IXFK44N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Power Dissipation :

1.04kW

Reach Compliance Code :

Compliant

Package / Case :

TO-264-3, TO-264AA

Gate to Source Voltage (Vgs) :

30V

Input Capacitance :

12 nF

Fall Time (Typ) :

27 ns

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.19 Ω

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Rise Time :

22ns

Subcategory :

MOSFETs

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

44A

Power Dissipation-Max :

1040W Tc

Number of Elements :

1

JESD-609 Code :

e1

Factory Lead Time :

30 Weeks

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Qualification :

-

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

1.04 kW

Maximum Operating Temperature :

+ 150 C

Surface Mount :

No

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

100 A

Number of Terminations :

3

Published :

2006

Max Operating Temperature :

150 °C

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

75 ns

REACH SVHC :

No SVHC

Product Category :

MOSFET

Number of Pins :

3

Number of Terminals :

3

DS Breakdown Voltage-Min :

800 V

Supplier Device Package :

TO-264AA (IXFK)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Product Status :

Active

Drain to Source Voltage (Vdss) :

800V

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Drain to Source Resistance :

190 mΩ

Rds On Max :

190 mΩ

Configuration :

Single

Threshold Voltage :

5V

Base Product Number :

IXFK44

Avalanche Energy Rating (Eas) :

3400 mJ

Qualification Status :

Not Qualified

Series :

HiPerFET™, PolarHT™

FET Feature :

--

Element Configuration :

Single

Min Operating Temperature :

-55 °C

Width :

5.13 mm

Height :

26.16 mm

RoHS :

Details

Brand :

IXYS

Transistor Type :

1 N-Channel

Resistance :

190mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

FET Type :

N-Channel

JEDEC-95 Code :

TO-264AA

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5V @ 8mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Length :

19.96 mm

Product Type :

MOSFET

Radiation Hardening :

No

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Case Connection :

DRAIN

Lead Free :

Lead Free

Continuous Drain Current Id :

44A

Rds On (Max) @ Id, Vgs :

190m Ω @ 22A, 10V

MSL :

-

Power Dissipation (Max) :

1040W (Tc)

Channel Type :

N Channel

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

800V