IXFK73N30Q
- Mfr.Part #
- IXFK73N30Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 73A TO264AA
- Stock
- 11,963
- In Stock :
- 11,963
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Rise Time :
- 36ns
- Width :
- 5.13 mm
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Terminal Form :
- THROUGH-HOLE
- RoHS :
- Details
- Input Capacitance :
- 5.4 nF
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 26.16 mm
- Max Operating Temperature :
- 150 °C
- JESD-609 Code :
- e1
- Subcategory :
- MOSFETs
- Pulsed Drain Current-Max (IDM) :
- 292A
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Reach Compliance Code :
- Compliant
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 73A
- Power Dissipation :
- 500W
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 12 ns
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXFK73
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Brand :
- IXYS
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 82 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- DS Breakdown Voltage-Min :
- 300 V
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 500W (Tc)
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 300V
- Power Dissipation-Max :
- 500W Tc
- Rds On Max :
- 45 mΩ
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 19.96 mm
- Max Power Dissipation :
- 500 W
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.045Ohm
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Drain to Source Resistance :
- 45 mΩ
- Series :
- HiPerFET™
- Drain to Source Breakdown Voltage :
- 300V
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-264AA
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Package :
- Tube
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Tradename :
- HyperFET
- Package Shape :
- RECTANGULAR
- Min Operating Temperature :
- -55 °C
- Datasheets
- IXFK73N30Q

N-Channel Tube 45m Ω @ 500mA, 10V ±30V 5400pF @ 25V 195nC @ 10V 300V TO-264-3, TO-264AA
IXFK73N30Q Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 5400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 73A.When VGS=300V, and ID flows to VDS at 300VVDS, the drain-source breakdown voltage is 300V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 82 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 292A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 45 mΩ.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK73N30Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 73A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 292A.
single MOSFETs transistor is 45 mΩ
a 300V drain to source voltage (Vdss)
IXFK73N30Q Applications
There are a lot of IXYS
IXFK73N30Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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