IXFK32N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

60 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Channel Mode :

Enhancement

Product Status :

Active

Power Dissipation (Max) :

500W (Tc)

Rds On (Max) @ Id, Vgs :

250m Ω @ 500mA, 10V

Number of Terminals :

3

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Number of Channels :

1 Channel

FET Feature :

--

Packaging :

Tube

Product Category :

MOSFET

Continuous Drain Current (ID) :

32A

DS Breakdown Voltage-Min :

600 V

Turn-Off Delay Time :

100 ns

Power Dissipation :

500W

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Published :

1996

Additional Feature :

AVALANCHE RATED

Length :

19.96 mm

Base Product Number :

IXFK32

Width :

5.13 mm

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HiPerFET™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

325nC @ 10V

Qualification Status :

Not Qualified

Configuration :

Single

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Height :

26.16 mm

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-264AA (IXFK)

Brand :

IXYS

RoHS :

Details

Surface Mount :

No

Package / Case :

TO-264-3, TO-264AA

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Mounting Style :

Through Hole

Power Dissipation-Max (Abs) :

500 W

Transistor Type :

1 N-Channel

Power Dissipation-Max :

500W Tc

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

32 A

Tradename :

HyperFET

Element Configuration :

Single

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Number of Terminations :

3

Product Type :

MOSFET

FET Type :

N-Channel

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-264

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.15Ohm

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

128A

Number of Elements :

1

Rise Time :

45ns

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Terminal Position :

Single

Mounting Type :

Through Hole