IXFK32N100Q3

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Mfr.Part #
IXFK32N100Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 32A TO264AA
Stock
7,551
In Stock :
7,551

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
1.25kW
Rise Time :
250ns
Power Dissipation-Max :
1250W Tc
Pulsed Drain Current-Max (IDM) :
96A
Case Connection :
DRAIN
FET Feature :
--
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Turn On Delay Time :
45 ns
RoHS :
Details
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Configuration :
Single
Terminal Position :
Single
Minimum Operating Temperature :
-55 °C
Tradename :
HiPerFET
JEDEC-95 Code :
TO-264AA
Surface Mount :
No
Transistor Type :
1 N-Channel
Product Status :
Active
Manufacturer :
IXYS
Product Type :
MOSFET
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Package :
Tube
Reach Compliance Code :
Compliant
Package / Case :
TO-264-3, TO-264AA
Lead Free :
Lead Free
Base Product Number :
IXFK32
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Pin Count :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
1000V
Power Dissipation-Max (Abs) :
1250 W
Channel Type :
N
Drain to Source Breakdown Voltage :
1kV
Packaging :
Tube
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
9940pF @ 25V
Qualification Status :
Not Qualified
Height :
26.16mm
Brand :
IXYS
DS Breakdown Voltage-Min :
1000 V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
32 A
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Number of Elements per Chip :
1
Factory Lead Time :
20 Weeks
Length :
19.96mm
Mount :
Through Hole
Series :
HiPerFET™
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Power Dissipation (Max) :
1250W (Tc)
Supplier Device Package :
TO-264AA (IXFK)
Mounting Style :
Through Hole
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Rds On (Max) @ Id, Vgs :
320m Ω @ 16A, 10V
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Enhancement
Turn-Off Delay Time :
54 ns
Width :
5.13mm
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
32A
Mounting Type :
Through Hole
Number of Pins :
3
Element Configuration :
Single
Package Type :
TO-264
Maximum Operating Temperature :
+150 °C
Drain-source On Resistance-Max :
0.32 Ω
Published :
2012
Vgs (Max) :
±30V
Datasheets
IXFK32N100Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100Q3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, IXFK32N100Q3 pinout, IXFK32N100Q3 datasheet PDF, IXFK32N100Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N100Q3


N-Channel Tube 320m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA

IXFK32N100Q3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9940pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 32 A.When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK32N100Q3 Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)


IXFK32N100Q3 Applications


There are a lot of IXYS
IXFK32N100Q3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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