IXFK64N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

30 Weeks

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Height :

26.16 mm

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

85m Ω @ 32A, 10V

Vgs (Max) :

±30V

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

64A

Width :

5.13 mm

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

64 A

Current Rating :

64A

RoHS :

Details

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Product Category :

MOSFET

Surface Mount :

No

Lead Free :

Lead Free

Resistance :

85mOhm

Power Dissipation :

830W

Number of Pins :

3

Base Product Number :

IXFK64

JESD-609 Code :

e1

Qualification :

-

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation (Max) :

830W (Tc)

Rise Time :

25ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Length :

19.96 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max :

830W Tc

Turn-Off Delay Time :

85 ns

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

2500 mJ

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Number of Terminals :

3

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Manufacturer :

IXYS

Number of Terminations :

3

Mount :

Through Hole

FET Type :

N-Channel

Product Status :

Active

Transistor Polarity :

N-Channel

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-264-3, TO-264AA

Product Type :

MOSFET

Continuous Drain Current Id :

64A

Package :

Tube

Pulsed Drain Current-Max (IDM) :

150A

Drain to Source Breakdown Voltage :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

22 ns

Mounting Type :

Through Hole

Packaging :

Tube

Series :

HiPerFET™, PolarHT™

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

MSL :

-

Supplier Device Package :

TO-264AA (IXFK)

Channel Type :

N Channel

Published :

2006

Package Shape :

RECTANGULAR

Threshold Voltage :

5.5V

DS Breakdown Voltage-Min :

500 V

Tradename :

HiPerFET

Drain-source On Resistance-Max :

0.085 Ω

JEDEC-95 Code :

TO-264AA

Voltage - Rated DC :

500V

Power Dissipation-Max (Abs) :

830 W

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Brand :

IXYS

Transistor Type :

1 N-Channel