IXFK73N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

100 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Number of Pins :

3

Fall Time (Typ) :

50 ns

Packaging :

Tube

Qualification Status :

Not Qualified

Tradename :

HyperFET

Power Dissipation (Max) :

500W (Tc)

REACH SVHC :

No SVHC

Power Dissipation-Max :

500W Tc

Terminal Position :

Single

Nominal Vgs :

4 V

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Package / Case :

TO-264-3, TO-264AA

Product Status :

Active

Number of Terminations :

3

Height :

26.16 mm

Vgs(th) (Max) @ Id :

4V @ 8mA

JESD-609 Code :

e1

Channel Mode :

Enhancement

Base Product Number :

IXFK73

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection :

DRAIN

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Power Dissipation :

500W

Package Shape :

RECTANGULAR

Width :

5.13 mm

Dual Supply Voltage :

300V

JEDEC-95 Code :

TO-264

Pbfree Code :

yes

Radiation Hardening :

No

Rise Time :

80ns

Pulsed Drain Current-Max (IDM) :

292A

Supplier Device Package :

TO-264AA (IXFK)

RoHS :

Details

Terminal Form :

THROUGH-HOLE

Resistance :

45mOhm

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

73 A

Product Category :

MOSFET

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

300 V

Power Dissipation Ambient-Max :

500 W

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

300V

Threshold Voltage :

4V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max (Abs) :

500 W

Package :

Tube

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

Product Type :

MOSFET

Mounting Style :

Through Hole

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Length :

19.96 mm

Drain-source On Resistance-Max :

0.045 Ω

Drain to Source Breakdown Voltage :

300V

Minimum Operating Temperature :

- 55 C

Element Configuration :

Single

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

300V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™

Rds On (Max) @ Id, Vgs :

45m Ω @ 500mA, 10V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

73A

Current Rating :

73A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

FET Feature :

--

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V