IXFK44N55Q

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Mfr.Part #
IXFK44N55Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 550V 44A TO264AA
Stock
37,383
In Stock :
37,383

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFK44
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
3
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 4mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
2500 mJ
Product Status :
Active
Supplier Device Package :
TO-264AA (IXFK)
Turn-Off Delay Time :
75 ns
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
550V
Transistor Element Material :
SILICON
Turn On Delay Time :
30 ns
DS Breakdown Voltage-Min :
550 V
Vgs (Max) :
±20V
Packaging :
Bulk
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
6400pF @ 25V
Continuous Drain Current (ID) :
44A
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Width :
5.13mm
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
176A
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Mount :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
FET Type :
N-Channel
Series :
HiPerFET™
Power Dissipation :
500W
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-264AA
Rise Time :
20ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
550V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
26.16mm
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
500W Tc
Manufacturer :
IXYS Corporation
Package :
Box
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Element Configuration :
Single
Package Shape :
RECTANGULAR
Package / Case :
TO-264-3, TO-264AA
Published :
2002
Pbfree Code :
yes
Length :
19.96mm
Power Dissipation (Max) :
500W (Tc)
Transistor Application :
SWITCHING
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Fall Time (Typ) :
10 ns
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.12Ohm
Number of Pins :
3
Datasheets
IXFK44N55Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N55Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, IXFK44N55Q pinout, IXFK44N55Q datasheet PDF, IXFK44N55Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N55Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N55Q


N-Channel Bulk 120m Ω @ 22A, 10V ±20V 6400pF @ 25V 190nC @ 10V 550V TO-264-3, TO-264AA

IXFK44N55Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 6400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=550V, and this device has a drain-to-source breakdown voltage of 550V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 176A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 550 V.To operate this transistor, you need to apply a 550V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK44N55Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 550V drain to source voltage (Vdss)


IXFK44N55Q Applications


There are a lot of IXYS
IXFK44N55Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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