IXFK420N10T
- Mfr.Part #
- IXFK420N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 420A TO264AA
- Stock
- 38,657
- In Stock :
- 38,657
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 1670 W
- Type :
- GigaMos Trench HiperFet Power MOSFET
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 100V
- Series :
- GigaMOS™ HiPerFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 47000pF @ 25V
- Base Product Number :
- IXFK420
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Rds On Max :
- 2.6 mΩ
- Number of Terminations :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Width :
- 5.13 mm
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 1000A
- Power Dissipation (Max) :
- 1670W (Tc)
- FET Feature :
- --
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 175 C
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Drain Current-Max (Abs) (ID) :
- 420 A
- Continuous Drain Current (ID) :
- 420A
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 1670W Tc
- Packaging :
- Tube
- Length :
- 19.96 mm
- Current - Continuous Drain (Id) @ 25°C :
- 420A Tc
- Terminal Finish :
- TIN SILVER COPPER
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Input Capacitance :
- 47 nF
- Height :
- 26.16 mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Published :
- 2009
- JEDEC-95 Code :
- TO-264AA
- Gate Charge (Qg) (Max) @ Vgs :
- 670nC @ 10V
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Max Power Dissipation :
- 1.67 kW
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 155 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Factory Lead Time :
- 20 Weeks
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXFK420N10T

N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 47000pF @ 25V 670nC @ 10V 100V TO-264-3, TO-264AA
IXFK420N10T Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The maximum input capacitance of this device is 47000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 420A.As shown in the table below, the drain current of this device is 420 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 1000A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK420N10T Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 420A
based on its rated peak drain current 1000A.
a 100V drain to source voltage (Vdss)
IXFK420N10T Applications
There are a lot of IXYS
IXFK420N10T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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