IXFK36N60
- Mfr.Part #
- IXFK36N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO264AA
- Stock
- 9,820
- In Stock :
- 9,820
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Brand :
- IXYS
- Lead Free :
- Contains Lead
- Rise Time :
- 45ns
- Width :
- 5.13 mm
- Transistor Type :
- 1 N-Channel
- Current Rating :
- 36A
- Terminal Form :
- THROUGH-HOLE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Drain Current-Max (Abs) (ID) :
- 36 A
- Gate Charge (Qg) (Max) @ Vgs :
- 325nC @ 25V
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 500W (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- Published :
- 1996
- Continuous Drain Current (ID) :
- 36A
- Power Dissipation-Max :
- 500W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- HyperFET
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-264
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 60 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 500mA, 10V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Series :
- HiPerFET™
- Configuration :
- Single
- Pbfree Code :
- yes
- FET Feature :
- --
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 26.16 mm
- Pulsed Drain Current-Max (IDM) :
- 144A
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Packaging :
- Tube
- Voltage - Rated DC :
- 600V
- Terminal Position :
- Single
- Power Dissipation-Max (Abs) :
- 500 W
- Base Product Number :
- IXFK36
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Length :
- 19.96 mm
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 500W
- Threshold Voltage :
- 4.5V
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Supplier Device Package :
- TO-264AA (IXFK)
- Product Status :
- Active
- Power Dissipation Ambient-Max :
- 500 W
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.18ohm
- Turn-Off Delay Time :
- 100 ns
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Weight :
- 10mg
- RoHS :
- Details
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- Datasheets
- IXFK36N60

N-Channel Tube 180m Ω @ 500mA, 10V ±20V 9000pF @ 25V 325nC @ 25V 600V TO-264-3, TO-264AA
IXFK36N60 Overview
The maximum input capacitance of this device is 9000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 36 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 144A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK36N60 Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 144A.
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IXFK36N60 Applications
There are a lot of IXYS
IXFK36N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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