IXFK360N10T

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Mfr.Part #
IXFK360N10T
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 360A TO264AA
Stock
22,711
In Stock :
22,711

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
525nC @ 10V
Qualification Status :
Not Qualified
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2011
Brand :
IXYS
Packaging :
Tube
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
1250W (Tc)
DS Breakdown Voltage-Min :
100V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
100V
Product Type :
MOSFET
Product Category :
MOSFET
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-264-3, TO-264AA
Rds On Max :
2.9 mΩ
Pin Count :
3
Power Dissipation-Max (Abs) :
1250 W
Power Dissipation-Max :
1250W Tc
Transistor Application :
SWITCHING
Mount :
Through Hole
Maximum Operating Temperature :
+ 175 C
Manufacturer :
IXYS
Factory Lead Time :
30 Weeks
Rise Time :
100 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Max Power Dissipation :
1.25 kW
Supplier Device Package :
TO-264AA (IXFK)
Number of Terminals :
3
Tradename :
HiPerFET
JESD-609 Code :
e1
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Configuration :
SINGLE WITH BUILT-IN DIODE
Package :
Tube
Transistor Polarity :
N-Channel
Base Product Number :
IXFK360
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 3mA
Series :
GigaMOS™ HiPerFET™
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
33000pF @ 25V
Vgs (Max) :
±20V
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
900A
Avalanche Energy Rating (Eas) :
3000 mJ
Input Capacitance :
33 nF
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
JEDEC-95 Code :
TO-264AA
Case Connection :
DRAIN
RoHS :
Details
Terminal Finish :
TIN SILVER COPPER
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
2.9m Ω @ 100A, 10V
Mounting Style :
Through Hole
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.0029Ohm
Number of Channels :
1 Channel
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
360A Tc
FET Feature :
--
Continuous Drain Current (ID) :
360A
Product Status :
Active
Drain Current-Max (Abs) (ID) :
360 A
Minimum Operating Temperature :
- 55 C
Datasheets
IXFK360N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK360N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFK360N10T pinout, IXFK360N10T datasheet PDF, IXFK360N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK360N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK360N10T


N-Channel Tube 2.9m Ω @ 100A, 10V ±20V 33000pF @ 25V 525nC @ 10V 100V TO-264-3, TO-264AA

IXFK360N10T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 33000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 360 A.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK360N10T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 360A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFK360N10T Applications


There are a lot of IXYS
IXFK360N10T applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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