IXFK55N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Obsolete

Power Dissipation-Max :

625W Tc

Power Dissipation (Max) :

625W (Tc)

Package / Case :

TO-264-3, TO-264AA

Power Dissipation :

560W

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Radiation Hardening :

No

Resistance :

90mOhm

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Through Hole

Pin Count :

3

Continuous Drain Current (ID) :

55A

Gate to Source Voltage (Vgs) :

20V

Mounting Style :

Through Hole

Turn-Off Delay Time :

120 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

560 W

Transistor Type :

1 N-Channel

Surface Mount :

No

Current Rating :

55A

FET Feature :

--

Configuration :

Single

Element Configuration :

Single

Base Product Number :

IXFK55

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

220A

Rise Time :

60ns

Vgs (Max) :

±20V

Product Type :

MOSFET

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Series :

HiPerFET™

Number of Terminals :

3

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Packaging :

Tube

Mount :

Through Hole

RoHS :

Details

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Product Category :

MOSFET

Factory Lead Time :

8 Weeks

Published :

2004

Tradename :

HyperFET

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Brand :

IXYS

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

55 A

FET Type :

N-Channel

JEDEC-95 Code :

TO-264AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

Not Applicable

DS Breakdown Voltage-Min :

500 V

Fall Time (Typ) :

45 ns

Drain-source On Resistance-Max :

0.09 Ω

Number of Terminations :

3

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-264AA (IXFK)

Rds On (Max) @ Id, Vgs :

90m Ω @ 27.5A, 10V

Voltage - Rated DC :

500V