IXFK35N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

2500 mJ

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

416W (Tc)

Turn-Off Delay Time :

110 ns

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

140A

Gate Charge (Qg) (Max) @ Vgs :

227nC @ 10V

Drain Current-Max (Abs) (ID) :

35 A

Case Connection :

DRAIN

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500 V

Base Product Number :

IXFK35

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

416W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2000

Surface Mount :

No

Pin Count :

3

Drain-source On Resistance-Max :

0.15Ohm

Element Configuration :

Single

Number of Terminals :

3

Supplier Device Package :

TO-264AA (IXFK)

Max Power Dissipation :

416 W

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Fall Time (Typ) :

23 ns

JEDEC-95 Code :

TO-264

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

500V

Package :

Tube

RoHS :

Compliant

Package Shape :

RECTANGULAR

Packaging :

Tube

Power Dissipation :

416W

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

500V

Input Capacitance :

5.7 nF

Transistor Element Material :

SILICON

Series :

HiPerFET™

Rds On (Max) @ Id, Vgs :

150m Ω @ 16.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Package / Case :

TO-264-3, TO-264AA

Vgs(th) (Max) @ Id :

4V @ 4mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS Corporation

Rise Time :

42ns

Number of Pins :

3

Reach Compliance Code :

Compliant

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Drain to Source Resistance :

150 mΩ

Product Status :

Obsolete

Power Dissipation-Max (Abs) :

416 W

Rds On Max :

150 mΩ

FET Type :

N-Channel

Continuous Drain Current (ID) :

35A

Vgs (Max) :

±20V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)