IXFK44N50Q
- Mfr.Part #
- IXFK44N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264AA
- Stock
- 10,506
- In Stock :
- 10,506
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.12Ohm
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation (Max) :
- 500W (Tc)
- Fall Time (Typ) :
- 10 ns
- Mount :
- Through Hole
- Published :
- 2002
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 500W Tc
- Turn-Off Delay Time :
- 75 ns
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- JEDEC-95 Code :
- TO-264AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Mounting Style :
- Through Hole
- Power Dissipation :
- 500W
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 176A
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Series :
- HiPerFET™
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- RoHS :
- Details
- Width :
- 5.13 mm
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Length :
- 19.96 mm
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Rise Time :
- 22ns
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 44A
- DS Breakdown Voltage-Min :
- 500 V
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFK44
- Number of Pins :
- 3
- Height :
- 26.16 mm
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Product Status :
- Active
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- TO-264AA (IXFK)
- Packaging :
- Tube
- Datasheets
- IXFK44N50Q

N-Channel Tube 120m Ω @ 22A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50Q Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 176A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK44N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 176A.
a 500V drain to source voltage (Vdss)
IXFK44N50Q Applications
There are a lot of IXYS
IXFK44N50Q applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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