IXFK44N50P
- Mfr.Part #
- IXFK44N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264AA
- Stock
- 16,199
- In Stock :
- 16,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 110A
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 500V
- Height :
- 26.16 mm
- Product Category :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Fall Time (Typ) :
- 27 ns
- Channel Mode :
- Enhancement
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- Continuous Drain Current Id :
- 44A
- Power Dissipation :
- 650W
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 658W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Configuration :
- Single
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXFK44
- JEDEC-95 Code :
- TO-264AA
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 19.96 mm
- Voltage - Rated DC :
- 500V
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.14 Ω
- Supplier Device Package :
- TO-264AA (IXFK)
- Maximum Operating Temperature :
- + 150 C
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Qualification :
- -
- Width :
- 5.13 mm
- Power Dissipation-Max :
- 658W Tc
- Current Rating :
- 44A
- Continuous Drain Current (ID) :
- 44A
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Turn-Off Delay Time :
- 85 ns
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Tube
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Type :
- N Channel
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Subcategory :
- MOSFETs
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- DS Breakdown Voltage-Min :
- 500 V
- Lead Free :
- Lead Free
- Resistance :
- 140mOhm
- Series :
- HiPerFET™, PolarHT™
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 29ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFK44N50P
IXFK44N50P Documents

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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