IXFK66N50Q2

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Mfr.Part #
IXFK66N50Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 66A TO264AA
Stock
25,491
In Stock :
25,491

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Turn On Delay Time :
32 ns
Power Dissipation (Max) :
735W (Tc)
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
66 A
Reach Compliance Code :
Compliant
Power Dissipation-Max :
735W Tc
Vgs (Max) :
±30V
Turn-Off Delay Time :
60 ns
Rise Time :
16ns
DS Breakdown Voltage-Min :
500 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.13mm
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
4000 mJ
Fall Time (Typ) :
10 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
500V
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFK66
Input Capacitance (Ciss) (Max) @ Vds :
8400pF @ 25V
JESD-609 Code :
e1
Pulsed Drain Current-Max (IDM) :
264A
Product Status :
Obsolete
Element Configuration :
Single
Pin Count :
3
JEDEC-95 Code :
TO-264AA
JESD-30 Code :
R-PSFM-T3
Qualification Status :
Not Qualified
Manufacturer :
IXYS Corporation
Drain to Source Voltage (Vdss) :
500V
Continuous Drain Current (ID) :
66A
Published :
2004
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Length :
19.96mm
Package / Case :
TO-264-3, TO-264AA
Number of Terminations :
3
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
66A Tc
Power Dissipation-Max (Abs) :
735 W
Package :
Tube
Series :
HiPerFET™
Rds On (Max) @ Id, Vgs :
80m Ω @ 500mA, 10V
Supplier Device Package :
TO-264AA (IXFK)
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Number of Pins :
3
Mounting Type :
Through Hole
Power Dissipation :
735W
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Number of Elements :
1
Drain-source On Resistance-Max :
0.08Ohm
Number of Terminals :
3
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
26.16mm
Datasheets
IXFK66N50Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK66N50Q2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, IXFK66N50Q2 pinout, IXFK66N50Q2 datasheet PDF, IXFK66N50Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK66N50Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK66N50Q2


N-Channel Tube 80m Ω @ 500mA, 10V ±30V 8400pF @ 25V 200nC @ 10V 500V TO-264-3, TO-264AA

IXFK66N50Q2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8400pF @ 25V.This device has a continuous drain current (ID) of [66A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 66 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 264A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 32 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK66N50Q2 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 264A.
a 500V drain to source voltage (Vdss)


IXFK66N50Q2 Applications


There are a lot of IXYS
IXFK66N50Q2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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