IXFK64N60P

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Mfr.Part #
IXFK64N60P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 64A TO264AA
Stock
150
In Stock :
150

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-264-3, TO-264AA
Drain to Source Breakdown Voltage :
600V
FET Type :
N-Channel
Number of Terminations :
3
Pin Count :
3
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2006
Product Category :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Supplier Device Package :
TO-264AA (IXFK)
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Maximum Operating Temperature :
+ 150 C
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
Turn-Off Delay Time :
79 ns
Power Dissipation :
1.04kW
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
64A
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
150A
Mounting Style :
Through Hole
Fall Time (Typ) :
24 ns
Qualification Status :
Not Qualified
Length :
19.96 mm
Width :
5.13 mm
ECCN Code :
EAR99
Current Rating :
64A
Transistor Element Material :
SILICON
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Threshold Voltage :
5V
Vgs (Max) :
±30V
Tradename :
HiPerFET
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Additional Feature :
AVALANCHE RATED
Series :
HiPerFET™, PolarHT™
Transistor Polarity :
N-Channel
Height :
26.16 mm
Pbfree Code :
yes
Subcategory :
MOSFETs
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
600 V
Power Dissipation (Max) :
1040W (Tc)
Rds On (Max) @ Id, Vgs :
96m Ω @ 500mA, 10V
Avalanche Energy Rating (Eas) :
3500 mJ
Product Status :
Active
Brand :
IXYS
Power Dissipation-Max :
1040W Tc
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
Mounting Type :
Through Hole
Rise Time :
23ns
Packaging :
Tube
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Voltage - Rated DC :
600V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5V @ 8mA
Package :
Tube
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
600V
Drain-source On Resistance-Max :
0.096Ohm
Reach Compliance Code :
Compliant
REACH SVHC :
No SVHC
JEDEC-95 Code :
TO-264AA
Mount :
Through Hole
RoHS :
Details
Number of Pins :
3
FET Feature :
--
Case Connection :
DRAIN
Surface Mount :
No
Channel Mode :
Enhancement
Base Product Number :
IXFK64
JESD-30 Code :
R-PSFM-T3
Datasheets
IXFK64N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK64N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXFK64N60P pinout, IXFK64N60P datasheet PDF, IXFK64N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK64N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK64N60P


N-Channel Tube 96m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V 600V TO-264-3, TO-264AA

IXFK64N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 64A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 79 ns.Its maximum pulsed drain current is 150A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK64N60P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 150A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFK64N60P Applications


There are a lot of IXYS
IXFK64N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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