IXFK44N50F
- Mfr.Part #
- IXFK44N50F
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264
- Stock
- 2,749
- In Stock :
- 2,749
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.12Ohm
- Series :
- HiPerRF™
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Pin Count :
- 3
- Turn-Off Delay Time :
- 53 ns
- Rise Time :
- 18ns
- Min Operating Temperature :
- -55 °C
- Power Dissipation :
- 500W
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 500 V
- Max Power Dissipation :
- 500 W
- Fall Time (Typ) :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 500V
- RoHS :
- Compliant
- Power Dissipation (Max) :
- 500W (Tc)
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 44 A
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Product Status :
- Obsolete
- Surface Mount :
- No
- Published :
- 2002
- Max Operating Temperature :
- 150 °C
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXFK44
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 184A
- Supplier Device Package :
- TO-264 (IXFK)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 500 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-264-3, TO-264AA
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 156nC @ 10V
- Drain to Source Resistance :
- 120 mΩ
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 500W Tc
- Terminal Position :
- Single
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 44A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Packaging :
- Tube
- Datasheets
- IXFK44N50F

N-Channel Tube 120m Ω @ 22A, 10V ±20V 5500pF @ 25V 156nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50F Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 44 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 184A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 120 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFK44N50F Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 184A.
single MOSFETs transistor is 120 mΩ
a 500V drain to source voltage (Vdss)
IXFK44N50F Applications
There are a lot of IXYS-RF
IXFK44N50F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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