IXFK52N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

8.5 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.13mm

Supplier Device Package :

TO-264AA (IXFK)

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

208A

Manufacturer :

IXYS

Tradename :

HyperFET

Pbfree Code :

yes

Subcategory :

MOSFETs

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Series :

HiPerFET™

Package :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Product Category :

MOSFET

FET Feature :

--

Base Product Number :

IXFK52

Product Type :

MOSFET

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

30V

Published :

2003

Drain to Source Voltage (Vdss) :

600V

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mounting Style :

Through Hole

Number of Terminals :

3

Power Dissipation-Max :

735W Tc

Number of Pins :

3

Power Dissipation :

735W

Channel Mode :

Enhancement

Power Dissipation (Max) :

735W (Tc)

Rise Time :

13ns

Product Status :

Active

Height :

26.16mm

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600 V

Turn-Off Delay Time :

56 ns

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Avalanche Energy Rating (Eas) :

4000 mJ

JEDEC-95 Code :

TO-264AA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Mount :

Through Hole

Continuous Drain Current (ID) :

52A

Rds On (Max) @ Id, Vgs :

115m Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

0.115Ohm

Length :

19.96mm

Terminal Position :

Single

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

FET Type :

N-Channel

Turn On Delay Time :

23 ns

Brand :

IXYS

Package / Case :

TO-264-3, TO-264AA

JESD-609 Code :

e1

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details