IXFK64N60P
- Mfr.Part #
- IXFK64N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 64A TO264AA
- Stock
- 150
- In Stock :
- 150
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-264-3, TO-264AA
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Pin Count :
- 3
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2006
- Product Category :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Supplier Device Package :
- TO-264AA (IXFK)
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 79 ns
- Power Dissipation :
- 1.04kW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 64A
- Factory Lead Time :
- 30 Weeks
- Pulsed Drain Current-Max (IDM) :
- 150A
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 24 ns
- Qualification Status :
- Not Qualified
- Length :
- 19.96 mm
- Width :
- 5.13 mm
- ECCN Code :
- EAR99
- Current Rating :
- 64A
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- Threshold Voltage :
- 5V
- Vgs (Max) :
- ±30V
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Series :
- HiPerFET™, PolarHT™
- Transistor Polarity :
- N-Channel
- Height :
- 26.16 mm
- Pbfree Code :
- yes
- Subcategory :
- MOSFETs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 600 V
- Power Dissipation (Max) :
- 1040W (Tc)
- Rds On (Max) @ Id, Vgs :
- 96m Ω @ 500mA, 10V
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Product Status :
- Active
- Brand :
- IXYS
- Power Dissipation-Max :
- 1040W Tc
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Rise Time :
- 23ns
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Voltage - Rated DC :
- 600V
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 600V
- Drain-source On Resistance-Max :
- 0.096Ohm
- Reach Compliance Code :
- Compliant
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-264AA
- Mount :
- Through Hole
- RoHS :
- Details
- Number of Pins :
- 3
- FET Feature :
- --
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Channel Mode :
- Enhancement
- Base Product Number :
- IXFK64
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IXFK64N60P

N-Channel Tube 96m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V 600V TO-264-3, TO-264AA
IXFK64N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 64A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 79 ns.Its maximum pulsed drain current is 150A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK64N60P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 150A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)
IXFK64N60P Applications
There are a lot of IXYS
IXFK64N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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