IXFK52N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.115Ohm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Power Dissipation (Max) :

735W (Tc)

JEDEC-95 Code :

TO-264AA

Product Type :

MOSFET

Power Dissipation-Max :

735W Tc

Element Configuration :

Single

DS Breakdown Voltage-Min :

600 V

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Brand :

IXYS

Width :

5.13mm

Package Shape :

RECTANGULAR

Height :

26.16mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Fall Time (Typ) :

8.5 ns

Number of Pins :

3

Base Product Number :

IXFK52

Power Dissipation :

735W

Vgs (Max) :

±30V

Terminal Form :

THROUGH-HOLE

Published :

2003

Rds On (Max) @ Id, Vgs :

115m Ω @ 500mA, 10V

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

52A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Through Hole

Product Category :

MOSFET

Mounting Style :

Through Hole

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

208A

Transistor Element Material :

SILICON

Terminal Position :

Single

Configuration :

Single

Tradename :

HyperFET

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Product Status :

Active

Number of Terminals :

3

Turn On Delay Time :

23 ns

Package / Case :

TO-264-3, TO-264AA

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

56 ns

Package :

Tube

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

4000 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Length :

19.96mm

Rise Time :

13ns

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Subcategory :

MOSFETs

JESD-609 Code :

e1

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Series :

HiPerFET™

Supplier Device Package :

TO-264AA (IXFK)

Maximum Operating Temperature :

+ 150 C