IXFK32N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Case Connection :

DRAIN

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-264

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

600V

Configuration :

Single

Manufacturer :

IXYS

Terminal Position :

Single

Brand :

IXYS

Pin Count :

3

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

20V

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

128A

Vgs (Max) :

±20V

Number of Elements :

1

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

100 ns

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

Pbfree Code :

yes

Power Dissipation (Max) :

500W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.15Ohm

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

FET Type :

N-Channel

Rise Time :

45ns

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Product Type :

MOSFET

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

Compliant

Channel Mode :

Enhancement

Power Dissipation :

500W

Drain Current-Max (Abs) (ID) :

32 A

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Power Dissipation-Max (Abs) :

500 W

Tradename :

HyperFET

Product Category :

MOSFET

DS Breakdown Voltage-Min :

600 V

Height :

26.16 mm

RoHS :

Details

Operating Mode :

ENHANCEMENT MODE

Width :

5.13 mm

FET Feature :

--

Continuous Drain Current (ID) :

32A

Rds On (Max) @ Id, Vgs :

250m Ω @ 500mA, 10V

Transistor Type :

1 N-Channel

Length :

19.96 mm

Base Product Number :

IXFK32

Fall Time (Typ) :

60 ns

Transistor Polarity :

N-Channel

Power Dissipation-Max :

500W Tc

Maximum Operating Temperature :

+ 150 C

Published :

1996

Supplier Device Package :

TO-264AA (IXFK)