IXFK48N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

75 ns

Drain-source On Resistance-Max :

0.1 Ω

Surface Mount :

No

Power Dissipation (Max) :

500W (Tc)

Base Product Number :

IXFK48

FET Type :

N-Channel

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

48A

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Element Configuration :

Single

Tradename :

HiPerFET

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500 V

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 4mA

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Subcategory :

MOSFETs

JEDEC-95 Code :

TO-264AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 24A, 10V

Supplier Device Package :

TO-264AA (IXFK)

Packaging :

Tube

Mount :

Through Hole

Power Dissipation :

500W

Turn On Delay Time :

33 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Power Dissipation-Max :

500W Tc

Gate to Source Voltage (Vgs) :

20V

Product Status :

Active

Transistor Polarity :

N-Channel

Resistance :

100MOhm

RoHS :

Details

Manufacturer :

IXYS

Number of Terminations :

3

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Transistor Type :

1 N-Channel

Brand :

IXYS

FET Feature :

--

Reach Compliance Code :

Compliant

Width :

5.13mm

Package :

Tube

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Rise Time :

22ns

Pulsed Drain Current-Max (IDM) :

192A

Product Category :

MOSFET

Height :

26.16mm

Published :

2003

Fall Time (Typ) :

10 ns

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Terminals :

3

Length :

19.96mm

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR