IXFK48N60Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Surface Mount :

No

Transistor Polarity :

N-Channel

Element Configuration :

Single

Number of Elements per Chip :

1

Supplier Device Package :

TO-264AA (IXFK)

Package :

Tube

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

300ns

Height :

26.16mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

40 ns

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Reach Compliance Code :

Unknown

Manufacturer :

IXYS

RoHS :

Details

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-264AA

Series :

HiPerFET™

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

120A

Mount :

Through Hole

Drain-source On Resistance-Max :

0.14Ohm

Base Product Number :

IXFK48

Number of Terminals :

3

Number of Elements :

1

Turn On Delay Time :

37 ns

Maximum Operating Temperature :

+150 °C

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Minimum Operating Temperature :

-55 °C

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Width :

5.13mm

Terminal Position :

Single

Power Dissipation (Max) :

1000W (Tc)

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Continuous Drain Current (ID) :

48A

Power Dissipation-Max (Abs) :

1000 W

Power Dissipation :

1kW

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Product Category :

MOSFET

Length :

19.96mm

Number of Channels :

1 Channel

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

48 A

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Power Dissipation-Max :

1000W Tc

Avalanche Energy Rating (Eas) :

2000 mJ

Package / Case :

TO-264-3, TO-264AA

Drain to Source Voltage (Vdss) :

600V

Package Type :

TO-264

Gate to Source Voltage (Vgs) :

30V

Mounting Style :

Through Hole

Packaging :

Tube

Tradename :

HiPerFET

DS Breakdown Voltage-Min :

600 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Package Shape :

RECTANGULAR

Factory Lead Time :

30 Weeks

FET Feature :

--

Product Status :

Active

Channel Type :

N

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Published :

2011

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

140m Ω @ 24A, 10V