IXFK44N50F

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Mfr.Part #
IXFK44N50F
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO264
Stock
2,749
In Stock :
2,749

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
500V
DS Breakdown Voltage-Min :
500 V
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
8 ns
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
THROUGH-HOLE
Product Status :
Obsolete
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Case Connection :
DRAIN
Manufacturer :
IXYS Corporation
Power Dissipation (Max) :
500W (Tc)
Turn-Off Delay Time :
53 ns
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
120m Ω @ 22A, 10V
Transistor Element Material :
SILICON
Package / Case :
TO-264-3, TO-264AA
ECCN Code :
EAR99
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
184A
FET Feature :
--
Number of Terminals :
3
Power Dissipation-Max :
500W Tc
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Package :
Tube
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Power Dissipation-Max (Abs) :
500 W
Max Operating Temperature :
150 °C
Series :
HiPerRF™
JEDEC-95 Code :
TO-264AA
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Max Power Dissipation :
500 W
RoHS :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
Compliant
JESD-609 Code :
e1
Published :
2002
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation :
500W
REACH SVHC :
No SVHC
Base Product Number :
IXFK44
Drain Current-Max (Abs) (ID) :
44 A
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
44A
Drain-source On Resistance-Max :
0.12Ohm
Supplier Device Package :
TO-264 (IXFK)
Terminal Position :
Single
Drain to Source Resistance :
120 mΩ
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Operating Temperature :
-55°C~150°C TJ
Min Operating Temperature :
-55 °C
Rise Time :
18ns
Gate Charge (Qg) (Max) @ Vgs :
156nC @ 10V
Avalanche Energy Rating (Eas) :
2500 mJ
Drain to Source Voltage (Vdss) :
500V
Datasheets
IXFK44N50F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50F from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK44N50F pinout, IXFK44N50F datasheet PDF, IXFK44N50F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50F


N-Channel Tube 120m Ω @ 22A, 10V ±20V 5500pF @ 25V 156nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 44 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 184A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 120 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFK44N50F Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 184A.
single MOSFETs transistor is 120 mΩ
a 500V drain to source voltage (Vdss)


IXFK44N50F Applications


There are a lot of IXYS-RF
IXFK44N50F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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