IXFK44N50F

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Mfr.Part #
IXFK44N50F
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264
Stock
2,749
In Stock :
2,749

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.12Ohm
Series :
HiPerRF™
Avalanche Energy Rating (Eas) :
2500 mJ
Pin Count :
3
Turn-Off Delay Time :
53 ns
Rise Time :
18ns
Min Operating Temperature :
-55 °C
Power Dissipation :
500W
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
500 V
Max Power Dissipation :
500 W
Fall Time (Typ) :
8 ns
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
500V
RoHS :
Compliant
Power Dissipation (Max) :
500W (Tc)
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
44 A
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Product Status :
Obsolete
Surface Mount :
No
Published :
2002
Max Operating Temperature :
150 °C
Transistor Application :
SWITCHING
Base Product Number :
IXFK44
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
184A
Supplier Device Package :
TO-264 (IXFK)
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Package :
Tube
Power Dissipation-Max (Abs) :
500 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-264-3, TO-264AA
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-264AA
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
156nC @ 10V
Drain to Source Resistance :
120 mΩ
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
500V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
JESD-609 Code :
e1
Vgs (Max) :
±20V
Element Configuration :
Single
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminals :
3
Power Dissipation-Max :
500W Tc
Terminal Position :
Single
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
44A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Packaging :
Tube
Datasheets
IXFK44N50F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50F from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFK44N50F pinout, IXFK44N50F datasheet PDF, IXFK44N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50F


N-Channel Tube 120m Ω @ 22A, 10V ±20V 5500pF @ 25V 156nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 44 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 184A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 120 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFK44N50F Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 184A.
single MOSFETs transistor is 120 mΩ
a 500V drain to source voltage (Vdss)


IXFK44N50F Applications


There are a lot of IXYS-RF
IXFK44N50F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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