IXFK52N30Q
- Mfr.Part #
- IXFK52N30Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 52A TO264AA
- Stock
- 38,681
- In Stock :
- 38,681
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 360W
- RoHS Status :
- RoHS Compliant
- Package :
- Tube
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 300V
- Terminal Position :
- Single
- Pin Count :
- 3
- Product Status :
- Obsolete
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 300V
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.06Ohm
- Package / Case :
- TO-264-3, TO-264AA
- JEDEC-95 Code :
- TO-264
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Power Dissipation-Max :
- 360W Tc
- Manufacturer :
- IXYS Corporation
- Terminal Form :
- THROUGH-HOLE
- Fall Time (Typ) :
- 25 ns
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 52A
- Rise Time :
- 60ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 52 A
- Number of Pins :
- 3
- Published :
- 2000
- Base Product Number :
- IXFK52
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- DS Breakdown Voltage-Min :
- 300 V
- Pulsed Drain Current-Max (IDM) :
- 208A
- Power Dissipation (Max) :
- 360W (Tc)
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 80 ns
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 360 W
- Series :
- HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 500mA, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Datasheets
- IXFK52N30Q

N-Channel Tube 60m Ω @ 500mA, 10V ±20V 5300pF @ 25V 150nC @ 10V 300V TO-264-3, TO-264AA
IXFK52N30Q Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 52A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 52 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 208A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK52N30Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 208A.
a 300V drain to source voltage (Vdss)
IXFK52N30Q Applications
There are a lot of IXYS
IXFK52N30Q applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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