IXFK44N55Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Additional Feature :

AVALANCHE RATED

FET Feature :

--

Reach Compliance Code :

Compliant

Package :

Box

Continuous Drain Current (ID) :

44A

Turn-Off Delay Time :

75 ns

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

550V

Avalanche Energy Rating (Eas) :

2500 mJ

Width :

5.13mm

Terminal Position :

Single

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Series :

HiPerFET™

JEDEC-95 Code :

TO-264AA

Base Product Number :

IXFK44

Rise Time :

20ns

Drain to Source Voltage (Vdss) :

550V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Manufacturer :

IXYS Corporation

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Gate to Source Voltage (Vgs) :

20V

Length :

19.96mm

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.12Ohm

Vgs (Max) :

±20V

Number of Pins :

3

Package Shape :

RECTANGULAR

Number of Terminations :

3

DS Breakdown Voltage-Min :

550 V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Pulsed Drain Current-Max (IDM) :

176A

Power Dissipation :

500W

Power Dissipation (Max) :

500W (Tc)

Product Status :

Active

Supplier Device Package :

TO-264AA (IXFK)

Pin Count :

3

Case Connection :

DRAIN

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Height :

26.16mm

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

500W Tc

Rds On (Max) @ Id, Vgs :

120m Ω @ 22A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V