IXFK44N50
- Mfr.Part #
- IXFK44N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO-264AA
- Stock
- 21,028
- In Stock :
- 21,028
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 19.96 mm
- Channel Type :
- N Channel
- Tradename :
- HiPerFET
- Fall Time (Typ) :
- 27 ns
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- JEDEC-95 Code :
- TO-264AA
- JESD-609 Code :
- e1
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 26.16 mm
- Package / Case :
- TO-264-3, TO-264AA
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 658W (Tc)
- Reach Compliance Code :
- Compliant
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- DS Breakdown Voltage-Min :
- 500 V
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 44A
- Drain-source On Resistance-Max :
- 0.14 Ω
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Continuous Drain Current Id :
- 44A
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Product Category :
- MOSFET
- Resistance :
- 140mOhm
- Package Shape :
- RECTANGULAR
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- FET Type :
- N-Channel
- Rise Time :
- 29ns
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- TO-264AA (IXFK)
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 5.13 mm
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Current Rating :
- 44A
- Factory Lead Time :
- 30 Weeks
- FET Feature :
- --
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFK44
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 110A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Power Dissipation :
- 650W
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 85 ns
- Pin Count :
- 3
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2006
- Series :
- HiPerFET™, PolarHT™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Subcategory :
- MOSFETs
- Power Dissipation-Max :
- 658W Tc
- Qualification :
- -
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFK44N50
IXFK44N50 Documents

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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