IXFK34N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFK34

Number of Pins :

3

Package / Case :

TO-264-3, TO-264AA

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

5V @ 8mA

Pbfree Code :

yes

Case Connection :

DRAIN

Rise Time :

45ns

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HiPerFET™

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

40 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

240m Ω @ 17A, 10V

Drain to Source Voltage (Vdss) :

800V

Published :

2000

Width :

5.13 mm

Supplier Device Package :

TO-264AA (IXFK)

Continuous Drain Current (ID) :

34A

Current Rating :

34A

Recovery Time :

250 ns

Element Configuration :

Single

Number of Elements :

1

Height :

26.16 mm

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Voltage - Rated DC :

800V

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Product Status :

Not For New Designs

Tradename :

HyperFET

Length :

19.96 mm

Turn-Off Delay Time :

100 ns

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Pin Count :

3

Brand :

IXYS

Lead Free :

Lead Free

Power Dissipation :

560W

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Channel Mode :

Enhancement

RoHS Status :

RoHS Compliant

Configuration :

Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Package :

Tube

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Factory Lead Time :

8 Weeks

Mount :

Through Hole

Power Dissipation (Max) :

560W (Tc)

Power Dissipation-Max :

560W Tc

Resistance :

240mOhm

Product Category :

MOSFET