IXFK32N50Q
- Mfr.Part #
- IXFK32N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO264AA
- Stock
- 2,046
- In Stock :
- 2,046
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 75 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2004
- Height :
- 26.16mm
- Rise Time :
- 42ns
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 16A, 10V
- Drain to Source Voltage (Vdss) :
- 500V
- JEDEC-95 Code :
- TO-264AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- TO-264AA (IXFK)
- Pbfree Code :
- yes
- Length :
- 19.96mm
- Fall Time (Typ) :
- 20 ns
- Pin Count :
- 3
- Base Product Number :
- IXFK32
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 128A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Product Status :
- Obsolete
- Power Dissipation-Max (Abs) :
- 416 W
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Power Dissipation (Max) :
- 416W (Tc)
- Turn On Delay Time :
- 35 ns
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.15Ohm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Power Dissipation-Max :
- 416W Tc
- Package / Case :
- TO-264-3, TO-264AA
- Continuous Drain Current (ID) :
- 32A
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Width :
- 5.13mm
- Power Dissipation :
- 416W
- FET Feature :
- --
- Drain Current-Max (Abs) (ID) :
- 32 A
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Series :
- HiPerFET™
- Datasheets
- IXFK32N50Q

N-Channel Tube 160m Ω @ 16A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-264-3, TO-264AA
IXFK32N50Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 128A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK32N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)
IXFK32N50Q Applications
There are a lot of IXYS
IXFK32N50Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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