IXFK78N50P3

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Mfr.Part #
IXFK78N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 78A TO264AA
Stock
269
In Stock :
269

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2011
Package / Case :
TO-264-3, TO-264AA
Number of Pins :
3
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
Manufacturer :
IXYS
Vgs (Max) :
±30V
Fall Time (Typ) :
7 ns
Channel Mode :
Enhancement
Power Dissipation-Max :
1130W Tc
Drain to Source Breakdown Voltage :
500V
Qualification Status :
Not Qualified
Product Type :
MOSFET
Minimum Operating Temperature :
-55 °C
Pulsed Drain Current-Max (IDM) :
200A
Height :
26.16mm
Series :
HiPerFET™, Polar3™
Tradename :
HiPerFET
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
60 ns
Reach Compliance Code :
Unknown
Lead Free :
Lead Free
Power Dissipation (Max) :
1130W (Tc)
Number of Elements :
1
Element Configuration :
Single
Transistor Element Material :
SILICON
RoHS :
Details
Mounting Type :
Through Hole
Turn On Delay Time :
30 ns
Base Product Number :
IXFK78
Maximum Operating Temperature :
+150 °C
Supplier Device Package :
TO-264AA (IXFK)
Drain to Source Voltage (Vdss) :
500V
Configuration :
Single
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
78A
Number of Terminations :
3
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
78A Tc
Rise Time :
10ns
Packaging :
Tube
Length :
19.96mm
Rds On (Max) @ Id, Vgs :
68m Ω @ 500mA, 10V
Product Category :
MOSFET
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
9900pF @ 25V
Number of Elements per Chip :
1
Width :
5.13mm
Pin Count :
3
Avalanche Energy Rating (Eas) :
1500 mJ
Qualification :
-
Factory Lead Time :
30 Weeks
Gate Charge (Qg) (Max) @ Vgs :
147nC @ 10V
Transistor Type :
1 N-Channel
Channel Type :
N
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
5V @ 4mA
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Continuous Drain Current Id :
78A
ECCN Code :
EAR99
MSL :
MSL 1 - Unlimited
Transistor Polarity :
N-Channel
Package Type :
TO-264
Drain-source On Resistance-Max :
0.068Ohm
Power Dissipation :
1.13kW
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXFK78N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK78N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFK78N50P3 pinout, IXFK78N50P3 datasheet PDF, IXFK78N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK78N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK78N50P3


N-Channel Tube 68m Ω @ 500mA, 10V ±30V 9900pF @ 25V 147nC @ 10V 500V TO-264-3, TO-264AA

IXFK78N50P3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9900pF @ 25V.This device conducts a continuous drain current (ID) of 78A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK78N50P3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 78A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFK78N50P3 Applications


There are a lot of IXYS
IXFK78N50P3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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