IXFK64N60Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Turn-Off Delay Time :

50 ns

Power Dissipation :

1.25kW

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Brand :

IXYS

Transistor Application :

SWITCHING

Tradename :

HiPerFET

Published :

2011

Product Category :

MOSFET

Mounting Style :

Through Hole

Product Status :

Active

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

1250W (Tc)

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9930pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Power Dissipation-Max :

1250W Tc

FET Feature :

--

Transistor Type :

1 N-Channel

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Series :

HiPerFET™

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

250A

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Length :

19.96mm

Configuration :

Single

RoHS :

Details

Turn On Delay Time :

45 ns

Transistor Element Material :

SILICON

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

95m Ω @ 32A, 10V

Rise Time :

300ns

Number of Elements :

1

Package / Case :

TO-264-3, TO-264AA

Base Product Number :

IXFK64

Product Type :

MOSFET

FET Type :

N-Channel

Factory Lead Time :

30 Weeks

Continuous Drain Current (ID) :

64A

Number of Terminations :

3

Packaging :

Tube

Height :

26.16mm

Supplier Device Package :

TO-264AA (IXFK)

Width :

5.13mm

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.095Ohm

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Case Connection :

DRAIN

Mounting Type :

Through Hole