IXFK32N80Q3

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Mfr.Part #
IXFK32N80Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 32A TO264AA
Stock
450
In Stock :
450

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
3000 mJ
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Transistor Polarity :
N-Channel
Number of Elements :
1
Vgs (Max) :
±30V
Number of Terminations :
3
Tradename :
HiPerFET
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
FET Feature :
--
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Surface Mount :
No
JEDEC-95 Code :
TO-264AA
Product Category :
MOSFET
Power Dissipation-Max :
1000W Tc
Transistor Type :
1 N-Channel
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Transistor Application :
SWITCHING
Power Dissipation :
1kW
Additional Feature :
AVALANCHE RATED
Series :
HiPerFET™
FET Type :
N-Channel
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
80A
Rise Time :
300ns
JESD-30 Code :
R-PSFM-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Length :
19.96mm
Drain-source On Resistance-Max :
0.27Ohm
Drain to Source Voltage (Vdss) :
800V
Terminal Position :
Single
Maximum Operating Temperature :
+ 150 C
Height :
26.16mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Continuous Drain Current (ID) :
32A
Transistor Element Material :
SILICON
Supplier Device Package :
TO-264AA (IXFK)
Turn-Off Delay Time :
45 ns
DS Breakdown Voltage-Min :
800 V
Published :
2005
Factory Lead Time :
30 Weeks
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
32 A
Package / Case :
TO-264-3, TO-264AA
Turn On Delay Time :
38 ns
Power Dissipation (Max) :
1000W (Tc)
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Drain to Source Breakdown Voltage :
800V
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
270m Ω @ 16A, 10V
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXFK32
Element Configuration :
Single
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
6940pF @ 25V
Package :
Tube
Product Status :
Active
Power Dissipation-Max (Abs) :
1000 W
Width :
5.13mm
Manufacturer :
IXYS
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Pin Count :
3
Datasheets
IXFK32N80Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N80Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, IXFK32N80Q3 pinout, IXFK32N80Q3 datasheet PDF, IXFK32N80Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N80Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N80Q3


N-Channel Tube 270m Ω @ 16A, 10V ±30V 6940pF @ 25V 140nC @ 10V 800V TO-264-3, TO-264AA

IXFK32N80Q3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6940pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.There is no drain current on this device since the maximum continuous current it can conduct is 32 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 38 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK32N80Q3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)


IXFK32N80Q3 Applications


There are a lot of IXYS
IXFK32N80Q3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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