IXFK80N20Q

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Mfr.Part #
IXFK80N20Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO264AA
Stock
26,290
In Stock :
26,290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Turn-Off Delay Time :
75 ns
Series :
HiPerFET™
Supplier Device Package :
TO-264AA (IXFK)
Mount :
Through Hole
Continuous Drain Current (ID) :
80A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
360W
Avalanche Energy Rating (Eas) :
1500 mJ
Fall Time (Typ) :
20 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
80 A
Power Dissipation-Max :
360W Tc
Drain to Source Voltage (Vdss) :
200V
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
Power Dissipation (Max) :
360W (Tc)
DS Breakdown Voltage-Min :
200 V
Package / Case :
TO-264-3, TO-264AA
Packaging :
Tube
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.028Ohm
Product Status :
Obsolete
Rise Time :
50ns
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Power Dissipation-Max (Abs) :
360 W
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFK80
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS Corporation
Transistor Application :
SWITCHING
Package :
Tube
Rds On (Max) @ Id, Vgs :
28m Ω @ 500mA, 10V
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
320 A
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-264
Pin Count :
3
Surface Mount :
No
Case Connection :
DRAIN
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Published :
2000
Number of Elements :
1
Drain to Source Breakdown Voltage :
200V
Datasheets
IXFK80N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IXFK80N20Q pinout, IXFK80N20Q datasheet PDF, IXFK80N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N20Q


N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-264-3, TO-264AA

IXFK80N20Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK80N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)


IXFK80N20Q Applications


There are a lot of IXYS
IXFK80N20Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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