IXFK66N50Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

735 W

FET Feature :

--

Power Dissipation :

735W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Pulsed Drain Current-Max (IDM) :

264A

Number of Terminations :

3

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

26.16mm

Rise Time :

16ns

Element Configuration :

Single

Continuous Drain Current (ID) :

66A

Published :

2004

Number of Elements :

1

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500 V

Number of Terminals :

3

Power Dissipation (Max) :

735W (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e1

Case Connection :

DRAIN

Length :

19.96mm

Drain to Source Breakdown Voltage :

500V

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Surface Mount :

No

Width :

5.13mm

Operating Temperature :

-55°C~150°C TJ

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Avalanche Energy Rating (Eas) :

4000 mJ

Rds On (Max) @ Id, Vgs :

80m Ω @ 500mA, 10V

Package / Case :

TO-264-3, TO-264AA

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-264AA (IXFK)

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 25V

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-264AA

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

735W Tc

Base Product Number :

IXFK66

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Mount :

Through Hole

Package :

Tube

Drain-source On Resistance-Max :

0.08Ohm

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Series :

HiPerFET™

Manufacturer :

IXYS Corporation

Turn-Off Delay Time :

60 ns

Turn On Delay Time :

32 ns

Fall Time (Typ) :

10 ns

Drain Current-Max (Abs) (ID) :

66 A

Pin Count :

3

JESD-30 Code :

R-PSFM-T3