IXFK60N25Q
- Mfr.Part #
- IXFK60N25Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 60A TO264AA
- Stock
- 47,850
- In Stock :
- 47,850
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 250V
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 250 V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Power Dissipation :
- 360W
- Product Status :
- Obsolete
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Power Dissipation-Max (Abs) :
- 360 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-264
- Surface Mount :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Supplier Device Package :
- TO-264AA (IXFK)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFK60
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 80 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Power Dissipation-Max :
- 360W Tc
- Drain-source On Resistance-Max :
- 0.047Ohm
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 60A
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 60ns
- Package :
- Tube
- Fall Time (Typ) :
- 25 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Series :
- HiPerFET™
- Power Dissipation (Max) :
- 360W (Tc)
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 250V
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drain Current-Max (Abs) (ID) :
- 60 A
- Datasheets
- IXFK60N25Q

N-Channel Tube 47m Ω @ 500mA, 10V ±20V 5100pF @ 25V 180nC @ 10V 250V TO-264-3, TO-264AA
IXFK60N25Q Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5100pF @ 25V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.A device's drain current is its maximum continuous current, and this device's drain current is 60 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFK60N25Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)
IXFK60N25Q Applications
There are a lot of IXYS
IXFK60N25Q applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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