IXFK32N90P
- Mfr.Part #
- IXFK32N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 32A TO264AA
- Stock
- 8,067
- In Stock :
- 8,067
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Factory Lead Time :
- 26 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Mounting Style :
- Through Hole
- Published :
- 2011
- Supplier Device Package :
- TO-264AA (IXFK)
- JESD-30 Code :
- R-PSFM-T3
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-264-3, TO-264AA
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PolarHT™ HiPerFET™
- DS Breakdown Voltage-Min :
- 900V
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 900V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.3Ohm
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 16A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Drain Current-Max (Abs) (ID) :
- 32 A
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Power Dissipation-Max (Abs) :
- 960 W
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 32A
- JEDEC-95 Code :
- TO-264AA
- Power Dissipation (Max) :
- 960W (Tc)
- Power Dissipation-Max :
- 960W Tc
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 80A
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 10600pF @ 25V
- Base Product Number :
- IXFK32
- Number of Terminations :
- 3
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Datasheets
- IXFK32N90P

N-Channel Tube 300m Ω @ 16A, 10V ±30V 10600pF @ 25V 215nC @ 10V 900V TO-264-3, TO-264AA
IXFK32N90P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 10600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK32N90P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 80A.
a 900V drain to source voltage (Vdss)
IXFK32N90P Applications
There are a lot of IXYS
IXFK32N90P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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