IXFK52N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-264AA (IXFK)

Avalanche Energy Rating (Eas) :

4000 mJ

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Height :

26.16mm

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Pin Count :

3

Package / Case :

TO-264-3, TO-264AA

Package :

Tube

Product Type :

MOSFET

Subcategory :

MOSFETs

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Base Product Number :

IXFK52

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

208A

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Maximum Operating Temperature :

+ 150 C

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Series :

HiPerFET™

Width :

5.13mm

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

Product Category :

MOSFET

Manufacturer :

IXYS

Power Dissipation :

735W

Element Configuration :

Single

Power Dissipation (Max) :

735W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Tradename :

HyperFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

JEDEC-95 Code :

TO-264AA

Number of Channels :

1 Channel

Rise Time :

13ns

Brand :

IXYS

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

115m Ω @ 500mA, 10V

Fall Time (Typ) :

8.5 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

735W Tc

Mount :

Through Hole

Number of Pins :

3

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Drain-source On Resistance-Max :

0.115Ohm

Turn-Off Delay Time :

56 ns

Mounting Style :

Through Hole

Pbfree Code :

yes

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600 V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection :

DRAIN

Continuous Drain Current (ID) :

52A

Vgs (Max) :

±30V

Terminal Position :

Single

FET Feature :

--

Mounting Type :

Through Hole

Number of Terminals :

3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

30V

Product Status :

Active

Channel Mode :

Enhancement

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Published :

2003

Length :

19.96mm

Drain to Source Voltage (Vdss) :

600V