IXFK80N20Q
- Mfr.Part #
- IXFK80N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO264AA
- Stock
- 26,290
- In Stock :
- 26,290
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Power Dissipation :
- 360W
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2000
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Power Dissipation (Max) :
- 360W (Tc)
- Turn-Off Delay Time :
- 75 ns
- Base Product Number :
- IXFK80
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drain-source On Resistance-Max :
- 0.028Ohm
- Number of Pins :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- Manufacturer :
- IXYS Corporation
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 200V
- Drain to Source Breakdown Voltage :
- 200V
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 80 A
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 20 ns
- Continuous Drain Current (ID) :
- 80A
- JEDEC-95 Code :
- TO-264
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- DS Breakdown Voltage-Min :
- 200 V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 50ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 360W Tc
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 360 W
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 500mA, 10V
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Product Status :
- Obsolete
- FET Feature :
- --
- Series :
- HiPerFET™
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFK80N20Q

N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-264-3, TO-264AA
IXFK80N20Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK80N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)
IXFK80N20Q Applications
There are a lot of IXYS
IXFK80N20Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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