IXFK32N100Q3
- Mfr.Part #
- IXFK32N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 32A TO264AA
- Stock
- 7,551
- In Stock :
- 7,551
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 1000 V
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- +150 °C
- Drain to Source Voltage (Vdss) :
- 1000V
- FET Feature :
- --
- Product Category :
- MOSFET
- Base Product Number :
- IXFK32
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Rise Time :
- 250ns
- Height :
- 26.16mm
- Supplier Device Package :
- TO-264AA (IXFK)
- Packaging :
- Tube
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 16A, 10V
- Channel Type :
- N
- Mounting Style :
- Through Hole
- Surface Mount :
- No
- Turn-Off Delay Time :
- 54 ns
- Power Dissipation :
- 1.25kW
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 96A
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 1kV
- Length :
- 19.96mm
- Package Type :
- TO-264
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 1250 W
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 1250W (Tc)
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-264AA
- Drain Current-Max (Abs) (ID) :
- 32 A
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Power Dissipation-Max :
- 1250W Tc
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Drain-source On Resistance-Max :
- 0.32 Ω
- Reach Compliance Code :
- Compliant
- Product Status :
- Active
- Minimum Operating Temperature :
- -55 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 9940pF @ 25V
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 20 Weeks
- FET Type :
- N-Channel
- Number of Elements per Chip :
- 1
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Width :
- 5.13mm
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 45 ns
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 32A
- Datasheets
- IXFK32N100Q3

N-Channel Tube 320m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA
IXFK32N100Q3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9940pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 32 A.When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK32N100Q3 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)
IXFK32N100Q3 Applications
There are a lot of IXYS
IXFK32N100Q3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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