IXFK33N50
- Mfr.Part #
- IXFK33N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 33A TO264AA
- Stock
- 9,273
- In Stock :
- 9,273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-264
- Series :
- HiPerFET™
- FET Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 416 W
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Lead Free :
- Lead Free
- Rise Time :
- 42ns
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Resistance :
- 150mOhm
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-264-3, TO-264AA
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 33A
- Fall Time (Typ) :
- 23 ns
- Drain-source On Resistance-Max :
- 0.16 Ω
- Published :
- 2000
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Drain Current-Max (Abs) (ID) :
- 33 A
- Element Configuration :
- Single
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 227nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 132 A
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-264AA (IXFK)
- Base Product Number :
- IXFK33
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 110 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- Power Dissipation (Max) :
- 416W (Tc)
- Power Dissipation :
- 416W
- Drain to Source Breakdown Voltage :
- 500V
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS Corporation
- Mount :
- Through Hole
- Power Dissipation-Max :
- 416W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 16.5A, 10V
- DS Breakdown Voltage-Min :
- 500 V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Terminals :
- 3
- Datasheets
- IXFK33N50

N-Channel Tube 160m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA
IXFK33N50 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5700pF @ 25V.This device conducts a continuous drain current (ID) of 33A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 33 A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 132 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK33N50 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)
IXFK33N50 Applications
There are a lot of IXYS
IXFK33N50 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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