IXFK44N50P

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Mfr.Part #
IXFK44N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264AA
Stock
16,199
In Stock :
16,199

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
500V
Rise Time :
29ns
Series :
HiPerFET™, PolarHT™
Terminal Form :
THROUGH-HOLE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.13 mm
Surface Mount :
No
Configuration :
Single
Height :
26.16 mm
Transistor Element Material :
SILICON
Qualification :
-
Resistance :
140mOhm
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Number of Channels :
1 Channel
Power Dissipation :
650W
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
110A
Gate to Source Voltage (Vgs) :
30V
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
27 ns
Vgs(th) (Max) @ Id :
5V @ 4mA
Voltage - Rated DC :
500V
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-264AA
Case Connection :
DRAIN
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-264AA (IXFK)
Channel Type :
N Channel
Element Configuration :
Single
Channel Mode :
Enhancement
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
44A
Product Status :
Active
Package / Case :
TO-264-3, TO-264AA
RoHS :
Details
Subcategory :
MOSFETs
Power Dissipation-Max :
658W Tc
Package Shape :
RECTANGULAR
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current Id :
44A
Turn-Off Delay Time :
85 ns
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Product Type :
MOSFET
Brand :
IXYS
Number of Terminations :
3
Published :
2006
RoHS Status :
ROHS3 Compliant
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Current Rating :
44A
Maximum Operating Temperature :
+ 150 C
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.14 Ω
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
500V
DS Breakdown Voltage-Min :
500 V
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Base Product Number :
IXFK44
Product Category :
MOSFET
Tradename :
HiPerFET
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Length :
19.96 mm
Mount :
Through Hole
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Factory Lead Time :
30 Weeks
Power Dissipation (Max) :
658W (Tc)
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
1700 mJ
Datasheets
IXFK44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IXFK44N50P pinout, IXFK44N50P datasheet PDF, IXFK44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXFK44N50P Applications


There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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