IXFK64N60P3
- Mfr.Part #
- IXFK64N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 64A TO264AA
- Stock
- 25,878
- In Stock :
- 25,878
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Package Type :
- TO-264
- Package / Case :
- TO-264-3, TO-264AA
- Vgs (Max) :
- ±30V
- Base Product Number :
- IXFK64
- Mount :
- Through Hole
- Minimum Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Elements per Chip :
- 1
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 160A
- Rise Time :
- 17ns
- Maximum Operating Temperature :
- +150 °C
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain to Source Breakdown Voltage :
- 600V
- Manufacturer :
- IXYS
- Configuration :
- Single
- Tradename :
- HiPerFET
- Power Dissipation :
- 1.13kW
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Series :
- HiPerFET™, Polar3™
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 64A
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 66 ns
- Width :
- 5.13mm
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Fall Time (Typ) :
- 11 ns
- Drain-source On Resistance-Max :
- 0.095Ohm
- Power Dissipation-Max :
- 1130W Tc
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 1130W (Tc)
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 30 Weeks
- FET Feature :
- --
- RoHS :
- Details
- Turn On Delay Time :
- 43 ns
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 9900pF @ 25V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Brand :
- IXYS
- Channel Type :
- N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Lead Free :
- Lead Free
- Mounting Style :
- Through Hole
- Height :
- 26.16mm
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 32A, 10V
- Number of Elements :
- 1
- Package :
- Tube
- Length :
- 19.96mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Datasheets
- IXFK64N60P3

N-Channel Tube 95m Ω @ 32A, 10V ±30V 9900pF @ 25V 145nC @ 10V 600V TO-264-3, TO-264AA
IXFK64N60P3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 64A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 66 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 43 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK64N60P3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 160A.
a 600V drain to source voltage (Vdss)
IXFK64N60P3 Applications
There are a lot of IXYS
IXFK64N60P3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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