IXFK60N55Q2
- Mfr.Part #
- IXFK60N55Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 60A TO264AA
- Stock
- 6,027
- In Stock :
- 6,027
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- FET Feature :
- --
- Brand :
- IXYS
- Number of Elements :
- 1
- Drain to Source Resistance :
- 88 mΩ
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-264AA
- Power Dissipation-Max :
- 735W Tc
- Mount :
- Through Hole
- Surface Mount :
- No
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150 °C
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 240A
- Rise Time :
- 14ns
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- N-Channel
- Turn On Delay Time :
- 22 ns
- Power Dissipation :
- 735W
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXFK60
- Max Power Dissipation :
- 735 W
- Tradename :
- HyperFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 7300pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Power Dissipation (Max) :
- 735W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HiPerFET™
- Package :
- Tube
- Width :
- 5.13mm
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Published :
- 2004
- Configuration :
- Single
- Product Type :
- MOSFET
- Height :
- 26.16mm
- Fall Time (Typ) :
- 9 ns
- Turn-On Delay Time :
- 22 ns
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- RoHS :
- Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-264-3, TO-264AA
- Continuous Drain Current (ID) :
- 60A
- Turn-Off Delay Time :
- 57 ns
- Drain-source On Resistance-Max :
- 0.088 Ω
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 7.3 nF
- DS Breakdown Voltage-Min :
- 550 V
- Drain to Source Voltage (Vdss) :
- 550V
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Pins :
- 3
- Length :
- 19.96mm
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 550V
- Qualification Status :
- Not Qualified
- Rds On Max :
- 88 mΩ
- Resistance :
- 88mOhm
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 30A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXFK60N55Q2

N-Channel Tube 88m Ω @ 30A, 10V ±30V 7300pF @ 25V 200nC @ 10V 550V TO-264-3, TO-264AA
IXFK60N55Q2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=550V. And this device has 550V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 57 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 88 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 22 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 550 V in order to maintain normal operation.Operating this transistor requires a 550V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK60N55Q2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 240A.
single MOSFETs transistor is 88 mΩ
a 550V drain to source voltage (Vdss)
IXFK60N55Q2 Applications
There are a lot of IXYS
IXFK60N55Q2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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