IXFK44N80P
- Mfr.Part #
- IXFK44N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A TO264AA
- Stock
- 600
- In Stock :
- 600
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Power Dissipation-Max :
- 1040W Tc
- Surface Mount :
- No
- Channel Type :
- N Channel
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Published :
- 2006
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 800V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Width :
- 5.13 mm
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- TO-264AA (IXFK)
- Base Product Number :
- IXFK44
- Product Type :
- MOSFET
- Qualification :
- -
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 1.04kW
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Brand :
- IXYS
- Height :
- 26.16 mm
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Rds On Max :
- 190 mΩ
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Max Power Dissipation :
- 1.04 kW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Breakdown Voltage :
- 800V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 44A
- FET Feature :
- --
- Tradename :
- HiPerFET
- Vgs (Max) :
- ±30V
- DS Breakdown Voltage-Min :
- 800 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 30 Weeks
- Transistor Element Material :
- SILICON
- Max Operating Temperature :
- 150 °C
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 1040W (Tc)
- Min Operating Temperature :
- -55 °C
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 3400 mJ
- Fall Time (Typ) :
- 27 ns
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Terminal Position :
- Single
- Series :
- HiPerFET™, PolarHT™
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 5V
- Turn-Off Delay Time :
- 75 ns
- Length :
- 19.96 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 22A, 10V
- Number of Terminals :
- 3
- Input Capacitance :
- 12 nF
- Continuous Drain Current Id :
- 44A
- Drain-source On Resistance-Max :
- 0.19 Ω
- Element Configuration :
- Single
- Rise Time :
- 22ns
- Configuration :
- Single
- Resistance :
- 190mOhm
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- JEDEC-95 Code :
- TO-264AA
- Gate Charge (Qg) (Max) @ Vgs :
- 198nC @ 10V
- Subcategory :
- MOSFETs
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 100 A
- MSL :
- -
- Product Status :
- Active
- Drain to Source Resistance :
- 190 mΩ
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Datasheets
- IXFK44N80P

N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V 800V TO-264-3, TO-264AA
IXFK44N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 190 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK44N80P Features
the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100 A.
single MOSFETs transistor is 190 mΩ
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)
IXFK44N80P Applications
There are a lot of IXYS
IXFK44N80P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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