IXFK52N60Q2
- Mfr.Part #
- IXFK52N60Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 52A TO264AA
- Stock
- 1,659
- In Stock :
- 1,659
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Through Hole
- Turn On Delay Time :
- 23 ns
- Published :
- 2003
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5.13mm
- Pulsed Drain Current-Max (IDM) :
- 208A
- Base Product Number :
- IXFK52
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 500mA, 10V
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 8.5 ns
- Surface Mount :
- No
- Length :
- 19.96mm
- Series :
- HiPerFET™
- Rise Time :
- 13ns
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 56 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 52A
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Configuration :
- Single
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Subcategory :
- MOSFETs
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Drain to Source Breakdown Voltage :
- 600V
- Pin Count :
- 3
- Power Dissipation-Max :
- 735W Tc
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 600V
- Height :
- 26.16mm
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Supplier Device Package :
- TO-264AA (IXFK)
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 735W (Tc)
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 600 V
- Tradename :
- HyperFET
- Drain-source On Resistance-Max :
- 0.115Ohm
- Power Dissipation :
- 735W
- Gate Charge (Qg) (Max) @ Vgs :
- 198nC @ 10V
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-264AA
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Channel Mode :
- Enhancement
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-264-3, TO-264AA
- Datasheets
- IXFK52N60Q2

N-Channel Tube 115m Ω @ 500mA, 10V ±30V 6800pF @ 25V 198nC @ 10V 600V TO-264-3, TO-264AA
IXFK52N60Q2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6800pF @ 25V.This device conducts a continuous drain current (ID) of 52A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 56 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 208A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 23 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK52N60Q2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 208A.
a 600V drain to source voltage (Vdss)
IXFK52N60Q2 Applications
There are a lot of IXYS
IXFK52N60Q2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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