IXFK74N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

185A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Drain to Source Resistance :

77 mΩ

Gate to Source Voltage (Vgs) :

30V

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.077Ohm

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

74 A

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-264AA (IXFK)

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Input Capacitance :

9.9 nF

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

Pin Count :

3

DS Breakdown Voltage-Min :

500 V

Power Dissipation-Max (Abs) :

1400 W

Power Dissipation (Max) :

1400W (Tc)

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

77m Ω @ 500mA, 10V

Power Dissipation-Max :

1400W Tc

Series :

HiPerFET™, PolarHV™

Max Operating Temperature :

150 °C

Qualification Status :

Not Qualified

Rds On Max :

77 mΩ

Max Power Dissipation :

1.4 kW

JEDEC-95 Code :

TO-264AA

Terminal Position :

Single

Package :

Tube

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Packaging :

Tube

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 25V

FET Type :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Manufacturer :

IXYS Corporation

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

74A

Power Dissipation :

1.4kW

Factory Lead Time :

26 Weeks

Drain to Source Voltage (Vdss) :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Min Operating Temperature :

-55 °C

RoHS :

Compliant

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Base Product Number :

IXFK74

FET Feature :

--

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 4mA

Surface Mount :

No

Case Connection :

DRAIN

Published :

2011

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

3000 mJ