IXFK44N50P
- Mfr.Part #
- IXFK44N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264AA
- Stock
- 16,199
- In Stock :
- 16,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 29ns
- Series :
- HiPerFET™, PolarHT™
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Width :
- 5.13 mm
- Surface Mount :
- No
- Configuration :
- Single
- Height :
- 26.16 mm
- Transistor Element Material :
- SILICON
- Qualification :
- -
- Resistance :
- 140mOhm
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 650W
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 110A
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 27 ns
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Voltage - Rated DC :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-264AA
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-264AA (IXFK)
- Channel Type :
- N Channel
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 44A
- Product Status :
- Active
- Package / Case :
- TO-264-3, TO-264AA
- RoHS :
- Details
- Subcategory :
- MOSFETs
- Power Dissipation-Max :
- 658W Tc
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current Id :
- 44A
- Turn-Off Delay Time :
- 85 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Mounting Style :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Brand :
- IXYS
- Number of Terminations :
- 3
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Current Rating :
- 44A
- Maximum Operating Temperature :
- + 150 C
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.14 Ω
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Base Product Number :
- IXFK44
- Product Category :
- MOSFET
- Tradename :
- HiPerFET
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Length :
- 19.96 mm
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 30 Weeks
- Power Dissipation (Max) :
- 658W (Tc)
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Datasheets
- IXFK44N50P

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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