IXFK44N50P
- Mfr.Part #
- IXFK44N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264AA
- Stock
- 16,199
- In Stock :
- 16,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 3
- Subcategory :
- MOSFETs
- Continuous Drain Current (ID) :
- 44A
- Fall Time (Typ) :
- 27 ns
- Resistance :
- 140mOhm
- Transistor Polarity :
- N-Channel
- Voltage - Rated DC :
- 500V
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.14 Ω
- RoHS :
- Details
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 650W
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Package / Case :
- TO-264-3, TO-264AA
- Number of Elements :
- 1
- Power Dissipation-Max :
- 658W Tc
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Length :
- 19.96 mm
- Qualification :
- -
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Published :
- 2006
- Power Dissipation (Max) :
- 658W (Tc)
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e1
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Package :
- Tube
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-264AA
- Height :
- 26.16 mm
- Current Rating :
- 44A
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 85 ns
- Configuration :
- Single
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Width :
- 5.13 mm
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-264AA (IXFK)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Voltage (Vdss) :
- 500V
- Surface Mount :
- No
- Pbfree Code :
- yes
- Factory Lead Time :
- 30 Weeks
- Pulsed Drain Current-Max (IDM) :
- 110A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Series :
- HiPerFET™, PolarHT™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Tradename :
- HiPerFET
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 29ns
- Channel Type :
- N Channel
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current Id :
- 44A
- FET Type :
- N-Channel
- Base Product Number :
- IXFK44
- Datasheets
- IXFK44N50P

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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