IXFK40N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

FET Type :

N-Channel

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Supplier Device Package :

TO-264AA (IXFK)

Number of Channels :

1 Channel

Fall Time (Typ) :

46 ns

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFK40

Surface Mount :

No

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

900 V

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max (Abs) :

960 W

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Product Type :

MOSFET

Published :

2011

Product Category :

MOSFET

Element Configuration :

Single

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Series :

HiPerFET™, PolarP2™

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

960W (Tc)

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Avalanche Energy Rating (Eas) :

1500 mJ

Package :

Tube

Power Dissipation :

960W

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

230m Ω @ 20A, 10V

Turn-Off Delay Time :

77 ns

Rds On Max :

230 mΩ

Mounting Type :

Through Hole

Pin Count :

3

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Continuous Drain Current (ID) :

40A

Qualification Status :

Not Qualified

Configuration :

Single

Vgs (Max) :

±30V

Packaging :

Tube

Number of Elements :

1

Max Power Dissipation :

960 W

Drain to Source Breakdown Voltage :

900V

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

14 nF

Power Dissipation-Max :

960W Tc

Drain-source On Resistance-Max :

0.21Ohm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Drain Current-Max (Abs) (ID) :

40 A

Operating Temperature :

-55°C~150°C TJ

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Rise Time :

50ns

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

JESD-30 Code :

R-PSFM-T3

Max Operating Temperature :

150 °C

Package Shape :

RECTANGULAR

Terminal Position :

Single

Manufacturer :

IXYS

Mount :

Through Hole

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-264AA

Case Connection :

DRAIN

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

900V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

210 mΩ

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON