IXFK35N50

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Mfr.Part #
IXFK35N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 35A TO264AA
Stock
38,163
In Stock :
38,163

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-264-3, TO-264AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.15Ohm
Pin Count :
3
Avalanche Energy Rating (Eas) :
2500 mJ
JEDEC-95 Code :
TO-264
Rds On Max :
150 mΩ
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Max Power Dissipation :
416 W
Power Dissipation-Max (Abs) :
416 W
Continuous Drain Current (ID) :
35A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
227nC @ 10V
RoHS Status :
RoHS Compliant
Package :
Tube
Surface Mount :
No
Drain to Source Resistance :
150 mΩ
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
500V
Manufacturer :
IXYS Corporation
Number of Elements :
1
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55 °C
Published :
2000
Series :
HiPerFET™
Vgs(th) (Max) @ Id :
4V @ 4mA
Drain Current-Max (Abs) (ID) :
35 A
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED
DS Breakdown Voltage-Min :
500 V
Number of Terminations :
3
Power Dissipation (Max) :
416W (Tc)
Packaging :
Tube
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
150m Ω @ 16.5A, 10V
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
140A
Transistor Application :
SWITCHING
Element Configuration :
Single
Number of Pins :
3
Fall Time (Typ) :
23 ns
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
35A Tc
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Mount :
Through Hole
RoHS :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
5700pF @ 25V
Transistor Element Material :
SILICON
Supplier Device Package :
TO-264AA (IXFK)
Turn-Off Delay Time :
110 ns
Terminal Position :
Single
Drain to Source Breakdown Voltage :
500V
Base Product Number :
IXFK35
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
416W Tc
Rise Time :
42ns
Input Capacitance :
5.7 nF
Power Dissipation :
416W
Max Operating Temperature :
150 °C
Datasheets
IXFK35N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK35N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, IXFK35N50 pinout, IXFK35N50 datasheet PDF, IXFK35N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK35N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK35N50


N-Channel Tube 150m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA

IXFK35N50 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 5700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 35 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 150 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK35N50 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 140A.
single MOSFETs transistor is 150 mΩ
a 500V drain to source voltage (Vdss)


IXFK35N50 Applications


There are a lot of IXYS
IXFK35N50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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