IXFK73N30
- Mfr.Part #
- IXFK73N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 73A TO264AA
- Stock
- 22,101
- In Stock :
- 22,101
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Power Dissipation Ambient-Max :
- 500 W
- Drain-source On Resistance-Max :
- 0.045 Ω
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Voltage - Rated DC :
- 300V
- Tradename :
- HyperFET
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Power Dissipation (Max) :
- 500W (Tc)
- Fall Time (Typ) :
- 50 ns
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Case Connection :
- DRAIN
- Dual Supply Voltage :
- 300V
- Power Dissipation-Max (Abs) :
- 500 W
- Product Status :
- Active
- JEDEC-95 Code :
- TO-264
- Power Dissipation :
- 500W
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 300V
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminals :
- 3
- Published :
- 2001
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 30 Weeks
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 292A
- Turn-Off Delay Time :
- 100 ns
- Continuous Drain Current (ID) :
- 73A
- Configuration :
- Single
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- RoHS :
- Details
- Power Dissipation-Max :
- 500W Tc
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 300V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Height :
- 26.16 mm
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- Resistance :
- 45mOhm
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Transistor Application :
- SWITCHING
- Rise Time :
- 80ns
- ECCN Code :
- EAR99
- Width :
- 5.13 mm
- Number of Pins :
- 3
- Transistor Type :
- 1 N-Channel
- Current Rating :
- 73A
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 300 V
- Channel Mode :
- Enhancement
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Style :
- Through Hole
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™
- Base Product Number :
- IXFK73
- Length :
- 19.96 mm
- Drain Current-Max (Abs) (ID) :
- 73 A
- Datasheets
- IXFK73N30

N-Channel Tube 45m Ω @ 500mA, 10V ±20V 9000pF @ 25V 360nC @ 10V 300V TO-264-3, TO-264AA
IXFK73N30 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 73A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.A device can conduct a maximum continuous current of [73 A] according to its drain current.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 292A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK73N30 Features
a continuous drain current (ID) of 73A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 292A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)
IXFK73N30 Applications
There are a lot of IXYS
IXFK73N30 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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