IXFK35N50

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Mfr.Part #
IXFK35N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 35A TO264AA
Stock
38,163
In Stock :
38,163

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
35 A
Drain to Source Voltage (Vdss) :
500V
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-264-3, TO-264AA
Number of Terminations :
3
Product Status :
Obsolete
Element Configuration :
Single
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Drain-source On Resistance-Max :
0.15Ohm
Vgs (Max) :
±20V
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Power Dissipation :
416W
Input Capacitance (Ciss) (Max) @ Vds :
5700pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Min Operating Temperature :
-55 °C
Series :
HiPerFET™
Manufacturer :
IXYS Corporation
Drain to Source Breakdown Voltage :
500V
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
227nC @ 10V
Mounting Type :
Through Hole
Rise Time :
42ns
Power Dissipation-Max (Abs) :
416 W
Avalanche Energy Rating (Eas) :
2500 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Fall Time (Typ) :
23 ns
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
416W Tc
Pbfree Code :
yes
Supplier Device Package :
TO-264AA (IXFK)
FET Type :
N-Channel
Surface Mount :
No
Case Connection :
DRAIN
Max Power Dissipation :
416 W
Drain to Source Resistance :
150 mΩ
Rds On (Max) @ Id, Vgs :
150m Ω @ 16.5A, 10V
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
35A
Rds On Max :
150 mΩ
Power Dissipation (Max) :
416W (Tc)
Turn-Off Delay Time :
110 ns
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Input Capacitance :
5.7 nF
JEDEC-95 Code :
TO-264
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
140A
Package :
Tube
Transistor Application :
SWITCHING
Mount :
Through Hole
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2000
Terminal Form :
THROUGH-HOLE
RoHS Status :
RoHS Compliant
Qualification Status :
Not Qualified
Terminal Position :
Single
RoHS :
Compliant
Number of Elements :
1
Base Product Number :
IXFK35
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
4V @ 4mA
DS Breakdown Voltage-Min :
500 V
Datasheets
IXFK35N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK35N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK35N50 pinout, IXFK35N50 datasheet PDF, IXFK35N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK35N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK35N50


N-Channel Tube 150m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA

IXFK35N50 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 5700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 35 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 150 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK35N50 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 140A.
single MOSFETs transistor is 150 mΩ
a 500V drain to source voltage (Vdss)


IXFK35N50 Applications


There are a lot of IXYS
IXFK35N50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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