IXFK40N90P

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Mfr.Part #
IXFK40N90P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 900V 40A TO264AA
Stock
270
In Stock :
270

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Channels :
1 Channel
Power Dissipation (Max) :
960W (Tc)
Avalanche Energy Rating (Eas) :
1500 mJ
Package :
Tube
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
80A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
960W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
50ns
Reach Compliance Code :
Compliant
Rds On Max :
230 mΩ
Terminal Position :
Single
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Brand :
IXYS
Configuration :
Single
Package Shape :
RECTANGULAR
Max Power Dissipation :
960 W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Min Operating Temperature :
-55 °C
Case Connection :
DRAIN
FET Type :
N-Channel
Turn-Off Delay Time :
77 ns
Supplier Device Package :
TO-264AA (IXFK)
Transistor Element Material :
SILICON
Factory Lead Time :
30 Weeks
Element Configuration :
Single
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Pin Count :
3
FET Feature :
--
Published :
2011
Base Product Number :
IXFK40
Drain-source On Resistance-Max :
0.21Ohm
Power Dissipation-Max (Abs) :
960 W
Number of Terminations :
3
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
900V
Max Operating Temperature :
150 °C
Rds On (Max) @ Id, Vgs :
230m Ω @ 20A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance :
14 nF
Mount :
Through Hole
RoHS :
Details
Fall Time (Typ) :
46 ns
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
Power Dissipation :
960W
DS Breakdown Voltage-Min :
900 V
Transistor Application :
SWITCHING
Package / Case :
TO-264-3, TO-264AA
Continuous Drain Current (ID) :
40A
JEDEC-95 Code :
TO-264AA
Packaging :
Tube
Mounting Style :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Vgs (Max) :
±30V
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Series :
HiPerFET™, PolarP2™
Drain to Source Breakdown Voltage :
900V
Qualification Status :
Not Qualified
Tradename :
HiPerFET
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 25V
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Drain to Source Resistance :
210 mΩ
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Drain Current-Max (Abs) (ID) :
40 A
Pbfree Code :
yes
Datasheets
IXFK40N90P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK40N90P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, IXFK40N90P pinout, IXFK40N90P datasheet PDF, IXFK40N90P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK40N90P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK40N90P


N-Channel Tube 230m Ω @ 20A, 10V ±30V 14000pF @ 25V 230nC @ 10V 900V TO-264-3, TO-264AA

IXFK40N90P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14000pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.A device's drain current is its maximum continuous current, and this device's drain current is 40 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 77 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.MOSFETs have 210 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900 V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK40N90P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 80A.
single MOSFETs transistor is 210 mΩ
a 900V drain to source voltage (Vdss)


IXFK40N90P Applications


There are a lot of IXYS
IXFK40N90P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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