IXFK44N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification :

-

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Series :

HiPerFET™, PolarHT™

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Element Configuration :

Single

Supplier Device Package :

TO-264AA (IXFK)

Number of Terminations :

3

Number of Elements :

1

Height :

26.16 mm

Vgs(th) (Max) @ Id :

5V @ 4mA

Minimum Operating Temperature :

- 55 C

Subcategory :

MOSFETs

Rise Time :

29ns

Power Dissipation (Max) :

658W (Tc)

DS Breakdown Voltage-Min :

500 V

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

1700 mJ

Drain to Source Breakdown Voltage :

500V

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±30V

Base Product Number :

IXFK44

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5440pF @ 25V

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Published :

2006

Package :

Tube

Power Dissipation :

650W

FET Type :

N-Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

140m Ω @ 22A, 10V

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Channel Type :

N Channel

Turn-Off Delay Time :

85 ns

Length :

19.96 mm

Surface Mount :

No

Drain-source On Resistance-Max :

0.14 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Brand :

IXYS

Lead Free :

Lead Free

Terminal Position :

Single

Current Rating :

44A

Drain to Source Voltage (Vdss) :

500V

Manufacturer :

IXYS

Continuous Drain Current Id :

44A

Package / Case :

TO-264-3, TO-264AA

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Fall Time (Typ) :

27 ns

Transistor Type :

1 N-Channel

Power Dissipation-Max :

658W Tc

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

110A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Width :

5.13 mm

Transistor Application :

SWITCHING

Number of Terminals :

3

Factory Lead Time :

30 Weeks

Resistance :

140mOhm

Voltage - Rated DC :

500V

Product Status :

Active

FET Feature :

--

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

JEDEC-95 Code :

TO-264AA

Continuous Drain Current (ID) :

44A

Case Connection :

DRAIN

Mounting Style :

Through Hole

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V