IXFK78N50P3
- Mfr.Part #
- IXFK78N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 78A TO264AA
- Stock
- 269
- In Stock :
- 269
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2011
- Package / Case :
- TO-264-3, TO-264AA
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 7 ns
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 1130W Tc
- Drain to Source Breakdown Voltage :
- 500V
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- -55 °C
- Pulsed Drain Current-Max (IDM) :
- 200A
- Height :
- 26.16mm
- Series :
- HiPerFET™, Polar3™
- Tradename :
- HiPerFET
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 60 ns
- Reach Compliance Code :
- Unknown
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 1130W (Tc)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 30 ns
- Base Product Number :
- IXFK78
- Maximum Operating Temperature :
- +150 °C
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- Single
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 78A
- Number of Terminations :
- 3
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 78A Tc
- Rise Time :
- 10ns
- Packaging :
- Tube
- Length :
- 19.96mm
- Rds On (Max) @ Id, Vgs :
- 68m Ω @ 500mA, 10V
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 9900pF @ 25V
- Number of Elements per Chip :
- 1
- Width :
- 5.13mm
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Qualification :
- -
- Factory Lead Time :
- 30 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 147nC @ 10V
- Transistor Type :
- 1 N-Channel
- Channel Type :
- N
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Continuous Drain Current Id :
- 78A
- ECCN Code :
- EAR99
- MSL :
- MSL 1 - Unlimited
- Transistor Polarity :
- N-Channel
- Package Type :
- TO-264
- Drain-source On Resistance-Max :
- 0.068Ohm
- Power Dissipation :
- 1.13kW
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFK78N50P3

N-Channel Tube 68m Ω @ 500mA, 10V ±30V 9900pF @ 25V 147nC @ 10V 500V TO-264-3, TO-264AA
IXFK78N50P3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9900pF @ 25V.This device conducts a continuous drain current (ID) of 78A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK78N50P3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 78A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFK78N50P3 Applications
There are a lot of IXYS
IXFK78N50P3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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