IXFK64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current (ID) :

64A

Width :

5.13 mm

Height :

26.16 mm

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation-Max (Abs) :

830 W

Avalanche Energy Rating (Eas) :

2500 mJ

FET Feature :

--

Package / Case :

TO-264-3, TO-264AA

Drain Current-Max (Abs) (ID) :

64 A

Product Type :

MOSFET

Power Dissipation (Max) :

830W (Tc)

Product Status :

Active

Current Rating :

64A

Mounting Style :

Through Hole

Continuous Drain Current Id :

64A

Pulsed Drain Current-Max (IDM) :

150A

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Case Connection :

DRAIN

Number of Channels :

1 Channel

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Published :

2006

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFK64

Element Configuration :

Single

Manufacturer :

IXYS

RoHS :

Details

Number of Elements :

1

Channel Mode :

Enhancement

REACH SVHC :

No SVHC

Turn-Off Delay Time :

85 ns

Configuration :

Single

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

500V

Voltage - Rated DC :

500V

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

30 Weeks

Power Dissipation :

830W

Surface Mount :

No

Resistance :

85mOhm

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-264AA (IXFK)

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Power Dissipation-Max :

830W Tc

FET Type :

N-Channel

Number of Terminals :

3

Qualification :

-

Length :

19.96 mm

MSL :

-

Fall Time (Typ) :

22 ns

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

30V

Brand :

IXYS

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

500 V

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Drain-source On Resistance-Max :

0.085 Ω

Channel Type :

N Channel

JESD-30 Code :

R-PSFM-T3

Threshold Voltage :

5.5V

Package :

Tube

Rise Time :

25ns

Series :

HiPerFET™, PolarHT™

Mounting Type :

Through Hole

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

85m Ω @ 32A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Number of Pins :

3

Drain to Source Breakdown Voltage :

500V

JEDEC-95 Code :

TO-264AA