W
RoHS Status :
RoHS Compliant
Pin Count :
3
Drain Current-Max (Abs) (ID) :
80 A
Fall Time (Typ) :
20 ns
Mounting Type :
Through Hole
Base Product Number :
IXFK80
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
200V
Polarity/Channel Type :
N-Channel
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
320 A
Transistor Element Material :
SILICON
Power Dissipation :
360W
Series :
HiPerFET™
ECCN Code :
EAR99
Product Status :
Obsolete
Vgs(th) (Max) @ Id :
4V @ 4mA
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Surface Mount :
No
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-264AA (IXFK)
Rise Time :
50ns
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
200 V
Rds On (Max) @ Id, Vgs :
28m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Avalanche Energy Rating (Eas) :
1500 mJ
Continuous Drain Current (ID) :
80A
Packaging :
Tube
Qualification Status :
Not Qualified
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
200V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXFK80N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFK80N20Q pinout, IXFK80N20Q datasheet PDF, IXFK80N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N20Q


N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-264-3, TO-264AA

IXFK80N20Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK80N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)


IXFK80N20Q Applications


There are a lot of IXYS
IXFK80N20Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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