IXFK36N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

144A

Base Product Number :

IXFK36

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Power Dissipation :

500W

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.18ohm

Product Type :

MOSFET

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

500W Tc

Tradename :

HyperFET

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

45ns

Drain to Source Voltage (Vdss) :

600V

Power Dissipation Ambient-Max :

500 W

Channel Mode :

Enhancement

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Manufacturer :

IXYS

Number of Pins :

3

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Lead Free :

Contains Lead

Package / Case :

TO-264-3, TO-264AA

Reach Compliance Code :

Compliant

Threshold Voltage :

4.5V

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

36A

Power Dissipation-Max (Abs) :

500 W

Element Configuration :

Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

36 A

Current Rating :

36A

Case Connection :

DRAIN

Package :

Tube

Published :

1996

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Terminals :

3

Configuration :

Single

Fall Time (Typ) :

60 ns

JEDEC-95 Code :

TO-264

Power Dissipation (Max) :

500W (Tc)

Brand :

IXYS

Length :

19.96 mm

Width :

5.13 mm

FET Feature :

--

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 25V

Supplier Device Package :

TO-264AA (IXFK)

Weight :

10mg

Turn-Off Delay Time :

100 ns

Surface Mount :

No

DS Breakdown Voltage-Min :

600 V

RoHS :

Details

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

6 Weeks

Series :

HiPerFET™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

26.16 mm

Number of Terminations :

3

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Product Status :

Active

Qualification Status :

Not Qualified

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C