IXFK38N80Q2

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Mfr.Part #
IXFK38N80Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 38A TO264AA
Stock
40,541
In Stock :
40,541

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
800V
Configuration :
Single
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Length :
19.96mm
Continuous Drain Current (ID) :
38A
Manufacturer :
IXYS
Factory Lead Time :
10 Weeks
Reach Compliance Code :
Compliant
Element Configuration :
Single
Brand :
IXYS
JESD-609 Code :
e1
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
735W Tc
Base Product Number :
IXFK38
Surface Mount :
No
Mounting Style :
Through Hole
Power Dissipation-Max (Abs) :
735 W
Turn-Off Delay Time :
60 ns
JEDEC-95 Code :
TO-264AA
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Power Dissipation :
735W
Tradename :
HiPerFET
DS Breakdown Voltage-Min :
800 V
Fall Time (Typ) :
12 ns
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Pulsed Drain Current-Max (IDM) :
150 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Published :
2004
Rise Time :
16ns
Input Capacitance (Ciss) (Max) @ Vds :
8340pF @ 25V
Gate to Source Voltage (Vgs) :
30V
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Series :
HiPerFET™
Number of Terminations :
3
Package Shape :
RECTANGULAR
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Radiation Hardening :
No
Width :
5.13mm
Drain Current-Max (Abs) (ID) :
38 A
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Supplier Device Package :
TO-264AA (IXFK)
Terminal Form :
THROUGH-HOLE
Height :
26.16mm
Pbfree Code :
yes
Number of Channels :
1 Channel
Terminal Position :
Single
Package :
Tube
Package / Case :
TO-264-3, TO-264AA
Product Status :
Active
Polarity/Channel Type :
N-Channel
Number of Pins :
3
Number of Terminals :
3
Mount :
Through Hole
RoHS :
Details
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Turn On Delay Time :
20 ns
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.22Ohm
Drain to Source Voltage (Vdss) :
800V
Power Dissipation (Max) :
735W (Tc)
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
220m Ω @ 19A, 10V
Channel Mode :
Enhancement
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
4000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Qualification Status :
Not Qualified
Datasheets
IXFK38N80Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK38N80Q2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Mounting Type:Through Hole, IXFK38N80Q2 pinout, IXFK38N80Q2 datasheet PDF, IXFK38N80Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK38N80Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK38N80Q2


N-Channel Tube 220m Ω @ 19A, 10V ±30V 8340pF @ 25V 190nC @ 10V 800V TO-264-3, TO-264AA

IXFK38N80Q2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 4000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8340pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 38A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.38 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 150 A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK38N80Q2 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150 A.
a 800V drain to source voltage (Vdss)


IXFK38N80Q2 Applications


There are a lot of IXYS
IXFK38N80Q2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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