IXFK33N50

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Mfr.Part #
IXFK33N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 33A TO264AA
Stock
9,273
In Stock :
9,273

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Avalanche Energy Rating (Eas) :
2500 mJ
Terminal Form :
THROUGH-HOLE
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Rise Time :
42ns
Package / Case :
TO-264-3, TO-264AA
JEDEC-95 Code :
TO-264
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
416W Tc
Mount :
Through Hole
DS Breakdown Voltage-Min :
500 V
Pin Count :
3
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Packaging :
Tube
Number of Terminals :
3
Manufacturer :
IXYS Corporation
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
33A Tc
Rds On (Max) @ Id, Vgs :
160m Ω @ 16.5A, 10V
Lead Free :
Lead Free
Number of Terminations :
3
Transistor Element Material :
SILICON
Supplier Device Package :
TO-264AA (IXFK)
Turn-Off Delay Time :
110 ns
Fall Time (Typ) :
23 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5700pF @ 25V
Terminal Position :
Single
Drain to Source Breakdown Voltage :
500V
Drain Current-Max (Abs) (ID) :
33 A
Base Product Number :
IXFK33
Transistor Application :
SWITCHING
Number of Pins :
3
Drain-source On Resistance-Max :
0.16 Ω
Drain to Source Voltage (Vdss) :
500V
Series :
HiPerFET™
JESD-30 Code :
R-PSFM-T3
Published :
2000
Pulsed Drain Current-Max (IDM) :
132 A
Power Dissipation :
416W
Package :
Tube
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
416W (Tc)
Surface Mount :
No
FET Feature :
--
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Radiation Hardening :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Resistance :
150mOhm
Gate Charge (Qg) (Max) @ Vgs :
227nC @ 10V
Product Status :
Obsolete
Continuous Drain Current (ID) :
33A
Power Dissipation-Max (Abs) :
416 W
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFK33N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK33N50 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IXFK33N50 pinout, IXFK33N50 datasheet PDF, IXFK33N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK33N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK33N50


N-Channel Tube 160m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA

IXFK33N50 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5700pF @ 25V.This device conducts a continuous drain current (ID) of 33A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 33 A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 132 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK33N50 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)


IXFK33N50 Applications


There are a lot of IXYS
IXFK33N50 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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