IXFK52N30Q

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Mfr.Part #
IXFK52N30Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 52A TO264AA
Stock
38,681
In Stock :
38,681

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
RoHS Compliant
FET Feature :
--
Mounting Type :
Through Hole
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Terminal Position :
Single
Drain-source On Resistance-Max :
0.06Ohm
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
360 W
Turn-Off Delay Time :
80 ns
Mount :
Through Hole
Pbfree Code :
yes
Power Dissipation-Max :
360W Tc
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
1500 mJ
Published :
2000
Drain to Source Voltage (Vdss) :
300V
Rds On (Max) @ Id, Vgs :
60m Ω @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Supplier Device Package :
TO-264AA (IXFK)
Pulsed Drain Current-Max (IDM) :
208A
Power Dissipation :
360W
Product Status :
Obsolete
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-264-3, TO-264AA
Rise Time :
60ns
Base Product Number :
IXFK52
Vgs(th) (Max) @ Id :
4V @ 4mA
Packaging :
Tube
Series :
HiPerFET™
Surface Mount :
No
Package :
Tube
Number of Terminals :
3
FET Type :
N-Channel
Continuous Drain Current (ID) :
52A
JEDEC-95 Code :
TO-264
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 25V
Power Dissipation (Max) :
360W (Tc)
Fall Time (Typ) :
25 ns
Manufacturer :
IXYS Corporation
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
52 A
Reach Compliance Code :
Compliant
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
300V
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
DS Breakdown Voltage-Min :
300 V
Datasheets
IXFK52N30Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK52N30Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFK52N30Q pinout, IXFK52N30Q datasheet PDF, IXFK52N30Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK52N30Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK52N30Q


N-Channel Tube 60m Ω @ 500mA, 10V ±20V 5300pF @ 25V 150nC @ 10V 300V TO-264-3, TO-264AA

IXFK52N30Q Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 52A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=300V. And this device has 300V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 52 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 208A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300 V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK52N30Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 208A.
a 300V drain to source voltage (Vdss)


IXFK52N30Q Applications


There are a lot of IXYS
IXFK52N30Q applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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