IXFK360N10T
- Mfr.Part #
- IXFK360N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 360A TO264AA
- Stock
- 22,711
- In Stock :
- 22,711
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 175 C
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 33000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 360A Tc
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 100V
- Factory Lead Time :
- 30 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Max Power Dissipation :
- 1.25 kW
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 2.9m Ω @ 100A, 10V
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 1250 W
- Power Dissipation-Max :
- 1250W Tc
- Case Connection :
- DRAIN
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 360A
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-264AA
- Base Product Number :
- IXFK360
- Rds On Max :
- 2.9 mΩ
- Reach Compliance Code :
- Unknown
- Rise Time :
- 100 ns
- Input Capacitance :
- 33 nF
- Package Shape :
- RECTANGULAR
- Tradename :
- HiPerFET
- Number of Elements :
- 1
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.0029Ohm
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 3mA
- Packaging :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation (Max) :
- 1250W (Tc)
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 900A
- Drain Current-Max (Abs) (ID) :
- 360 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 525nC @ 10V
- RoHS :
- Details
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-264AA (IXFK)
- DS Breakdown Voltage-Min :
- 100V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 3
- Pin Count :
- 3
- Published :
- 2011
- Series :
- GigaMOS™ HiPerFET™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Transistor Type :
- 1 N-Channel
- Datasheets
- IXFK360N10T

N-Channel Tube 2.9m Ω @ 100A, 10V ±20V 33000pF @ 25V 525nC @ 10V 100V TO-264-3, TO-264AA
IXFK360N10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 33000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 360 A.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK360N10T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 360A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFK360N10T Applications
There are a lot of IXYS
IXFK360N10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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