IXFK80N20Q

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Mfr.Part #
IXFK80N20Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO264AA
Stock
26,290
In Stock :
26,290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
320 A
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Power Dissipation :
360W
Packaging :
Tube
Transistor Element Material :
SILICON
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2000
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Power Dissipation (Max) :
360W (Tc)
Turn-Off Delay Time :
75 ns
Base Product Number :
IXFK80
ECCN Code :
EAR99
Number of Elements :
1
Vgs(th) (Max) @ Id :
4V @ 4mA
Drain-source On Resistance-Max :
0.028Ohm
Number of Pins :
3
Supplier Device Package :
TO-264AA (IXFK)
Manufacturer :
IXYS Corporation
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
200V
Drain to Source Breakdown Voltage :
200V
Package / Case :
TO-264-3, TO-264AA
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
80 A
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
20 ns
Continuous Drain Current (ID) :
80A
JEDEC-95 Code :
TO-264
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
1500 mJ
DS Breakdown Voltage-Min :
200 V
Gate to Source Voltage (Vgs) :
20V
Rise Time :
50ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
360W Tc
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
360 W
Vgs (Max) :
±20V
JESD-30 Code :
R-PSFM-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Package :
Tube
Polarity/Channel Type :
N-Channel
Pin Count :
3
Element Configuration :
Single
Number of Terminations :
3
Package Shape :
RECTANGULAR
Rds On (Max) @ Id, Vgs :
28m Ω @ 500mA, 10V
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Product Status :
Obsolete
FET Feature :
--
Series :
HiPerFET™
RoHS Status :
RoHS Compliant
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXFK80N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, IXFK80N20Q pinout, IXFK80N20Q datasheet PDF, IXFK80N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N20Q


N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-264-3, TO-264AA

IXFK80N20Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK80N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)


IXFK80N20Q Applications


There are a lot of IXYS
IXFK80N20Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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