IXFK32N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn-Off Delay Time :

75 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Terminal Position :

Single

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Length :

19.96mm

Series :

HiPerFET™

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1500 mJ

Packaging :

Tube

Power Dissipation-Max :

416W Tc

FET Feature :

--

Pbfree Code :

yes

Pin Count :

3

Drain Current-Max (Abs) (ID) :

32 A

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Number of Pins :

3

Base Product Number :

IXFK32

Case Connection :

DRAIN

Power Dissipation :

416W

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Rds On (Max) @ Id, Vgs :

160m Ω @ 16A, 10V

Turn On Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Drain to Source Voltage (Vdss) :

500V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-264AA

Vgs (Max) :

±20V

Manufacturer :

IXYS Corporation

Supplier Device Package :

TO-264AA (IXFK)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

26.16mm

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

128A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation (Max) :

416W (Tc)

FET Type :

N-Channel

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Status :

Obsolete

Fall Time (Typ) :

20 ns

Drain-source On Resistance-Max :

0.15Ohm

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3950pF @ 25V

RoHS Status :

RoHS Compliant

Width :

5.13mm

Rise Time :

42ns

Power Dissipation-Max (Abs) :

416 W

Drain to Source Breakdown Voltage :

500V

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Surface Mount :

No

Published :

2004

Continuous Drain Current (ID) :

32A

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V