IXFK64N50Q3

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Mfr.Part #
IXFK64N50Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 64A TO264AA
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
1000 W
Product Type :
MOSFET
Vgs (Max) :
±30V
Brand :
IXYS
Rise Time :
250ns
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Element Configuration :
Single
FET Feature :
--
Number of Terminations :
3
Mounting Style :
Through Hole
Height :
26.16mm
Packaging :
Tube
Supplier Device Package :
TO-264AA (IXFK)
Transistor Application :
SWITCHING
Package :
Tube
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Package / Case :
TO-264-3, TO-264AA
JESD-30 Code :
R-PSFM-T3
Published :
2011
Number of Pins :
3
Channel Type :
N
Input Capacitance (Ciss) (Max) @ Vds :
6950pF @ 25V
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
160A
Case Connection :
DRAIN
Series :
HiPerFET™
JEDEC-95 Code :
TO-264AA
Length :
19.96mm
Base Product Number :
IXFK64
Power Dissipation-Max :
1000W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements per Chip :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS :
Details
Pin Count :
3
Avalanche Energy Rating (Eas) :
4000 mJ
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Power Dissipation (Max) :
1000W (Tc)
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
64A
Product Category :
MOSFET
Configuration :
Single
Mount :
Through Hole
Maximum Operating Temperature :
+150 °C
Factory Lead Time :
30 Weeks
Product Status :
Active
Turn On Delay Time :
36 ns
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Tradename :
HiPerFET
Turn-Off Delay Time :
46 ns
Width :
5.13mm
Drain to Source Breakdown Voltage :
500V
Number of Terminals :
3
Drain-source On Resistance-Max :
0.085Ohm
DS Breakdown Voltage-Min :
500 V
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
-55 °C
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
64 A
Surface Mount :
No
Transistor Polarity :
N-Channel
Power Dissipation :
1kW
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Drain to Source Voltage (Vdss) :
500V
Gate to Source Voltage (Vgs) :
30V
Package Type :
TO-264
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
85m Ω @ 32A, 10V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Datasheets
IXFK64N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK64N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK64N50Q3 pinout, IXFK64N50Q3 datasheet PDF, IXFK64N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK64N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK64N50Q3


N-Channel Tube 85m Ω @ 32A, 10V ±30V 6950pF @ 25V 145nC @ 10V 500V TO-264-3, TO-264AA

IXFK64N50Q3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6950pF @ 25V.This device has a continuous drain current (ID) of [64A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 64 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 46 ns.A maximum pulsed drain current of 160A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK64N50Q3 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)


IXFK64N50Q3 Applications


There are a lot of IXYS
IXFK64N50Q3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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