IXFK32N100Q3

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Mfr.Part #
IXFK32N100Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 32A TO264AA
Stock
7,551
In Stock :
7,551

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
Pin Count :
3
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Configuration :
Single
Turn-Off Delay Time :
54 ns
Length :
19.96mm
Maximum Operating Temperature :
+150 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXFK32
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
1250W (Tc)
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
32A
DS Breakdown Voltage-Min :
1000 V
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
32 A
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
-55 °C
Lead Free :
Lead Free
Product Status :
Active
Vgs (Max) :
±30V
Surface Mount :
No
Drain to Source Breakdown Voltage :
1kV
Packaging :
Tube
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
320m Ω @ 16A, 10V
Drain-source On Resistance-Max :
0.32 Ω
Supplier Device Package :
TO-264AA (IXFK)
Published :
2012
Power Dissipation :
1.25kW
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Factory Lead Time :
20 Weeks
Width :
5.13mm
Pulsed Drain Current-Max (IDM) :
96A
Power Dissipation-Max (Abs) :
1250 W
Operating Temperature :
-55°C~150°C TJ
Tradename :
HiPerFET
Package Type :
TO-264
Drain to Source Voltage (Vdss) :
1000V
Element Configuration :
Single
Package Shape :
RECTANGULAR
Power Dissipation-Max :
1250W Tc
Qualification Status :
Not Qualified
Number of Elements per Chip :
1
Rise Time :
250ns
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Channel Type :
N
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Package / Case :
TO-264-3, TO-264AA
Turn On Delay Time :
45 ns
Height :
26.16mm
Package :
Tube
Number of Pins :
3
JEDEC-95 Code :
TO-264AA
Number of Elements :
1
Product Type :
MOSFET
Number of Terminations :
3
Terminal Position :
Single
Transistor Element Material :
SILICON
Series :
HiPerFET™
Vgs(th) (Max) @ Id :
6.5V @ 8mA
Current - Continuous Drain (Id) @ 25°C :
32A Tc
FET Type :
N-Channel
Product Category :
MOSFET
Number of Terminals :
3
Input Capacitance (Ciss) (Max) @ Vds :
9940pF @ 25V
Manufacturer :
IXYS
Mounting Type :
Through Hole
FET Feature :
--
Datasheets
IXFK32N100Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXFK32N100Q3 pinout, IXFK32N100Q3 datasheet PDF, IXFK32N100Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK32N100Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK32N100Q3


N-Channel Tube 320m Ω @ 16A, 10V ±30V 9940pF @ 25V 195nC @ 10V 1000V TO-264-3, TO-264AA

IXFK32N100Q3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9940pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 32 A.When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK32N100Q3 Features


a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 96A.
a 1000V drain to source voltage (Vdss)


IXFK32N100Q3 Applications


There are a lot of IXYS
IXFK32N100Q3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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