IXFK44N80Q3

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Mfr.Part #
IXFK44N80Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 44A TO264AA
Stock
5,427
In Stock :
5,427

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Package / Case :
TO-264-3, TO-264AA
Tradename :
HiPerFET
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-264AA (IXFK)
Transistor Polarity :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Height :
26.16mm
Published :
2012
DS Breakdown Voltage-Min :
800 V
Gate to Source Voltage (Vgs) :
30V
Manufacturer :
IXYS
Series :
HiPerFET™
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
9840pF @ 25V
Reach Compliance Code :
Unknown
Mount :
Through Hole
Product Status :
Active
RoHS :
Details
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Drain to Source Breakdown Voltage :
800V
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
44 A
Turn On Delay Time :
45 ns
Maximum Operating Temperature :
+ 150 C
Pin Count :
3
Vgs(th) (Max) @ Id :
6.5V @ 8mA
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Power Dissipation :
1.25kW
Mounting Type :
Through Hole
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
800V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
Rise Time :
300ns
Rds On (Max) @ Id, Vgs :
190m Ω @ 22A, 10V
Mounting Style :
Through Hole
Brand :
IXYS
Pulsed Drain Current-Max (IDM) :
130 A
Avalanche Energy Rating (Eas) :
3500 mJ
JESD-30 Code :
R-PSFM-T3
Base Product Number :
IXFK44
Number of Terminations :
3
Drain-source On Resistance-Max :
0.19Ohm
Transistor Element Material :
SILICON
Configuration :
Single
Width :
5.13mm
Continuous Drain Current (ID) :
44A
Case Connection :
DRAIN
Power Dissipation-Max :
1250W Tc
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
JEDEC-95 Code :
TO-264AA
Length :
19.96mm
Turn-Off Delay Time :
63 ns
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Factory Lead Time :
30 Weeks
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Packaging :
Tube
Power Dissipation-Max (Abs) :
1250 W
FET Type :
N-Channel
Power Dissipation (Max) :
1250W (Tc)
Number of Terminals :
3
Number of Channels :
1 Channel
Datasheets
IXFK44N80Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N80Q3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFK44N80Q3 pinout, IXFK44N80Q3 datasheet PDF, IXFK44N80Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N80Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N80Q3


N-Channel Tube 190m Ω @ 22A, 10V ±30V 9840pF @ 25V 185nC @ 10V 800V TO-264-3, TO-264AA

IXFK44N80Q3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.The maximum input capacitance of this device is 9840pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 44 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 63 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 130 A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 45 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N80Q3 Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 130 A.
a 800V drain to source voltage (Vdss)


IXFK44N80Q3 Applications


There are a lot of IXYS
IXFK44N80Q3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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