IXFK44N80P

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Mfr.Part #
IXFK44N80P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 44A TO264AA
Stock
600
In Stock :
600

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.19 Ω
Number of Terminations :
3
Length :
19.96 mm
Element Configuration :
Single
Pin Count :
3
Maximum Operating Temperature :
+ 150 C
Mount :
Through Hole
Threshold Voltage :
5V
Brand :
IXYS
Published :
2006
Terminal Form :
THROUGH-HOLE
Channel Mode :
Enhancement
Max Power Dissipation :
1.04 kW
Series :
HiPerFET™, PolarHT™
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Continuous Drain Current Id :
44A
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Drain to Source Resistance :
190 mΩ
Rds On Max :
190 mΩ
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
30V
Avalanche Energy Rating (Eas) :
3400 mJ
Power Dissipation (Max) :
1040W (Tc)
Surface Mount :
No
Drain to Source Breakdown Voltage :
800V
Input Capacitance :
12 nF
Fall Time (Typ) :
27 ns
Product Status :
Active
Supplier Device Package :
TO-264AA (IXFK)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
Mounting Style :
Through Hole
Qualification :
-
Height :
26.16 mm
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Terminal Position :
Single
Reach Compliance Code :
Compliant
JESD-609 Code :
e1
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Number of Channels :
1 Channel
Configuration :
Single
DS Breakdown Voltage-Min :
800 V
Power Dissipation-Max :
1040W Tc
Tradename :
HiPerFET
RoHS :
Details
Number of Elements :
1
Package / Case :
TO-264-3, TO-264AA
Vgs(th) (Max) @ Id :
5V @ 8mA
Base Product Number :
IXFK44
Max Operating Temperature :
150 °C
Min Operating Temperature :
-55 °C
Pbfree Code :
yes
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
800V
Number of Pins :
3
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Rise Time :
22ns
MSL :
-
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Continuous Drain Current (ID) :
44A
Subcategory :
MOSFETs
JESD-30 Code :
R-PSFM-T3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Product Category :
MOSFET
JEDEC-95 Code :
TO-264AA
Power Dissipation :
1.04kW
Turn-Off Delay Time :
75 ns
Vgs (Max) :
±30V
Additional Feature :
AVALANCHE RATED
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Width :
5.13 mm
Channel Type :
N Channel
Factory Lead Time :
30 Weeks
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
100 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
190m Ω @ 22A, 10V
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Resistance :
190mOhm
Datasheets
IXFK44N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, IXFK44N80P pinout, IXFK44N80P datasheet PDF, IXFK44N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N80P


N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V 800V TO-264-3, TO-264AA

IXFK44N80P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 190 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK44N80P Features


the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100 A.
single MOSFETs transistor is 190 mΩ
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)


IXFK44N80P Applications


There are a lot of IXYS
IXFK44N80P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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