IXFK48N50
- Mfr.Part #
- IXFK48N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 48A TO264AA
- Stock
- 3,761
- In Stock :
- 3,761
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Power Dissipation :
- 500W
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.1 Ω
- Brand :
- IXYS
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- Package / Case :
- TO-264-3, TO-264AA
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 48A
- Product Type :
- MOSFET
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- FET Feature :
- --
- Product Category :
- MOSFET
- Turn On Delay Time :
- 33 ns
- Drain to Source Breakdown Voltage :
- 500V
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Resistance :
- 100MOhm
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 500 V
- Pulsed Drain Current-Max (IDM) :
- 192A
- Tradename :
- HiPerFET
- Length :
- 19.96mm
- Series :
- HiPerFET™
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Rise Time :
- 22ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation-Max :
- 500W Tc
- Published :
- 2003
- Subcategory :
- MOSFETs
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 24A, 10V
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXFK48
- JEDEC-95 Code :
- TO-264AA
- Height :
- 26.16mm
- Pin Count :
- 3
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 75 ns
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 500W (Tc)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 10 ns
- Width :
- 5.13mm
- Vgs (Max) :
- ±20V
- Datasheets
- IXFK48N50

N-Channel Tube 100m Ω @ 24A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-264-3, TO-264AA
IXFK48N50Q Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 7000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 48A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 192A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 33 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK48N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFK48N50Q Applications
There are a lot of IXYS
IXFK48N50Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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