IXFK32N60
- Mfr.Part #
- IXFK32N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 32A TO264AA
- Stock
- 48,215
- In Stock :
- 48,215
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Element Configuration :
- Single
- Height :
- 26.16 mm
- Tradename :
- HyperFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 500mA, 10V
- Surface Mount :
- No
- Published :
- 1996
- Continuous Drain Current (ID) :
- 32A
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFK32
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 100 ns
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 500 W
- Package / Case :
- TO-264-3, TO-264AA
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- FET Feature :
- --
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 60 ns
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 500W Tc
- Reach Compliance Code :
- Compliant
- Rise Time :
- 45ns
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 32 A
- FET Type :
- N-Channel
- Series :
- HiPerFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 325nC @ 10V
- Length :
- 19.96 mm
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Drain-source On Resistance-Max :
- 0.15Ohm
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Width :
- 5.13 mm
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 128A
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 500W (Tc)
- Product Status :
- Active
- DS Breakdown Voltage-Min :
- 600 V
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-264
- Supplier Device Package :
- TO-264AA (IXFK)
- Mount :
- Through Hole
- Power Dissipation :
- 500W
- Product Type :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Datasheets
- IXFK32N60

N-Channel Tube 250m Ω @ 500mA, 10V ±20V 9000pF @ 25V 325nC @ 10V 600V TO-264-3, TO-264AA
IXFK32N60 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9000pF @ 25V.This device has a continuous drain current (ID) of [32A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 32 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 128A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFK32N60 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 128A.
a 600V drain to source voltage (Vdss)
IXFK32N60 Applications
There are a lot of IXYS
IXFK32N60 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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