IXFK44N50Q

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Mfr.Part #
IXFK44N50Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264AA
Stock
10,506
In Stock :
10,506

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.12Ohm
Package / Case :
TO-264-3, TO-264AA
Power Dissipation (Max) :
500W (Tc)
Fall Time (Typ) :
10 ns
Mount :
Through Hole
Published :
2002
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Manufacturer :
IXYS
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
500W Tc
Turn-Off Delay Time :
75 ns
Terminal Position :
Single
Maximum Operating Temperature :
+ 150 C
Channel Mode :
Enhancement
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
500V
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
JEDEC-95 Code :
TO-264AA
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Mounting Style :
Through Hole
Power Dissipation :
500W
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
176A
Package :
Tube
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Series :
HiPerFET™
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
RoHS :
Details
Width :
5.13 mm
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Subcategory :
MOSFETs
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Number of Terminations :
3
Length :
19.96 mm
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Rise Time :
22ns
Avalanche Energy Rating (Eas) :
2500 mJ
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Continuous Drain Current (ID) :
44A
DS Breakdown Voltage-Min :
500 V
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFK44
Number of Pins :
3
Height :
26.16 mm
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Product Status :
Active
Pin Count :
3
Tradename :
HiPerFET
Product Category :
MOSFET
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
500V
Supplier Device Package :
TO-264AA (IXFK)
Packaging :
Tube
Datasheets
IXFK44N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, IXFK44N50Q pinout, IXFK44N50Q datasheet PDF, IXFK44N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50Q


N-Channel Tube 120m Ω @ 22A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 176A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK44N50Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)


IXFK44N50Q Applications


There are a lot of IXYS
IXFK44N50Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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