IXFK44N80Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Power Dissipation-Max (Abs) :

1250 W

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-264-3, TO-264AA

Tradename :

HiPerFET

Transistor Type :

1 N-Channel

Published :

2012

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

9840pF @ 25V

Power Dissipation-Max :

1250W Tc

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-264AA (IXFK)

Power Dissipation :

1.25kW

Mount :

Through Hole

JEDEC-95 Code :

TO-264AA

Element Configuration :

Single

Surface Mount :

No

Manufacturer :

IXYS

Power Dissipation (Max) :

1250W (Tc)

Base Product Number :

IXFK44

Package :

Tube

RoHS Status :

ROHS3 Compliant

Rise Time :

300ns

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Product Status :

Active

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Drain to Source Voltage (Vdss) :

800V

Avalanche Energy Rating (Eas) :

3500 mJ

Pin Count :

3

Product Type :

MOSFET

Product Category :

MOSFET

Width :

5.13mm

Polarity/Channel Type :

N-Channel

Turn On Delay Time :

45 ns

Channel Mode :

Enhancement

FET Feature :

--

Continuous Drain Current (ID) :

44A

Number of Terminations :

3

Drain-source On Resistance-Max :

0.19Ohm

Package Shape :

RECTANGULAR

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

190m Ω @ 22A, 10V

Drain Current-Max (Abs) (ID) :

44 A

Number of Terminals :

3

Series :

HiPerFET™

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Factory Lead Time :

30 Weeks

Length :

19.96mm

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Height :

26.16mm

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

130 A

DS Breakdown Voltage-Min :

800 V

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

63 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Drain to Source Breakdown Voltage :

800V

FET Type :

N-Channel