IXFK60N25Q

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Mfr.Part #
IXFK60N25Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 60A TO264AA
Stock
47,850
In Stock :
47,850

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
FET Feature :
--
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
250V
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
240A
Number of Pins :
3
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
250 V
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Power Dissipation :
360W
Product Status :
Obsolete
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Power Dissipation-Max (Abs) :
360 W
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
JEDEC-95 Code :
TO-264
Surface Mount :
No
Package / Case :
TO-264-3, TO-264AA
Supplier Device Package :
TO-264AA (IXFK)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFK60
Qualification Status :
Not Qualified
Turn-Off Delay Time :
80 ns
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3
Power Dissipation-Max :
360W Tc
Drain-source On Resistance-Max :
0.047Ohm
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Published :
2000
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
60A
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
60ns
Package :
Tube
Fall Time (Typ) :
25 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1500 mJ
Series :
HiPerFET™
Power Dissipation (Max) :
360W (Tc)
Element Configuration :
Single
Drain to Source Breakdown Voltage :
250V
Rds On (Max) @ Id, Vgs :
47m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
Drain Current-Max (Abs) (ID) :
60 A
Datasheets
IXFK60N25Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK60N25Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, IXFK60N25Q pinout, IXFK60N25Q datasheet PDF, IXFK60N25Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK60N25Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK60N25Q


N-Channel Tube 47m Ω @ 500mA, 10V ±20V 5100pF @ 25V 180nC @ 10V 250V TO-264-3, TO-264AA

IXFK60N25Q Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5100pF @ 25V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.A device's drain current is its maximum continuous current, and this device's drain current is 60 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK60N25Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)


IXFK60N25Q Applications


There are a lot of IXYS
IXFK60N25Q applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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