IXFK360N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

360 A

JEDEC-95 Code :

TO-264AA

FET Feature :

--

ECCN Code :

EAR99

Factory Lead Time :

30 Weeks

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

360A

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 3mA

RoHS :

Details

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Number of Terminations :

3

Case Connection :

DRAIN

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

360A Tc

Input Capacitance (Ciss) (Max) @ Vds :

33000pF @ 25V

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Max Power Dissipation :

1.25 kW

Mount :

Through Hole

Drain-source On Resistance-Max :

0.0029Ohm

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 100A, 10V

Power Dissipation (Max) :

1250W (Tc)

Avalanche Energy Rating (Eas) :

3000 mJ

Package :

Tube

Mounting Type :

Through Hole

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Supplier Device Package :

TO-264AA (IXFK)

Gate Charge (Qg) (Max) @ Vgs :

525nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max :

1250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

900A

Power Dissipation-Max (Abs) :

1250 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2011

Base Product Number :

IXFK360

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On Max :

2.9 mΩ

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Terminal Position :

Single

Series :

GigaMOS™ HiPerFET™

Number of Channels :

1 Channel

Rise Time :

100 ns

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Number of Terminals :

3

Input Capacitance :

33 nF

Manufacturer :

IXYS

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Maximum Operating Temperature :

+ 175 C

Tradename :

HiPerFET

DS Breakdown Voltage-Min :

100V