IXFK36N60P

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Mfr.Part #
IXFK36N60P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 36A TO264AA
Stock
38,142
In Stock :
38,142

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
600 V
Product Status :
Active
Published :
2006
Transistor Type :
1 N-Channel
Current Rating :
36A
Package :
Tube
Product Category :
MOSFET
Factory Lead Time :
30 Weeks
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
36A
Number of Terminations :
3
Case Connection :
DRAIN
Fall Time (Typ) :
22 ns
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.19Ohm
Drain to Source Breakdown Voltage :
600V
Base Product Number :
IXFK36
Maximum Operating Temperature :
+ 150 C
Subcategory :
MOSFETs
Drain to Source Voltage (Vdss) :
600V
Pulsed Drain Current-Max (IDM) :
80A
Length :
19.96 mm
Vgs(th) (Max) @ Id :
5V @ 4mA
Vgs (Max) :
±30V
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
30V
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Series :
HiPerFET™, PolarHT™
Operating Mode :
ENHANCEMENT MODE
Rise Time :
25ns
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Number of Pins :
3
Number of Terminals :
3
Power Dissipation :
650W
Transistor Element Material :
SILICON
Pin Count :
3
Configuration :
Single
Power Dissipation-Max :
650W Tc
Gate Charge (Qg) (Max) @ Vgs :
102nC @ 10V
Power Dissipation (Max) :
650W (Tc)
Width :
5.13 mm
Surface Mount :
No
Mount :
Through Hole
Tradename :
HiPerFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rds On (Max) @ Id, Vgs :
190m Ω @ 18A, 10V
Channel Mode :
Enhancement
Supplier Device Package :
TO-264AA (IXFK)
Terminal Position :
Single
Product Type :
MOSFET
JESD-609 Code :
e1
Package / Case :
TO-264-3, TO-264AA
Avalanche Energy Rating (Eas) :
1500 mJ
Turn-Off Delay Time :
80 ns
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-264AA
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
600V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Height :
26.16 mm
Mounting Style :
Through Hole
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Datasheets
IXFK36N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK36N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, IXFK36N60P pinout, IXFK36N60P datasheet PDF, IXFK36N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK36N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK36N60P


N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-264-3, TO-264AA

IXFK36N60P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 36A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 80A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK36N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXFK36N60P Applications


There are a lot of IXYS
IXFK36N60P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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