IXFK44N50P
- Mfr.Part #
- IXFK44N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264AA
- Stock
- 16,199
- In Stock :
- 16,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Power Dissipation :
- 650W
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Type :
- 1 N-Channel
- Width :
- 5.13 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current Id :
- 44A
- Qualification :
- -
- FET Type :
- N-Channel
- Brand :
- IXYS
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 44A
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 110A
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 85 ns
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™, PolarHT™
- Continuous Drain Current (ID) :
- 44A
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 658W Tc
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 27 ns
- Channel Type :
- N Channel
- Pin Count :
- 3
- Mount :
- Through Hole
- Published :
- 2006
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Height :
- 26.16 mm
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 29ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 658W (Tc)
- Packaging :
- Tube
- Product Type :
- MOSFET
- Length :
- 19.96 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Base Product Number :
- IXFK44
- Mounting Style :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-264AA (IXFK)
- Product Category :
- MOSFET
- Subcategory :
- MOSFETs
- Number of Channels :
- 1 Channel
- JESD-30 Code :
- R-PSFM-T3
- Resistance :
- 140mOhm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Voltage (Vdss) :
- 500V
- Voltage - Rated DC :
- 500V
- Drain-source On Resistance-Max :
- 0.14 Ω
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- Gate to Source Voltage (Vgs) :
- 30V
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- JEDEC-95 Code :
- TO-264AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Number of Elements :
- 1
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Configuration :
- Single
- Factory Lead Time :
- 30 Weeks
- Datasheets
- IXFK44N50P

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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