IXFK73N30Q

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Mfr.Part #
IXFK73N30Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 73A TO264AA
Stock
11,963
In Stock :
11,963

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Number of Pins :
3
Package / Case :
TO-264-3, TO-264AA
Transistor Application :
SWITCHING
Number of Terminations :
3
FET Type :
N-Channel
Mount :
Through Hole
Rise Time :
36ns
Width :
5.13 mm
Mounting Style :
Through Hole
FET Feature :
--
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
Terminal Form :
THROUGH-HOLE
RoHS :
Details
Input Capacitance :
5.4 nF
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
73A Tc
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
26.16 mm
Max Operating Temperature :
150 °C
JESD-609 Code :
e1
Subcategory :
MOSFETs
Pulsed Drain Current-Max (IDM) :
292A
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Reach Compliance Code :
Compliant
Published :
2004
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
73A
Power Dissipation :
500W
Product Category :
MOSFET
Fall Time (Typ) :
12 ns
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXFK73
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 25V
Manufacturer :
IXYS
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
2500 mJ
Transistor Element Material :
SILICON
Surface Mount :
No
Brand :
IXYS
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
82 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-264AA (IXFK)
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4V @ 4mA
DS Breakdown Voltage-Min :
300 V
Number of Channels :
1 Channel
Power Dissipation (Max) :
500W (Tc)
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
300V
Power Dissipation-Max :
500W Tc
Rds On Max :
45 mΩ
Operating Mode :
ENHANCEMENT MODE
Length :
19.96 mm
Max Power Dissipation :
500 W
Pin Count :
3
Drain-source On Resistance-Max :
0.045Ohm
Rds On (Max) @ Id, Vgs :
45m Ω @ 500mA, 10V
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Drain to Source Resistance :
45 mΩ
Series :
HiPerFET™
Drain to Source Breakdown Voltage :
300V
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
JEDEC-95 Code :
TO-264AA
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Package :
Tube
Element Configuration :
Single
Number of Terminals :
3
Terminal Position :
Single
Tradename :
HyperFET
Package Shape :
RECTANGULAR
Min Operating Temperature :
-55 °C
Datasheets
IXFK73N30Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK73N30Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFK73N30Q pinout, IXFK73N30Q datasheet PDF, IXFK73N30Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK73N30Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK73N30Q


N-Channel Tube 45m Ω @ 500mA, 10V ±30V 5400pF @ 25V 195nC @ 10V 300V TO-264-3, TO-264AA

IXFK73N30Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 5400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 73A.When VGS=300V, and ID flows to VDS at 300VVDS, the drain-source breakdown voltage is 300V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 82 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 292A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 45 mΩ.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK73N30Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 73A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 292A.
single MOSFETs transistor is 45 mΩ
a 300V drain to source voltage (Vdss)


IXFK73N30Q Applications


There are a lot of IXYS
IXFK73N30Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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