IXFK44N50P

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Mfr.Part #
IXFK44N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264AA
Stock
16,199
In Stock :
16,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Current Rating :
44A
Drain-source On Resistance-Max :
0.14 Ω
Supplier Device Package :
TO-264AA (IXFK)
Power Dissipation :
650W
Series :
HiPerFET™, PolarHT™
Number of Elements :
1
Configuration :
Single
Continuous Drain Current (ID) :
44A
Height :
26.16 mm
Gate to Source Voltage (Vgs) :
30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
658W (Tc)
Mount :
Through Hole
Continuous Drain Current Id :
44A
Pulsed Drain Current-Max (IDM) :
110A
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Qualification :
-
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Factory Lead Time :
30 Weeks
Subcategory :
MOSFETs
Vgs (Max) :
±30V
Product Category :
MOSFET
Power Dissipation-Max :
658W Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Resistance :
140mOhm
FET Feature :
--
Manufacturer :
IXYS
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Package / Case :
TO-264-3, TO-264AA
Package :
Tube
Product Type :
MOSFET
Voltage - Rated DC :
500V
JESD-609 Code :
e1
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
29ns
Drain to Source Voltage (Vdss) :
500V
Brand :
IXYS
Fall Time (Typ) :
27 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Element Configuration :
Single
Width :
5.13 mm
Number of Terminals :
3
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
85 ns
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXFK44
Drain to Source Breakdown Voltage :
500V
Polarity/Channel Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Pin Count :
3
Mounting Style :
Through Hole
Mounting Type :
Through Hole
Terminal Position :
Single
Published :
2006
Qualification Status :
Not Qualified
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Lead Free :
Lead Free
RoHS :
Details
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Length :
19.96 mm
Channel Type :
N Channel
Case Connection :
DRAIN
JEDEC-95 Code :
TO-264AA
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
1700 mJ
Terminal Form :
THROUGH-HOLE
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
DS Breakdown Voltage-Min :
500 V
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Product Status :
Active
Datasheets
IXFK44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK44N50P pinout, IXFK44N50P datasheet PDF, IXFK44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXFK44N50P Applications


There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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