IXFK64N50Q3
- Mfr.Part #
- IXFK64N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 64A TO264AA
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 1000 W
- Product Type :
- MOSFET
- Vgs (Max) :
- ±30V
- Brand :
- IXYS
- Rise Time :
- 250ns
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Element Configuration :
- Single
- FET Feature :
- --
- Number of Terminations :
- 3
- Mounting Style :
- Through Hole
- Height :
- 26.16mm
- Packaging :
- Tube
- Supplier Device Package :
- TO-264AA (IXFK)
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2011
- Number of Pins :
- 3
- Channel Type :
- N
- Input Capacitance (Ciss) (Max) @ Vds :
- 6950pF @ 25V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 160A
- Case Connection :
- DRAIN
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-264AA
- Length :
- 19.96mm
- Base Product Number :
- IXFK64
- Power Dissipation-Max :
- 1000W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements per Chip :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Details
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Power Dissipation (Max) :
- 1000W (Tc)
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 64A
- Product Category :
- MOSFET
- Configuration :
- Single
- Mount :
- Through Hole
- Maximum Operating Temperature :
- +150 °C
- Factory Lead Time :
- 30 Weeks
- Product Status :
- Active
- Turn On Delay Time :
- 36 ns
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Tradename :
- HiPerFET
- Turn-Off Delay Time :
- 46 ns
- Width :
- 5.13mm
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.085Ohm
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- -55 °C
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- THROUGH-HOLE
- Drain Current-Max (Abs) (ID) :
- 64 A
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 1kW
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Package Type :
- TO-264
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 32A, 10V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Datasheets
- IXFK64N50Q3

N-Channel Tube 85m Ω @ 32A, 10V ±30V 6950pF @ 25V 145nC @ 10V 500V TO-264-3, TO-264AA
IXFK64N50Q3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6950pF @ 25V.This device has a continuous drain current (ID) of [64A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 64 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 46 ns.A maximum pulsed drain current of 160A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFK64N50Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
a 500V drain to source voltage (Vdss)
IXFK64N50Q3 Applications
There are a lot of IXYS
IXFK64N50Q3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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