IXFK73N30Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Product Type :

MOSFET

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

500W Tc

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Product Category :

MOSFET

Base Product Number :

IXFK73

Brand :

IXYS

Drain to Source Resistance :

45 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

292A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 500mA, 10V

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 4mA

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

2500 mJ

Case Connection :

DRAIN

Product Status :

Active

Package :

Tube

Number of Pins :

3

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Number of Terminations :

3

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.045Ohm

Input Capacitance :

5.4 nF

Max Power Dissipation :

500 W

Series :

HiPerFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

73A

Width :

5.13 mm

Number of Terminals :

3

Min Operating Temperature :

-55 °C

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

500W (Tc)

Height :

26.16 mm

Turn-Off Delay Time :

82 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Supplier Device Package :

TO-264AA (IXFK)

Qualification Status :

Not Qualified

Rds On Max :

45 mΩ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Subcategory :

MOSFETs

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Max Operating Temperature :

150 °C

Transistor Type :

1 N-Channel

Surface Mount :

No

Transistor Application :

SWITCHING

Published :

2004

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

73A Tc

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

300V

Number of Elements :

1

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

300 V

Length :

19.96 mm

Tradename :

HyperFET

Terminal Form :

THROUGH-HOLE

Number of Channels :

1 Channel

Configuration :

Single

JEDEC-95 Code :

TO-264AA

Rise Time :

36ns

Drain to Source Breakdown Voltage :

300V

ECCN Code :

EAR99

FET Type :

N-Channel

Element Configuration :

Single

Mount :

Through Hole

Packaging :

Tube

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Power Dissipation :

500W