IXFK48N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

830W (Tc)

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Package :

Tube

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Rds On (Max) @ Id, Vgs :

135m Ω @ 500mA, 10V

Terminal Form :

THROUGH-HOLE

Series :

HiPerFET™, PolarHT™

FET Feature :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Subcategory :

MOSFETs

Pbfree Code :

yes

Height :

26.16 mm

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Width :

5.13 mm

Input Capacitance (Ciss) (Max) @ Vds :

8860pF @ 25V

Drain-source On Resistance-Max :

0.135 Ω

JESD-609 Code :

e1

Continuous Drain Current (ID) :

48A

Transistor Type :

1 N-Channel

Current Rating :

48A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

JEDEC-95 Code :

TO-264AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

Avalanche Energy Rating (Eas) :

2000 mJ

Mounting Type :

Through Hole

Fall Time (Typ) :

22 ns

Manufacturer :

IXYS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

3

Product Type :

MOSFET

Brand :

IXYS

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Element Configuration :

Single

Base Product Number :

IXFK48

Packaging :

Tube

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Power Dissipation-Max :

830W Tc

Terminal Position :

Single

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

85 ns

Surface Mount :

No

Length :

19.96 mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

830W

RoHS :

Details

Published :

2006

Configuration :

Single

Rise Time :

25ns

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Threshold Voltage :

5V

Number of Elements :

1

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

110A

Product Category :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-264AA (IXFK)

FET Type :

N-Channel

Pin Count :

3

Mount :

Through Hole

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

600 V

Vgs(th) (Max) @ Id :

5V @ 8mA

Qualification Status :

Not Qualified

Number of Terminations :

3