IXFK40N90P
- Mfr.Part #
- IXFK40N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 40A TO264AA
- Stock
- 270
- In Stock :
- 270
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 960W (Tc)
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Package :
- Tube
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 80A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 960W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 50ns
- Reach Compliance Code :
- Compliant
- Rds On Max :
- 230 mΩ
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Brand :
- IXYS
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Max Power Dissipation :
- 960 W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Min Operating Temperature :
- -55 °C
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 77 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 30 Weeks
- Element Configuration :
- Single
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- FET Feature :
- --
- Published :
- 2011
- Base Product Number :
- IXFK40
- Drain-source On Resistance-Max :
- 0.21Ohm
- Power Dissipation-Max (Abs) :
- 960 W
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 900V
- Max Operating Temperature :
- 150 °C
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 20A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance :
- 14 nF
- Mount :
- Through Hole
- RoHS :
- Details
- Fall Time (Typ) :
- 46 ns
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 960W
- DS Breakdown Voltage-Min :
- 900 V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-264-3, TO-264AA
- Continuous Drain Current (ID) :
- 40A
- JEDEC-95 Code :
- TO-264AA
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, PolarP2™
- Drain to Source Breakdown Voltage :
- 900V
- Qualification Status :
- Not Qualified
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 14000pF @ 25V
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 210 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Drain Current-Max (Abs) (ID) :
- 40 A
- Pbfree Code :
- yes
- Datasheets
- IXFK40N90P

N-Channel Tube 230m Ω @ 20A, 10V ±30V 14000pF @ 25V 230nC @ 10V 900V TO-264-3, TO-264AA
IXFK40N90P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14000pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.A device's drain current is its maximum continuous current, and this device's drain current is 40 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 77 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.MOSFETs have 210 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900 V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFK40N90P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 80A.
single MOSFETs transistor is 210 mΩ
a 900V drain to source voltage (Vdss)
IXFK40N90P Applications
There are a lot of IXYS
IXFK40N90P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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