IXFK35N50
- Mfr.Part #
- IXFK35N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 35A TO264AA
- Stock
- 38,163
- In Stock :
- 38,163
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 35 A
- Drain to Source Voltage (Vdss) :
- 500V
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-264-3, TO-264AA
- Number of Terminations :
- 3
- Product Status :
- Obsolete
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Drain-source On Resistance-Max :
- 0.15Ohm
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 416W
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Min Operating Temperature :
- -55 °C
- Series :
- HiPerFET™
- Manufacturer :
- IXYS Corporation
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 227nC @ 10V
- Mounting Type :
- Through Hole
- Rise Time :
- 42ns
- Power Dissipation-Max (Abs) :
- 416 W
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Fall Time (Typ) :
- 23 ns
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 416W Tc
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-264AA (IXFK)
- FET Type :
- N-Channel
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Max Power Dissipation :
- 416 W
- Drain to Source Resistance :
- 150 mΩ
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 16.5A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 35A
- Rds On Max :
- 150 mΩ
- Power Dissipation (Max) :
- 416W (Tc)
- Turn-Off Delay Time :
- 110 ns
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- Input Capacitance :
- 5.7 nF
- JEDEC-95 Code :
- TO-264
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 140A
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2000
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- RoHS :
- Compliant
- Number of Elements :
- 1
- Base Product Number :
- IXFK35
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- DS Breakdown Voltage-Min :
- 500 V
- Datasheets
- IXFK35N50

N-Channel Tube 150m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA
IXFK35N50 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 5700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 35 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 150 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK35N50 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 140A.
single MOSFETs transistor is 150 mΩ
a 500V drain to source voltage (Vdss)
IXFK35N50 Applications
There are a lot of IXYS
IXFK35N50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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