IXFK44N55Q

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Mfr.Part #
IXFK44N55Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 550V 44A TO264AA
Stock
37,383
In Stock :
37,383

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFK44
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
500W
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Fall Time (Typ) :
10 ns
Package Shape :
RECTANGULAR
Published :
2002
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
75 ns
Power Dissipation (Max) :
500W (Tc)
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Package :
Box
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Supplier Device Package :
TO-264AA (IXFK)
Drain to Source Breakdown Voltage :
550V
Product Status :
Active
Transistor Application :
SWITCHING
Series :
HiPerFET™
Length :
19.96mm
Pin Count :
3
Manufacturer :
IXYS Corporation
RoHS Status :
ROHS3 Compliant
Rise Time :
20ns
Continuous Drain Current (ID) :
44A
Drain to Source Voltage (Vdss) :
550V
JEDEC-95 Code :
TO-264AA
Vgs (Max) :
±20V
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Package / Case :
TO-264-3, TO-264AA
Number of Elements :
1
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn On Delay Time :
30 ns
Height :
26.16mm
Configuration :
SINGLE WITH BUILT-IN DIODE
Width :
5.13mm
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
2500 mJ
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
6400pF @ 25V
DS Breakdown Voltage-Min :
550 V
Pulsed Drain Current-Max (IDM) :
176A
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Mount :
Through Hole
Number of Terminations :
3
Terminal Position :
Single
Power Dissipation-Max :
500W Tc
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Surface Mount :
No
Drain-source On Resistance-Max :
0.12Ohm
Terminal Form :
THROUGH-HOLE
Packaging :
Bulk
Mounting Type :
Through Hole
FET Feature :
--
Datasheets
IXFK44N55Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N55Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFK44N55Q pinout, IXFK44N55Q datasheet PDF, IXFK44N55Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N55Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N55Q


N-Channel Bulk 120m Ω @ 22A, 10V ±20V 6400pF @ 25V 190nC @ 10V 550V TO-264-3, TO-264AA

IXFK44N55Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 6400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=550V, and this device has a drain-to-source breakdown voltage of 550V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 176A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 550 V.To operate this transistor, you need to apply a 550V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK44N55Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 550V drain to source voltage (Vdss)


IXFK44N55Q Applications


There are a lot of IXYS
IXFK44N55Q applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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