IXFK38N80Q2
- Mfr.Part #
- IXFK38N80Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 38A TO264AA
- Stock
- 40,541
- In Stock :
- 40,541
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 800V
- Configuration :
- Single
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 19.96mm
- Continuous Drain Current (ID) :
- 38A
- Manufacturer :
- IXYS
- Factory Lead Time :
- 10 Weeks
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Brand :
- IXYS
- JESD-609 Code :
- e1
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 735W Tc
- Base Product Number :
- IXFK38
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- Power Dissipation-Max (Abs) :
- 735 W
- Turn-Off Delay Time :
- 60 ns
- JEDEC-95 Code :
- TO-264AA
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 735W
- Tradename :
- HiPerFET
- DS Breakdown Voltage-Min :
- 800 V
- Fall Time (Typ) :
- 12 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Published :
- 2004
- Rise Time :
- 16ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 8340pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Radiation Hardening :
- No
- Width :
- 5.13mm
- Drain Current-Max (Abs) (ID) :
- 38 A
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Supplier Device Package :
- TO-264AA (IXFK)
- Terminal Form :
- THROUGH-HOLE
- Height :
- 26.16mm
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Package :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Mount :
- Through Hole
- RoHS :
- Details
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn On Delay Time :
- 20 ns
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.22Ohm
- Drain to Source Voltage (Vdss) :
- 800V
- Power Dissipation (Max) :
- 735W (Tc)
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 19A, 10V
- Channel Mode :
- Enhancement
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Datasheets
- IXFK38N80Q2

N-Channel Tube 220m Ω @ 19A, 10V ±30V 8340pF @ 25V 190nC @ 10V 800V TO-264-3, TO-264AA
IXFK38N80Q2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8340pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 38A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.38 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 150 A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFK38N80Q2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150 A.
a 800V drain to source voltage (Vdss)
IXFK38N80Q2 Applications
There are a lot of IXYS
IXFK38N80Q2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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