IXFK40N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Turn-Off Delay Time :

77 ns

Supplier Device Package :

TO-264AA (IXFK)

Max Operating Temperature :

150 °C

Vgs (Max) :

±30V

Series :

HiPerFET™, PolarP2™

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

960 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2011

Input Capacitance :

14 nF

Power Dissipation (Max) :

960W (Tc)

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

80A

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Rds On Max :

230 mΩ

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Mounting Type :

Through Hole

Factory Lead Time :

30 Weeks

Drain to Source Voltage (Vdss) :

900V

Number of Terminals :

3

Max Power Dissipation :

960 W

Number of Elements :

1

Package :

Tube

Pin Count :

3

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-264AA

Product Category :

MOSFET

Mount :

Through Hole

FET Type :

N-Channel

Transistor Polarity :

N-Channel

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Drain Current-Max (Abs) (ID) :

40 A

Configuration :

Single

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

1500 mJ

Drain-source On Resistance-Max :

0.21Ohm

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Pbfree Code :

yes

Base Product Number :

IXFK40

Fall Time (Typ) :

46 ns

JESD-30 Code :

R-PSFM-T3

Brand :

IXYS

Package / Case :

TO-264-3, TO-264AA

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

900V

Transistor Element Material :

SILICON

RoHS :

Details

Rise Time :

50ns

Product Status :

Active

Drain to Source Resistance :

210 mΩ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Min Operating Temperature :

-55 °C

Number of Terminations :

3

Continuous Drain Current (ID) :

40A

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Tradename :

HiPerFET

Rds On (Max) @ Id, Vgs :

230m Ω @ 20A, 10V

DS Breakdown Voltage-Min :

900 V

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Terminal Position :

Single

Power Dissipation-Max :

960W Tc

Power Dissipation :

960W

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube