IXFK80N20

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Mfr.Part #
IXFK80N20
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO264AA
Stock
2,432
In Stock :
2,432

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFK80
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
Package :
Tube
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
ECCN Code :
EAR99
Product Status :
Obsolete
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
416 W
Power Dissipation :
360W
Gate Charge (Qg) (Max) @ Vgs :
280nC @ 10V
Supplier Device Package :
TO-264AA (IXFK)
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Series :
HiPerFET™
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Turn-Off Delay Time :
120 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Power Dissipation (Max) :
360W (Tc)
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Input Capacitance (Ciss) (Max) @ Vds :
5900pF @ 25V
Power Dissipation-Max :
360W Tc
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
80A
Manufacturer :
IXYS Corporation
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
200V
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
30m Ω @ 500mA, 10V
Number of Elements :
1
Number of Terminations :
3
Drain-source On Resistance-Max :
0.03 Ω
FET Type :
N-Channel
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
320 A
Resistance :
35mOhm
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
JEDEC-95 Code :
TO-264
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
4V @ 4mA
Current - Continuous Drain (Id) @ 25°C :
80A Tc
DS Breakdown Voltage-Min :
200 V
Package / Case :
TO-264-3, TO-264AA
Drain Current-Max (Abs) (ID) :
80 A
Element Configuration :
Single
Pbfree Code :
yes
Published :
2000
Reach Compliance Code :
Compliant
Fall Time (Typ) :
26 ns
Rise Time :
55ns
Package Shape :
RECTANGULAR
Pin Count :
3
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
200V
Lead Free :
Lead Free
Datasheets
IXFK80N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, IXFK80N20 pinout, IXFK80N20 datasheet PDF, IXFK80N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK80N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK80N20


N-Channel Tube 30m Ω @ 500mA, 10V ±20V 5900pF @ 25V 280nC @ 10V 200V TO-264-3, TO-264AA

IXFK80N20 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [80 A] according to its drain current.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 320 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK80N20 Features


a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)


IXFK80N20 Applications


There are a lot of IXYS
IXFK80N20 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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