IXFK32N50Q

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Mfr.Part #
IXFK32N50Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 32A TO264AA
Stock
2,046
In Stock :
2,046

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
32 A
Continuous Drain Current (ID) :
32A
Drain to Source Breakdown Voltage :
500V
FET Feature :
--
Power Dissipation-Max :
416W Tc
Number of Pins :
3
Power Dissipation-Max (Abs) :
416 W
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation (Max) :
416W (Tc)
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
128A
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation :
416W
Vgs (Max) :
±20V
Mount :
Through Hole
Width :
5.13mm
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-264AA (IXFK)
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
DS Breakdown Voltage-Min :
500 V
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
75 ns
Drain-source On Resistance-Max :
0.15Ohm
Pbfree Code :
yes
Package :
Tube
Terminal Position :
Single
Rise Time :
42ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Fall Time (Typ) :
20 ns
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
JEDEC-95 Code :
TO-264AA
Published :
2004
Rds On (Max) @ Id, Vgs :
160m Ω @ 16A, 10V
Element Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Drain to Source Voltage (Vdss) :
500V
Length :
19.96mm
JESD-30 Code :
R-PSFM-T3
Turn On Delay Time :
35 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Number of Terminations :
3
Qualification Status :
Not Qualified
Height :
26.16mm
Base Product Number :
IXFK32
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Obsolete
Manufacturer :
IXYS Corporation
Datasheets
IXFK32N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFK32N50Q pinout, IXFK32N50Q datasheet PDF, IXFK32N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N50Q


N-Channel Tube 160m Ω @ 16A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-264-3, TO-264AA

IXFK32N50Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 128A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK32N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)


IXFK32N50Q Applications


There are a lot of IXYS
IXFK32N50Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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