IXFK44N80Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Through Hole

Turn-Off Delay Time :

63 ns

Terminal Position :

Single

Turn On Delay Time :

45 ns

FET Feature :

--

DS Breakdown Voltage-Min :

800 V

Transistor Polarity :

N-Channel

Number of Terminations :

3

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

1250W (Tc)

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.19Ohm

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Length :

19.96mm

Series :

HiPerFET™

Number of Elements :

1

JEDEC-95 Code :

TO-264AA

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1250W Tc

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

3500 mJ

Power Dissipation-Max (Abs) :

1250 W

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

190m Ω @ 22A, 10V

Rise Time :

300ns

Manufacturer :

IXYS

Continuous Drain Current (ID) :

44A

Drain to Source Breakdown Voltage :

800V

Width :

5.13mm

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±30V

Number of Channels :

1 Channel

Number of Terminals :

3

Mounting Style :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-264AA (IXFK)

Channel Mode :

Enhancement

Base Product Number :

IXFK44

Package / Case :

TO-264-3, TO-264AA

Product Category :

MOSFET

Package :

Tube

Drain Current-Max (Abs) (ID) :

44 A

Case Connection :

DRAIN

Element Configuration :

Single

Product Status :

Active

Height :

26.16mm

Transistor Application :

SWITCHING

Brand :

IXYS

Packaging :

Tube

Surface Mount :

No

Power Dissipation :

1.25kW

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

130 A

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HiPerFET

RoHS :

Details

Drain to Source Voltage (Vdss) :

800V

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

9840pF @ 25V

Polarity/Channel Type :

N-Channel