IXFK520N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

520A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Width :

5.31 mm

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mounting Type :

Through Hole

Max Power Dissipation :

1.25 kW

Factory Lead Time :

30 Weeks

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0022Ohm

Length :

20.29 mm

Number of Terminations :

3

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

5V @ 8mA

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 100A, 10V

Product Status :

Active

FET Feature :

--

Packaging :

Tube

RoHS :

Details

Vgs (Max) :

±20V

Terminal Position :

Single

Number of Channels :

1 Channel

Package :

Tube

Supplier Device Package :

TO-264AA (IXFK)

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max :

1250W Tc

Pulsed Drain Current-Max (IDM) :

1350A

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

GigaMOS™, TrenchT2™

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Channel Mode :

Enhancement

Rise Time :

36 ns

Power Dissipation (Max) :

1250W (Tc)

Mounting Style :

Through Hole

Published :

2009

Base Product Number :

IXFK520

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

545nC @ 10V

Rds On Max :

2.2 MΩ

Current - Continuous Drain (Id) @ 25°C :

520A Tc

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

75V

Maximum Operating Temperature :

+ 175 C

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Number of Elements :

1

Type :

TrenchT2 GigaMOS HiperFET Power MOSFET

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

41000pF @ 25V

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Input Capacitance :

41 nF

Height :

26.59 mm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

75V