IXFK64N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Product Category :

MOSFET

Power Dissipation :

1.04kW

Continuous Drain Current (ID) :

64A

Transistor Type :

1 N-Channel

JESD-609 Code :

e1

Power Dissipation-Max :

1040W Tc

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

150A

Avalanche Energy Rating (Eas) :

3500 mJ

Product Status :

Active

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Supplier Device Package :

TO-264AA (IXFK)

DS Breakdown Voltage-Min :

600 V

Pbfree Code :

yes

Number of Terminals :

3

Subcategory :

MOSFETs

Voltage - Rated DC :

600V

Number of Terminations :

3

Case Connection :

DRAIN

Pin Count :

3

REACH SVHC :

No SVHC

Transistor Polarity :

N-Channel

Height :

26.16 mm

Minimum Operating Temperature :

- 55 C

Lead Free :

Lead Free

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V

Length :

19.96 mm

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-264AA

FET Feature :

--

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

96m Ω @ 500mA, 10V

Qualification Status :

Not Qualified

Current Rating :

64A

Series :

HiPerFET™, PolarHT™

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Tradename :

HiPerFET

Product Type :

MOSFET

Drain-source On Resistance-Max :

0.096Ohm

Packaging :

Tube

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Width :

5.13 mm

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Base Product Number :

IXFK64

Manufacturer :

IXYS

Turn-Off Delay Time :

79 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Rise Time :

23ns

Published :

2006

Power Dissipation (Max) :

1040W (Tc)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-264-3, TO-264AA

Vgs(th) (Max) @ Id :

5V @ 8mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Fall Time (Typ) :

24 ns

Package :

Tube

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Threshold Voltage :

5V

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED