IXFK36N60
- Mfr.Part #
- IXFK36N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO264AA
- Stock
- 9,820
- In Stock :
- 9,820
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 325nC @ 25V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 500W Tc
- Terminal Position :
- Single
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Length :
- 19.96 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- JEDEC-95 Code :
- TO-264
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 600V
- Product Status :
- Active
- Width :
- 5.13 mm
- Configuration :
- Single
- Number of Pins :
- 3
- Voltage - Rated DC :
- 600V
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 45ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Threshold Voltage :
- 4.5V
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 3
- Height :
- 26.16 mm
- Supplier Device Package :
- TO-264AA (IXFK)
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.18ohm
- Tradename :
- HyperFET
- Power Dissipation (Max) :
- 500W (Tc)
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 500mA, 10V
- Drain Current-Max (Abs) (ID) :
- 36 A
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 500 W
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Contains Lead
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation Ambient-Max :
- 500 W
- Current Rating :
- 36A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation :
- 500W
- Weight :
- 10mg
- Brand :
- IXYS
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFK36
- Fall Time (Typ) :
- 60 ns
- Series :
- HiPerFET™
- DS Breakdown Voltage-Min :
- 600 V
- Turn-Off Delay Time :
- 100 ns
- FET Type :
- N-Channel
- Published :
- 1996
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Pin Count :
- 3
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 144A
- Package / Case :
- TO-264-3, TO-264AA
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 36A
- Datasheets
- IXFK36N60

N-Channel Tube 180m Ω @ 500mA, 10V ±20V 9000pF @ 25V 325nC @ 25V 600V TO-264-3, TO-264AA
IXFK36N60 Overview
The maximum input capacitance of this device is 9000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 36 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 144A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK36N60 Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 144A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IXFK36N60 Applications
There are a lot of IXYS
IXFK36N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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