IXFK32N80Q3

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Mfr.Part #
IXFK32N80Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 800V 32A TO264AA
Stock
450
In Stock :
450

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.27Ohm
Power Dissipation (Max) :
1000W (Tc)
Vgs (Max) :
±30V
Number of Channels :
1 Channel
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Drain to Source Breakdown Voltage :
800V
Drain Current-Max (Abs) (ID) :
32 A
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Product Category :
MOSFET
Transistor Element Material :
SILICON
Width :
5.13mm
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
RoHS :
Details
Package :
Tube
Series :
HiPerFET™
Product Type :
MOSFET
Package / Case :
TO-264-3, TO-264AA
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Drain to Source Voltage (Vdss) :
800V
Manufacturer :
IXYS
Rise Time :
300ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Length :
19.96mm
Power Dissipation :
1kW
Surface Mount :
No
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Continuous Drain Current (ID) :
32A
JESD-30 Code :
R-PSFM-T3
Published :
2005
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
800 V
Configuration :
Single
Rds On (Max) @ Id, Vgs :
270m Ω @ 16A, 10V
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
6940pF @ 25V
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
30 Weeks
Supplier Device Package :
TO-264AA (IXFK)
Turn-Off Delay Time :
45 ns
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
1000W Tc
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
80A
Power Dissipation-Max (Abs) :
1000 W
Base Product Number :
IXFK32
Mount :
Through Hole
JEDEC-95 Code :
TO-264AA
Avalanche Energy Rating (Eas) :
3000 mJ
Pin Count :
3
Polarity/Channel Type :
N-Channel
Turn On Delay Time :
38 ns
Mounting Type :
Through Hole
Number of Pins :
3
Packaging :
Tube
Height :
26.16mm
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Number of Terminals :
3
Datasheets
IXFK32N80Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N80Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXFK32N80Q3 pinout, IXFK32N80Q3 datasheet PDF, IXFK32N80Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N80Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N80Q3


N-Channel Tube 270m Ω @ 16A, 10V ±30V 6940pF @ 25V 140nC @ 10V 800V TO-264-3, TO-264AA

IXFK32N80Q3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6940pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.There is no drain current on this device since the maximum continuous current it can conduct is 32 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 38 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK32N80Q3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)


IXFK32N80Q3 Applications


There are a lot of IXYS
IXFK32N80Q3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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