IXFK44N50P

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Mfr.Part #
IXFK44N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264AA
Stock
16,199
In Stock :
16,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Power Dissipation :
650W
Package / Case :
TO-264-3, TO-264AA
Channel Type :
N Channel
Supplier Device Package :
TO-264AA (IXFK)
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Height :
26.16 mm
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS
Number of Terminals :
3
Product Category :
MOSFET
Qualification :
-
Vgs(th) (Max) @ Id :
5V @ 4mA
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Terminal Position :
Single
Power Dissipation-Max :
658W Tc
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Drain-source On Resistance-Max :
0.14 Ω
Gate to Source Voltage (Vgs) :
30V
Avalanche Energy Rating (Eas) :
1700 mJ
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
RoHS :
Details
Package :
Tube
Package Shape :
RECTANGULAR
Product Status :
Active
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Current Rating :
44A
JESD-609 Code :
e1
Width :
5.13 mm
Power Dissipation (Max) :
658W (Tc)
JEDEC-95 Code :
TO-264AA
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Series :
HiPerFET™, PolarHT™
Pulsed Drain Current-Max (IDM) :
110A
Drain to Source Voltage (Vdss) :
500V
Element Configuration :
Single
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Rise Time :
29ns
Surface Mount :
No
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
44A
Tradename :
HiPerFET
Subcategory :
MOSFETs
Published :
2006
Voltage - Rated DC :
500V
Resistance :
140mOhm
Turn-Off Delay Time :
85 ns
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Pin Count :
3
DS Breakdown Voltage-Min :
500 V
Configuration :
Single
Mounting Type :
Through Hole
Case Connection :
DRAIN
Factory Lead Time :
30 Weeks
Packaging :
Tube
Fall Time (Typ) :
27 ns
Base Product Number :
IXFK44
Vgs (Max) :
±30V
Length :
19.96 mm
Channel Mode :
Enhancement
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
RoHS Status :
ROHS3 Compliant
Continuous Drain Current Id :
44A
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Maximum Operating Temperature :
+ 150 C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFK44N50P pinout, IXFK44N50P datasheet PDF, IXFK44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXFK44N50P Applications


There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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