IXFK50N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

200A

Mount :

Through Hole

Brand :

IXYS

Product Category :

MOSFET

Series :

HiPerFET™

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

50A

Drain Current-Max (Abs) (ID) :

50 A

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

120 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Length :

19.96 mm

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.1 Ω

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Package / Case :

TO-264-3, TO-264AA

JEDEC-95 Code :

TO-264AA

Height :

26.16 mm

Transistor Type :

1 N-Channel

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Fall Time (Typ) :

45 ns

Rise Time :

60ns

Maximum Operating Temperature :

+ 150 C

Tradename :

HyperFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Base Product Number :

IXFK50

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-264AA (IXFK)

Gate to Source Voltage (Vgs) :

20V

Product Status :

Not For New Designs

Configuration :

Single

Transistor Polarity :

N-Channel

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

Surface Mount :

No

Published :

2003

Rds On (Max) @ Id, Vgs :

80m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

560W Tc

Pin Count :

3

DS Breakdown Voltage-Min :

500 V

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Element Configuration :

Single

Mounting Style :

Through Hole

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Power Dissipation-Max (Abs) :

560 W

Manufacturer :

IXYS

Product Type :

MOSFET

Number of Channels :

1 Channel

Power Dissipation :

560W

Drain to Source Breakdown Voltage :

500V

RoHS :

Details

Packaging :

Tube

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Resistance :

100MOhm

Width :

5.13 mm

Power Dissipation (Max) :

560W (Tc)