IXFK36N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 25V

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Configuration :

Single

Brand :

IXYS

FET Feature :

--

Factory Lead Time :

6 Weeks

Transistor Polarity :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Published :

1996

Rds On (Max) @ Id, Vgs :

180m Ω @ 500mA, 10V

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

REACH SVHC :

No SVHC

Fall Time (Typ) :

60 ns

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

144A

Threshold Voltage :

4.5V

Package :

Tube

Pin Count :

3

Terminal Position :

Single

Power Dissipation :

500W

Transistor Application :

SWITCHING

Product Category :

MOSFET

HTS Code :

8541.29.00.95

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Height :

26.16 mm

Rise Time :

45ns

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600 V

Voltage - Rated DC :

600V

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

100 ns

Supplier Device Package :

TO-264AA (IXFK)

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-264

Drain to Source Voltage (Vdss) :

600V

Manufacturer :

IXYS

Width :

5.13 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Product Status :

Active

Weight :

10mg

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Length :

19.96 mm

Number of Terminals :

3

Continuous Drain Current (ID) :

36A

Power Dissipation Ambient-Max :

500 W

Channel Mode :

Enhancement

Tradename :

HyperFET

Lead Free :

Contains Lead

Base Product Number :

IXFK36

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

36 A

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

500 W

Package Shape :

RECTANGULAR

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

Drain-source On Resistance-Max :

0.18ohm

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Pbfree Code :

yes

Current Rating :

36A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

500W Tc

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99

Product Type :

MOSFET

Number of Elements :

1

Power Dissipation (Max) :

500W (Tc)