IXFK44N50
- Mfr.Part #
- IXFK44N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO-264AA
- Stock
- 21,028
- In Stock :
- 21,028
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Height :
- 26.16 mm
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 500V
- Voltage - Rated DC :
- 500V
- Terminal Position :
- Single
- Published :
- 2006
- Width :
- 5.13 mm
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- Compliant
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 44A
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fall Time (Typ) :
- 27 ns
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current Rating :
- 44A
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Resistance :
- 140mOhm
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Power Dissipation-Max :
- 658W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Tradename :
- HiPerFET
- Manufacturer :
- IXYS
- Subcategory :
- MOSFETs
- Element Configuration :
- Single
- Rise Time :
- 29ns
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Length :
- 19.96 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Packaging :
- Tube
- Factory Lead Time :
- 30 Weeks
- Drain-source On Resistance-Max :
- 0.14 Ω
- Channel Type :
- N Channel
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-264AA
- DS Breakdown Voltage-Min :
- 500 V
- Turn-Off Delay Time :
- 85 ns
- Transistor Polarity :
- N-Channel
- Continuous Drain Current Id :
- 44A
- Pulsed Drain Current-Max (IDM) :
- 110A
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Base Product Number :
- IXFK44
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Power Dissipation (Max) :
- 658W (Tc)
- FET Type :
- N-Channel
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-264AA (IXFK)
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- JESD-609 Code :
- e1
- Power Dissipation :
- 650W
- Series :
- HiPerFET™, PolarHT™
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification :
- -
- Surface Mount :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXFK44N50

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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