IXFK44N50P

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Mfr.Part #
IXFK44N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264AA
Stock
16,199
In Stock :
16,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Power Dissipation :
650W
Element Configuration :
Single
Lead Free :
Lead Free
Transistor Type :
1 N-Channel
Width :
5.13 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current Id :
44A
Qualification :
-
FET Type :
N-Channel
Brand :
IXYS
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Current Rating :
44A
Tradename :
HiPerFET
Drain to Source Breakdown Voltage :
500V
Pulsed Drain Current-Max (IDM) :
110A
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
85 ns
Mounting Type :
Through Hole
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™, PolarHT™
Continuous Drain Current (ID) :
44A
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Power Dissipation-Max :
658W Tc
Vgs (Max) :
±30V
Fall Time (Typ) :
27 ns
Channel Type :
N Channel
Pin Count :
3
Mount :
Through Hole
Published :
2006
Transistor Application :
SWITCHING
RoHS :
Details
Vgs(th) (Max) @ Id :
5V @ 4mA
Height :
26.16 mm
Maximum Operating Temperature :
+ 150 C
Rise Time :
29ns
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
658W (Tc)
Packaging :
Tube
Product Type :
MOSFET
Length :
19.96 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Base Product Number :
IXFK44
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
JESD-609 Code :
e1
Package / Case :
TO-264-3, TO-264AA
Transistor Element Material :
SILICON
Supplier Device Package :
TO-264AA (IXFK)
Product Category :
MOSFET
Subcategory :
MOSFETs
Number of Channels :
1 Channel
JESD-30 Code :
R-PSFM-T3
Resistance :
140mOhm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
500V
Voltage - Rated DC :
500V
Drain-source On Resistance-Max :
0.14 Ω
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Gate to Source Voltage (Vgs) :
30V
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
JEDEC-95 Code :
TO-264AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Avalanche Energy Rating (Eas) :
1700 mJ
Number of Elements :
1
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Configuration :
Single
Factory Lead Time :
30 Weeks
Datasheets
IXFK44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, IXFK44N50P pinout, IXFK44N50P datasheet PDF, IXFK44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXFK44N50P Applications


There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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