IXFK44N50

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Mfr.Part #
IXFK44N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO-264AA
Stock
21,028
In Stock :
21,028

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
19.96 mm
Channel Type :
N Channel
Tradename :
HiPerFET
Fall Time (Typ) :
27 ns
Current - Continuous Drain (Id) @ 25°C :
44A Tc
JEDEC-95 Code :
TO-264AA
JESD-609 Code :
e1
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Height :
26.16 mm
Package / Case :
TO-264-3, TO-264AA
Product Type :
MOSFET
Power Dissipation (Max) :
658W (Tc)
Reach Compliance Code :
Compliant
Minimum Operating Temperature :
- 55 C
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
1700 mJ
DS Breakdown Voltage-Min :
500 V
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
44A
Drain-source On Resistance-Max :
0.14 Ω
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Element Material :
SILICON
Continuous Drain Current Id :
44A
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Product Category :
MOSFET
Resistance :
140mOhm
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Packaging :
Tube
FET Type :
N-Channel
Rise Time :
29ns
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
500V
Supplier Device Package :
TO-264AA (IXFK)
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Width :
5.13 mm
Drain to Source Breakdown Voltage :
500V
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Number of Terminals :
3
Surface Mount :
No
Manufacturer :
IXYS
Current Rating :
44A
Factory Lead Time :
30 Weeks
FET Feature :
--
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Number of Channels :
1 Channel
Base Product Number :
IXFK44
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
110A
Element Configuration :
Single
Vgs(th) (Max) @ Id :
5V @ 4mA
Channel Mode :
Enhancement
Configuration :
Single
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Lead Free :
Lead Free
Power Dissipation :
650W
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
85 ns
Pin Count :
3
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Published :
2006
Series :
HiPerFET™, PolarHT™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Subcategory :
MOSFETs
Power Dissipation-Max :
658W Tc
Qualification :
-
Product Status :
Active
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK44N50 pinout, IXFK44N50 datasheet PDF, IXFK44N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK44N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK44N50


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA

IXFK44N50P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXFK44N50P Applications


There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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