IXFK32N90P
- Mfr.Part #
- IXFK32N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 32A TO264AA
- Stock
- 8,067
- In Stock :
- 8,067
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 32 A
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXFK32
- Mount :
- Through Hole
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 900V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-264AA (IXFK)
- Published :
- 2011
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.3Ohm
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- FET Feature :
- --
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 26 Weeks
- Drain to Source Voltage (Vdss) :
- 900V
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 10600pF @ 25V
- Number of Channels :
- 1 Channel
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max (Abs) :
- 960 W
- Power Dissipation (Max) :
- 960W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 16A, 10V
- Number of Elements :
- 1
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS Corporation
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Series :
- PolarHT™ HiPerFET™
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 80A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-264AA
- Continuous Drain Current (ID) :
- 32A
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 960W Tc
- Datasheets
- IXFK32N90P

N-Channel Tube 300m Ω @ 16A, 10V ±30V 10600pF @ 25V 215nC @ 10V 900V TO-264-3, TO-264AA
IXFK32N90P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 10600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK32N90P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 80A.
a 900V drain to source voltage (Vdss)
IXFK32N90P Applications
There are a lot of IXYS
IXFK32N90P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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