IXFK360N10T

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Mfr.Part #
IXFK360N10T
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 360A TO264AA
Stock
22,711
In Stock :
22,711

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 175 C
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
33000pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
360A Tc
Lead Free :
Lead Free
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
100V
Factory Lead Time :
30 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Max Power Dissipation :
1.25 kW
JESD-609 Code :
e1
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
2.9m Ω @ 100A, 10V
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Power Dissipation-Max (Abs) :
1250 W
Power Dissipation-Max :
1250W Tc
Case Connection :
DRAIN
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
ECCN Code :
EAR99
Mount :
Through Hole
Continuous Drain Current (ID) :
360A
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-264AA
Base Product Number :
IXFK360
Rds On Max :
2.9 mΩ
Reach Compliance Code :
Unknown
Rise Time :
100 ns
Input Capacitance :
33 nF
Package Shape :
RECTANGULAR
Tradename :
HiPerFET
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Drain-source On Resistance-Max :
0.0029Ohm
Brand :
IXYS
Mounting Style :
Through Hole
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 3mA
Packaging :
Tube
Package / Case :
TO-264-3, TO-264AA
Power Dissipation (Max) :
1250W (Tc)
Product Type :
MOSFET
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
900A
Drain Current-Max (Abs) (ID) :
360 A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
525nC @ 10V
RoHS :
Details
Terminal Position :
Single
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-264AA (IXFK)
DS Breakdown Voltage-Min :
100V
Avalanche Energy Rating (Eas) :
3000 mJ
Terminal Finish :
TIN SILVER COPPER
Number of Terminations :
3
Pin Count :
3
Published :
2011
Series :
GigaMOS™ HiPerFET™
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Through Hole
Manufacturer :
IXYS
Channel Mode :
Enhancement
Surface Mount :
No
Transistor Type :
1 N-Channel
Datasheets
IXFK360N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK360N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, IXFK360N10T pinout, IXFK360N10T datasheet PDF, IXFK360N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK360N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK360N10T


N-Channel Tube 2.9m Ω @ 100A, 10V ±20V 33000pF @ 25V 525nC @ 10V 100V TO-264-3, TO-264AA

IXFK360N10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 33000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 360 A.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK360N10T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 360A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFK360N10T Applications


There are a lot of IXYS
IXFK360N10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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