IXFK44N50P

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Mfr.Part #
IXFK44N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264AA
Stock
16,199
In Stock :
16,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
FET Feature :
--
Drain to Source Breakdown Voltage :
500V
Number of Terminals :
3
Subcategory :
MOSFETs
Continuous Drain Current (ID) :
44A
Fall Time (Typ) :
27 ns
Resistance :
140mOhm
Transistor Polarity :
N-Channel
Voltage - Rated DC :
500V
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.14 Ω
RoHS :
Details
Terminal Form :
THROUGH-HOLE
Power Dissipation :
650W
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Package / Case :
TO-264-3, TO-264AA
Number of Elements :
1
Power Dissipation-Max :
658W Tc
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Element Configuration :
Single
Length :
19.96 mm
Qualification :
-
Mount :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 4mA
Published :
2006
Power Dissipation (Max) :
658W (Tc)
Product Category :
MOSFET
Channel Mode :
Enhancement
JESD-609 Code :
e1
Manufacturer :
IXYS
JESD-30 Code :
R-PSFM-T3
Package :
Tube
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-264AA
Height :
26.16 mm
Current Rating :
44A
Number of Terminations :
3
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
85 ns
Configuration :
Single
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Product Status :
Active
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.13 mm
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-264AA (IXFK)
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Product Type :
MOSFET
DS Breakdown Voltage-Min :
500 V
Drain to Source Voltage (Vdss) :
500V
Surface Mount :
No
Pbfree Code :
yes
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
110A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Series :
HiPerFET™, PolarHT™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Tradename :
HiPerFET
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Brand :
IXYS
Avalanche Energy Rating (Eas) :
1700 mJ
RoHS Status :
ROHS3 Compliant
Rise Time :
29ns
Channel Type :
N Channel
Pin Count :
3
Mounting Style :
Through Hole
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current Id :
44A
FET Type :
N-Channel
Base Product Number :
IXFK44
Datasheets
IXFK44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFK44N50P pinout, IXFK44N50P datasheet PDF, IXFK44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXFK44N50P Applications


There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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