IXFK38N80Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-264AA (IXFK)

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

4000 mJ

Product Status :

Active

Case Connection :

DRAIN

Number of Terminations :

3

Terminal Position :

Single

JEDEC-95 Code :

TO-264AA

Power Dissipation :

735W

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Drain-source On Resistance-Max :

0.22Ohm

Tradename :

HiPerFET

Turn-Off Delay Time :

60 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Continuous Drain Current (ID) :

38A

DS Breakdown Voltage-Min :

800 V

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PSFM-T3

Brand :

IXYS

Transistor Element Material :

SILICON

Fall Time (Typ) :

12 ns

RoHS :

Details

Pbfree Code :

yes

Pin Count :

3

Product Type :

MOSFET

Vgs (Max) :

±30V

Number of Terminals :

3

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

150 A

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

JESD-609 Code :

e1

Package / Case :

TO-264-3, TO-264AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

38 A

Turn On Delay Time :

20 ns

Power Dissipation (Max) :

735W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

Published :

2004

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Package :

Tube

Width :

5.13mm

Rds On (Max) @ Id, Vgs :

220m Ω @ 19A, 10V

Number of Pins :

3

Series :

HiPerFET™

Packaging :

Tube

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Lead Free :

Lead Free

Channel Mode :

Enhancement

Height :

26.16mm

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

800V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

8340pF @ 25V

Package Shape :

RECTANGULAR

Surface Mount :

No

Radiation Hardening :

No

Power Dissipation-Max :

735W Tc

Additional Feature :

AVALANCHE RATED

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Factory Lead Time :

10 Weeks

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Length :

19.96mm

Configuration :

Single

Terminal Form :

THROUGH-HOLE

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Power Dissipation-Max (Abs) :

735 W

Rise Time :

16ns

Base Product Number :

IXFK38

Minimum Operating Temperature :

- 55 C