IXFK33N50
- Mfr.Part #
- IXFK33N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 33A TO264AA
- Stock
- 9,273
- In Stock :
- 9,273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 42ns
- Package / Case :
- TO-264-3, TO-264AA
- JEDEC-95 Code :
- TO-264
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 416W Tc
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 500 V
- Pin Count :
- 3
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Number of Terminals :
- 3
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 16.5A, 10V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-264AA (IXFK)
- Turn-Off Delay Time :
- 110 ns
- Fall Time (Typ) :
- 23 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Drain Current-Max (Abs) (ID) :
- 33 A
- Base Product Number :
- IXFK33
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.16 Ω
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- HiPerFET™
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2000
- Pulsed Drain Current-Max (IDM) :
- 132 A
- Power Dissipation :
- 416W
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 416W (Tc)
- Surface Mount :
- No
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Resistance :
- 150mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 227nC @ 10V
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 33A
- Power Dissipation-Max (Abs) :
- 416 W
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXFK33N50

N-Channel Tube 160m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA
IXFK33N50 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5700pF @ 25V.This device conducts a continuous drain current (ID) of 33A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 33 A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 132 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK33N50 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)
IXFK33N50 Applications
There are a lot of IXYS
IXFK33N50 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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