IXFK44N55Q
- Mfr.Part #
- IXFK44N55Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 44A TO264AA
- Stock
- 37,383
- In Stock :
- 37,383
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFK44
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 500W
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Fall Time (Typ) :
- 10 ns
- Package Shape :
- RECTANGULAR
- Published :
- 2002
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation (Max) :
- 500W (Tc)
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Package :
- Box
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Supplier Device Package :
- TO-264AA (IXFK)
- Drain to Source Breakdown Voltage :
- 550V
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™
- Length :
- 19.96mm
- Pin Count :
- 3
- Manufacturer :
- IXYS Corporation
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 20ns
- Continuous Drain Current (ID) :
- 44A
- Drain to Source Voltage (Vdss) :
- 550V
- JEDEC-95 Code :
- TO-264AA
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Package / Case :
- TO-264-3, TO-264AA
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 30 ns
- Height :
- 26.16mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Width :
- 5.13mm
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6400pF @ 25V
- DS Breakdown Voltage-Min :
- 550 V
- Pulsed Drain Current-Max (IDM) :
- 176A
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Power Dissipation-Max :
- 500W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.12Ohm
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- FET Feature :
- --
- Datasheets
- IXFK44N55Q

N-Channel Bulk 120m Ω @ 22A, 10V ±20V 6400pF @ 25V 190nC @ 10V 550V TO-264-3, TO-264AA
IXFK44N55Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 6400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=550V, and this device has a drain-to-source breakdown voltage of 550V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 176A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 550 V.To operate this transistor, you need to apply a 550V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK44N55Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 550V drain to source voltage (Vdss)
IXFK44N55Q Applications
There are a lot of IXYS
IXFK44N55Q applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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