IXFK36N60
- Mfr.Part #
- IXFK36N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO264AA
- Stock
- 9,820
- In Stock :
- 9,820
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 325nC @ 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Configuration :
- Single
- Brand :
- IXYS
- FET Feature :
- --
- Factory Lead Time :
- 6 Weeks
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Published :
- 1996
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 500mA, 10V
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 60 ns
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 144A
- Threshold Voltage :
- 4.5V
- Package :
- Tube
- Pin Count :
- 3
- Terminal Position :
- Single
- Power Dissipation :
- 500W
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- HTS Code :
- 8541.29.00.95
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Height :
- 26.16 mm
- Rise Time :
- 45ns
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 600 V
- Voltage - Rated DC :
- 600V
- Number of Channels :
- 1 Channel
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 100 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-264
- Drain to Source Voltage (Vdss) :
- 600V
- Manufacturer :
- IXYS
- Width :
- 5.13 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Details
- Product Status :
- Active
- Weight :
- 10mg
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Length :
- 19.96 mm
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 36A
- Power Dissipation Ambient-Max :
- 500 W
- Channel Mode :
- Enhancement
- Tradename :
- HyperFET
- Lead Free :
- Contains Lead
- Base Product Number :
- IXFK36
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 36 A
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 500 W
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HiPerFET™
- Drain-source On Resistance-Max :
- 0.18ohm
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Pbfree Code :
- yes
- Current Rating :
- 36A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 500W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 500W (Tc)
- Datasheets
- IXFK36N60

N-Channel Tube 180m Ω @ 500mA, 10V ±20V 9000pF @ 25V 325nC @ 25V 600V TO-264-3, TO-264AA
IXFK36N60 Overview
The maximum input capacitance of this device is 9000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 36 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 144A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK36N60 Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 144A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IXFK36N60 Applications
There are a lot of IXYS
IXFK36N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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