IXFK32N50Q

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Mfr.Part #
IXFK32N50Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 32A TO264AA
Stock
2,046
In Stock :
2,046

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Turn-Off Delay Time :
75 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2004
Height :
26.16mm
Rise Time :
42ns
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
160m Ω @ 16A, 10V
Drain to Source Voltage (Vdss) :
500V
JEDEC-95 Code :
TO-264AA
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Number of Elements :
1
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
500V
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
Supplier Device Package :
TO-264AA (IXFK)
Pbfree Code :
yes
Length :
19.96mm
Fall Time (Typ) :
20 ns
Pin Count :
3
Base Product Number :
IXFK32
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
128A
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
Product Status :
Obsolete
Power Dissipation-Max (Abs) :
416 W
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Power Dissipation (Max) :
416W (Tc)
Turn On Delay Time :
35 ns
Packaging :
Tube
Drain-source On Resistance-Max :
0.15Ohm
Avalanche Energy Rating (Eas) :
1500 mJ
Package :
Tube
Package Shape :
RECTANGULAR
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Power Dissipation-Max :
416W Tc
Package / Case :
TO-264-3, TO-264AA
Continuous Drain Current (ID) :
32A
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Width :
5.13mm
Power Dissipation :
416W
FET Feature :
--
Drain Current-Max (Abs) (ID) :
32 A
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Series :
HiPerFET™
Datasheets
IXFK32N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFK32N50Q pinout, IXFK32N50Q datasheet PDF, IXFK32N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N50Q


N-Channel Tube 160m Ω @ 16A, 10V ±20V 3950pF @ 25V 150nC @ 10V 500V TO-264-3, TO-264AA

IXFK32N50Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 128A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFK32N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)


IXFK32N50Q Applications


There are a lot of IXYS
IXFK32N50Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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