IXFK60N55Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.13mm

Brand :

IXYS

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Tradename :

HyperFET

Package / Case :

TO-264-3, TO-264AA

Turn-Off Delay Time :

57 ns

Subcategory :

MOSFETs

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Rds On Max :

88 mΩ

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-264AA

Power Dissipation (Max) :

735W (Tc)

Qualification Status :

Not Qualified

Configuration :

Single

Input Capacitance :

7.3 nF

Max Power Dissipation :

735 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

FET Feature :

--

Product Status :

Active

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

550V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

FET Type :

N-Channel

Resistance :

88mOhm

Turn-On Delay Time :

22 ns

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Package :

Tube

DS Breakdown Voltage-Min :

550 V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-264AA (IXFK)

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

60A

Mount :

Through Hole

Max Operating Temperature :

150 °C

Power Dissipation :

735W

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™

Min Operating Temperature :

-55 °C

Drain-source On Resistance-Max :

0.088 Ω

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

22 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Length :

19.96mm

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Rds On (Max) @ Id, Vgs :

88m Ω @ 30A, 10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Product Type :

MOSFET

Drain to Source Resistance :

88 mΩ

Base Product Number :

IXFK60

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Pbfree Code :

yes

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Power Dissipation-Max :

735W Tc

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Height :

26.16mm

Fall Time (Typ) :

9 ns

Mounting Style :

Through Hole

Rise Time :

14ns

Pin Count :

3

RoHS :

Compliant

Number of Pins :

3

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

550V

Avalanche Energy Rating (Eas) :

4000 mJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE