IXFK44N50P
- Mfr.Part #
- IXFK44N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264AA
- Stock
- 16,199
- In Stock :
- 16,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Current Rating :
- 44A
- Drain-source On Resistance-Max :
- 0.14 Ω
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation :
- 650W
- Series :
- HiPerFET™, PolarHT™
- Number of Elements :
- 1
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 44A
- Height :
- 26.16 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 658W (Tc)
- Mount :
- Through Hole
- Continuous Drain Current Id :
- 44A
- Pulsed Drain Current-Max (IDM) :
- 110A
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Qualification :
- -
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Factory Lead Time :
- 30 Weeks
- Subcategory :
- MOSFETs
- Vgs (Max) :
- ±30V
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 658W Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Resistance :
- 140mOhm
- FET Feature :
- --
- Manufacturer :
- IXYS
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Tube
- Product Type :
- MOSFET
- Voltage - Rated DC :
- 500V
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 29ns
- Drain to Source Voltage (Vdss) :
- 500V
- Brand :
- IXYS
- Fall Time (Typ) :
- 27 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Element Configuration :
- Single
- Width :
- 5.13 mm
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 85 ns
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXFK44
- Drain to Source Breakdown Voltage :
- 500V
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Published :
- 2006
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Length :
- 19.96 mm
- Channel Type :
- N Channel
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-264AA
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- DS Breakdown Voltage-Min :
- 500 V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Product Status :
- Active
- Datasheets
- IXFK44N50P

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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