IXFK32N80Q3
- Mfr.Part #
- IXFK32N80Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 32A TO264AA
- Stock
- 450
- In Stock :
- 450
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.27Ohm
- Power Dissipation (Max) :
- 1000W (Tc)
- Vgs (Max) :
- ±30V
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Drain to Source Breakdown Voltage :
- 800V
- Drain Current-Max (Abs) (ID) :
- 32 A
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Width :
- 5.13mm
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- RoHS :
- Details
- Package :
- Tube
- Series :
- HiPerFET™
- Product Type :
- MOSFET
- Package / Case :
- TO-264-3, TO-264AA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 800V
- Manufacturer :
- IXYS
- Rise Time :
- 300ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Length :
- 19.96mm
- Power Dissipation :
- 1kW
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Continuous Drain Current (ID) :
- 32A
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2005
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 800 V
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 16A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6940pF @ 25V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 30 Weeks
- Supplier Device Package :
- TO-264AA (IXFK)
- Turn-Off Delay Time :
- 45 ns
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 1000W Tc
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 80A
- Power Dissipation-Max (Abs) :
- 1000 W
- Base Product Number :
- IXFK32
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-264AA
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Turn On Delay Time :
- 38 ns
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Packaging :
- Tube
- Height :
- 26.16mm
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- Number of Terminals :
- 3
- Datasheets
- IXFK32N80Q3

N-Channel Tube 270m Ω @ 16A, 10V ±30V 6940pF @ 25V 140nC @ 10V 800V TO-264-3, TO-264AA
IXFK32N80Q3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6940pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.There is no drain current on this device since the maximum continuous current it can conduct is 32 A.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 38 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK32N80Q3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a 800V drain to source voltage (Vdss)
IXFK32N80Q3 Applications
There are a lot of IXYS
IXFK32N80Q3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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