IXFK360N10T
- Mfr.Part #
- IXFK360N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 360A TO264AA
- Stock
- 22,711
- In Stock :
- 22,711
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 525nC @ 10V
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2011
- Brand :
- IXYS
- Packaging :
- Tube
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 1250W (Tc)
- DS Breakdown Voltage-Min :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 100V
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-264-3, TO-264AA
- Rds On Max :
- 2.9 mΩ
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 1250 W
- Power Dissipation-Max :
- 1250W Tc
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 175 C
- Manufacturer :
- IXYS
- Factory Lead Time :
- 30 Weeks
- Rise Time :
- 100 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Max Power Dissipation :
- 1.25 kW
- Supplier Device Package :
- TO-264AA (IXFK)
- Number of Terminals :
- 3
- Tradename :
- HiPerFET
- JESD-609 Code :
- e1
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Enhancement
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFK360
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 3mA
- Series :
- GigaMOS™ HiPerFET™
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 33000pF @ 25V
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 900A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Input Capacitance :
- 33 nF
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-264AA
- Case Connection :
- DRAIN
- RoHS :
- Details
- Terminal Finish :
- TIN SILVER COPPER
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 2.9m Ω @ 100A, 10V
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0029Ohm
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 360A Tc
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 360A
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 360 A
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXFK360N10T

N-Channel Tube 2.9m Ω @ 100A, 10V ±20V 33000pF @ 25V 525nC @ 10V 100V TO-264-3, TO-264AA
IXFK360N10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 33000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 360 A.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK360N10T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 360A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFK360N10T Applications
There are a lot of IXYS
IXFK360N10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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