IXFK420N10T

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Mfr.Part #
IXFK420N10T
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 420A TO264AA
Stock
38,657
In Stock :
38,657

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
1670 W
Type :
GigaMos Trench HiperFet Power MOSFET
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Tradename :
HiPerFET
Pbfree Code :
yes
Brand :
IXYS
DS Breakdown Voltage-Min :
100V
Series :
GigaMOS™ HiPerFET™
Input Capacitance (Ciss) (Max) @ Vds :
47000pF @ 25V
Base Product Number :
IXFK420
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Mount :
Through Hole
Rds On Max :
2.6 mΩ
Number of Terminations :
3
Package / Case :
TO-264-3, TO-264AA
Width :
5.13 mm
Lead Free :
Lead Free
Product Category :
MOSFET
Supplier Device Package :
TO-264AA (IXFK)
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
1000A
Power Dissipation (Max) :
1670W (Tc)
FET Feature :
--
RoHS :
Details
Number of Channels :
1 Channel
Surface Mount :
No
Maximum Operating Temperature :
+ 175 C
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
2.6m Ω @ 60A, 10V
Drain Current-Max (Abs) (ID) :
420 A
Continuous Drain Current (ID) :
420A
Product Type :
MOSFET
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Mounting Type :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
1670W Tc
Packaging :
Tube
Length :
19.96 mm
Current - Continuous Drain (Id) @ 25°C :
420A Tc
Terminal Finish :
TIN SILVER COPPER
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 8mA
Input Capacitance :
47 nF
Height :
26.16 mm
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Unknown
Pin Count :
3
Published :
2009
JEDEC-95 Code :
TO-264AA
Gate Charge (Qg) (Max) @ Vgs :
670nC @ 10V
Product Status :
Active
Avalanche Energy Rating (Eas) :
5000 mJ
Package :
Tube
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
Max Power Dissipation :
1.67 kW
Drain-source On Resistance-Max :
0.0026Ohm
Additional Feature :
AVALANCHE RATED
Rise Time :
155 ns
Drain to Source Voltage (Vdss) :
100V
Factory Lead Time :
20 Weeks
Terminal Form :
THROUGH-HOLE
Datasheets
IXFK420N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK420N10T from Chip IC,where excellence meets affordability. This product stands out with its Type:GigaMos Trench HiperFet Power MOSFET, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXFK420N10T pinout, IXFK420N10T datasheet PDF, IXFK420N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK420N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK420N10T


N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 47000pF @ 25V 670nC @ 10V 100V TO-264-3, TO-264AA

IXFK420N10T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The maximum input capacitance of this device is 47000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 420A.As shown in the table below, the drain current of this device is 420 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 1000A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK420N10T Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 420A
based on its rated peak drain current 1000A.
a 100V drain to source voltage (Vdss)


IXFK420N10T Applications


There are a lot of IXYS
IXFK420N10T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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