IXFK36N60P
- Mfr.Part #
- IXFK36N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO264AA
- Stock
- 38,142
- In Stock :
- 38,142
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFK36
- DS Breakdown Voltage-Min :
- 600 V
- Qualification Status :
- Not Qualified
- Rise Time :
- 25ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 18A, 10V
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 102nC @ 10V
- Product Status :
- Active
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 650W Tc
- Lead Free :
- Lead Free
- Channel Mode :
- Enhancement
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 19.96 mm
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-264AA
- Current Rating :
- 36A
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Subcategory :
- MOSFETs
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Package :
- Tube
- Continuous Drain Current (ID) :
- 36A
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 600V
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 80 ns
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation :
- 650W
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Height :
- 26.16 mm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Type :
- MOSFET
- Width :
- 5.13 mm
- RoHS :
- Details
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™, PolarHT™
- Power Dissipation (Max) :
- 650W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Fall Time (Typ) :
- 22 ns
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.19Ohm
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Datasheets
- IXFK36N60P

N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-264-3, TO-264AA
IXFK36N60P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 36A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 80A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFK36N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFK36N60P Applications
There are a lot of IXYS
IXFK36N60P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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