IXFK60N55Q2

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Mfr.Part #
IXFK60N55Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 550V 60A TO264AA
Stock
6,027
In Stock :
6,027

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
240A
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.088 Ω
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
550V
Published :
2004
Transistor Type :
1 N-Channel
Product Status :
Active
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
88m Ω @ 30A, 10V
Base Product Number :
IXFK60
Continuous Drain Current (ID) :
60A
Manufacturer :
IXYS
Length :
19.96mm
Input Capacitance (Ciss) (Max) @ Vds :
7300pF @ 25V
Terminal Position :
Single
Brand :
IXYS
Rise Time :
14ns
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
Height :
26.16mm
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Min Operating Temperature :
-55 °C
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Resistance :
88mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
735W
Mounting Style :
Through Hole
Subcategory :
MOSFETs
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-264AA
Pbfree Code :
yes
Tradename :
HyperFET
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Turn-On Delay Time :
22 ns
Turn-Off Delay Time :
57 ns
Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
Input Capacitance :
7.3 nF
DS Breakdown Voltage-Min :
550 V
Width :
5.13mm
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Series :
HiPerFET™
Drain to Source Resistance :
88 mΩ
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Power Dissipation (Max) :
735W (Tc)
Surface Mount :
No
Max Operating Temperature :
150 °C
Power Dissipation-Max :
735W Tc
Supplier Device Package :
TO-264AA (IXFK)
Element Configuration :
Single
Max Power Dissipation :
735 W
Channel Mode :
Enhancement
Fall Time (Typ) :
9 ns
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Turn On Delay Time :
22 ns
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
4000 mJ
Product Category :
MOSFET
Rds On Max :
88 mΩ
Number of Elements :
1
RoHS :
Compliant
Drain to Source Voltage (Vdss) :
550V
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Number of Terminations :
3
Datasheets
IXFK60N55Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK60N55Q2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, IXFK60N55Q2 pinout, IXFK60N55Q2 datasheet PDF, IXFK60N55Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK60N55Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK60N55Q2


N-Channel Tube 88m Ω @ 30A, 10V ±30V 7300pF @ 25V 200nC @ 10V 550V TO-264-3, TO-264AA

IXFK60N55Q2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=550V. And this device has 550V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 57 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 88 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 22 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 550 V in order to maintain normal operation.Operating this transistor requires a 550V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK60N55Q2 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 240A.
single MOSFETs transistor is 88 mΩ
a 550V drain to source voltage (Vdss)


IXFK60N55Q2 Applications


There are a lot of IXYS
IXFK60N55Q2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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