IXFK48N55
- Mfr.Part #
- IXFK48N55
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 48A TO264AA
- Stock
- 22,269
- In Stock :
- 22,269
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 560W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.11Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 550V
- Number of Elements :
- 1
- Package / Case :
- TO-264-3, TO-264AA
- Manufacturer :
- IXYS Corporation
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Published :
- 2000
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Package :
- Tube
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 560W Tc
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 192A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- DS Breakdown Voltage-Min :
- 550V
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 24A, 10V
- JESD-30 Code :
- R-PSFM-T3
- Series :
- HiPerFET™
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- Product Status :
- Obsolete
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 8900pF @ 25V
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-264
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 48A
- Base Product Number :
- IXFK48
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFK48N55

N-Channel Tube 110m Ω @ 24A, 10V ±20V 8900pF @ 25V 330nC @ 10V 550V TO-264-3, TO-264AA
IXFK48N55 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 48A continuous drain current (ID).Peak drain current is 192A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 550V.For this transistor to work, a voltage 550V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFK48N55 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 48A
based on its rated peak drain current 192A.
a 550V drain to source voltage (Vdss)
IXFK48N55 Applications
There are a lot of IXYS
IXFK48N55 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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