IXFK60N55Q2
- Mfr.Part #
- IXFK60N55Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 60A TO264AA
- Stock
- 6,027
- In Stock :
- 6,027
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 240A
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.088 Ω
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 550V
- Published :
- 2004
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- Number of Terminals :
- 3
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 30A, 10V
- Base Product Number :
- IXFK60
- Continuous Drain Current (ID) :
- 60A
- Manufacturer :
- IXYS
- Length :
- 19.96mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 7300pF @ 25V
- Terminal Position :
- Single
- Brand :
- IXYS
- Rise Time :
- 14ns
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Height :
- 26.16mm
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Min Operating Temperature :
- -55 °C
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Resistance :
- 88mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 735W
- Mounting Style :
- Through Hole
- Subcategory :
- MOSFETs
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-264AA
- Pbfree Code :
- yes
- Tradename :
- HyperFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Turn-On Delay Time :
- 22 ns
- Turn-Off Delay Time :
- 57 ns
- Configuration :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- Input Capacitance :
- 7.3 nF
- DS Breakdown Voltage-Min :
- 550 V
- Width :
- 5.13mm
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Series :
- HiPerFET™
- Drain to Source Resistance :
- 88 mΩ
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Power Dissipation (Max) :
- 735W (Tc)
- Surface Mount :
- No
- Max Operating Temperature :
- 150 °C
- Power Dissipation-Max :
- 735W Tc
- Supplier Device Package :
- TO-264AA (IXFK)
- Element Configuration :
- Single
- Max Power Dissipation :
- 735 W
- Channel Mode :
- Enhancement
- Fall Time (Typ) :
- 9 ns
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Turn On Delay Time :
- 22 ns
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Product Category :
- MOSFET
- Rds On Max :
- 88 mΩ
- Number of Elements :
- 1
- RoHS :
- Compliant
- Drain to Source Voltage (Vdss) :
- 550V
- Gate to Source Voltage (Vgs) :
- 30V
- Package :
- Tube
- Mount :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Datasheets
- IXFK60N55Q2

N-Channel Tube 88m Ω @ 30A, 10V ±30V 7300pF @ 25V 200nC @ 10V 550V TO-264-3, TO-264AA
IXFK60N55Q2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=550V. And this device has 550V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 57 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 88 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 22 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 550 V in order to maintain normal operation.Operating this transistor requires a 550V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK60N55Q2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 240A.
single MOSFETs transistor is 88 mΩ
a 550V drain to source voltage (Vdss)
IXFK60N55Q2 Applications
There are a lot of IXYS
IXFK60N55Q2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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