IXFK80N15Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Vgs (Max) :

±20V

Power Dissipation (Max) :

360W (Tc)

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

80 A

Power Dissipation-Max (Abs) :

360 W

Base Product Number :

IXFK80

Drain to Source Breakdown Voltage :

150V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0225Ohm

Mount :

Through Hole

Power Dissipation-Max :

360W Tc

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 4mA

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Terminal Form :

THROUGH-HOLE

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

150V

Number of Pins :

3

FET Feature :

--

JEDEC-95 Code :

TO-264

Packaging :

Tube

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

320 A

Series :

HiPerFET™

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rise Time :

55ns

Power Dissipation :

360W

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Minimum Operating Temperature :

- 55 C

Height :

26.16 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Published :

2001

Width :

5.13 mm

Brand :

IXYS

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Surface Mount :

No

Product Type :

MOSFET

Transistor Element Material :

SILICON

Length :

19.96 mm

RoHS :

Details

DS Breakdown Voltage-Min :

150 V

Avalanche Energy Rating (Eas) :

1500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

FET Type :

N-Channel

Tradename :

HyperFET

Number of Terminals :

3

Supplier Device Package :

TO-264AA (IXFK)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

68 ns

Product Status :

Active

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Fall Time (Typ) :

20 ns

Package / Case :

TO-264-3, TO-264AA

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Continuous Drain Current (ID) :

80A

Number of Elements :

1

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 40A, 10V