IXFK64N60P

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Mfr.Part #
IXFK64N60P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 64A TO264AA
Stock
150
In Stock :
150

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
1040W (Tc)
ECCN Code :
EAR99
Channel Mode :
Enhancement
Number of Elements :
1
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
3500 mJ
Voltage - Rated DC :
600V
Drain-source On Resistance-Max :
0.096Ohm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Feature :
--
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-264AA (IXFK)
Number of Terminals :
3
Power Dissipation :
1.04kW
FET Type :
N-Channel
Mounting Style :
Through Hole
Width :
5.13 mm
Package / Case :
TO-264-3, TO-264AA
Drain to Source Voltage (Vdss) :
600V
Current Rating :
64A
JESD-30 Code :
R-PSFM-T3
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Transistor Application :
SWITCHING
Tradename :
HiPerFET
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Brand :
IXYS
Height :
26.16 mm
Case Connection :
DRAIN
Fall Time (Typ) :
24 ns
Series :
HiPerFET™, PolarHT™
RoHS :
Details
Transistor Element Material :
SILICON
Number of Pins :
3
Continuous Drain Current (ID) :
64A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
96m Ω @ 500mA, 10V
Base Product Number :
IXFK64
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 8mA
Pbfree Code :
yes
Product Type :
MOSFET
Turn-Off Delay Time :
79 ns
Mounting Type :
Through Hole
Pin Count :
3
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
150A
REACH SVHC :
No SVHC
Rise Time :
23ns
Threshold Voltage :
5V
Manufacturer :
IXYS
Lead Free :
Lead Free
Vgs (Max) :
±30V
JESD-609 Code :
e1
Power Dissipation-Max :
1040W Tc
Gate to Source Voltage (Vgs) :
30V
Configuration :
Single
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
Length :
19.96 mm
Packaging :
Tube
Factory Lead Time :
30 Weeks
Published :
2006
DS Breakdown Voltage-Min :
600 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Subcategory :
MOSFETs
JEDEC-95 Code :
TO-264AA
Datasheets
IXFK64N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK64N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFK64N60P pinout, IXFK64N60P datasheet PDF, IXFK64N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK64N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK64N60P


N-Channel Tube 96m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V 600V TO-264-3, TO-264AA

IXFK64N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 64A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 79 ns.Its maximum pulsed drain current is 150A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK64N60P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 150A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFK64N60P Applications


There are a lot of IXYS
IXFK64N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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